DSEI 12-12A Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100C; rectangular, d = 0.5 tp < 10 s; rep. rating, pulse width limited by TVJM IFSM TVJ = 45C; 25 11 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 75 80 A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 65 70 A TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28 27 A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 21 20 A2s -40...+150 150 -40...+150 C C C 78 W 0.4...0.6 Nm 2 g TVJ TVJM Tstg Ptot TC = 25C Md mounting torque Weight typical Symbol Conditions Features * International standard package JEDEC TO-220 AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Characteristic Values typ. Advantages max. IR VR = VRRM VR = 0.8*VRRM VR = 0.8*VRRM TVJ = 25C TVJ = 25C TVJ = 125C 250 150 4 A A mA VF IF = 12 A TVJ = 150C TVJ = 25C 2.2 2.6 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.65 46.2 V mW 1.6 60 K/W K/W K/W RthJC RthCH RthJA 0.5 trr IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C 50 70 ns IRM VR = 540 V; IF = 12 A; -diF/dt = 100 A/s L < 0.05 H; TVJ = 100C 6.5 7.2 A IFAVM rating includes reverse blocking losses at TVJM. VR = 0.8*VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling 20071004 I2t Maximum Ratings -3 DSEI 12-12A 3.0 2.5 20 Qr [C] IF [A] 10 TVJ = 100C VR = 540 V 25 max IF = 11 A 22 A 11 A 5.5 A 1.5 15 1.0 10 0.5 5 max IF = 11 A 22 A 11 A 5.5 A 20 2.0 TVJ = 150C 100C 25C 30 TVJ = 100C VR = 540 V IRM [A] 30 typ. typ. 0 1 2 VF [V] 0.0 3 Fig. 1 Forward current versus voltage drop 1 10 100 -diF/dt [A/s] 1.0 1.2 trr [ns] 0.8 IRM IF = 11 A 22 A 11 A 5.5 A max 0.4 1200 50 1000 40 800 TVJ = 125C IF = 11 A 30 0.2 0 40 80 120 TVJ [C] 160 Fig. 4 Dynamic parameters versus junction temperature 0.0 100 200 300 -diF /dt [A/s] 400 Fig. 5 Recovery time versus -diF /dt 0 600 tfr 10 0 400 60 0 400 200 VFR typ. 0.2 300 20 Qr 0.4 0.6 200 tfr [s] Kf 1.0 100 Fig. 3 Peak reverse current versus -diF /dt TVJ = 100C VR = 540 V 0.8 0 -diF/dt [A/s] Fig. 2 Recovery charge versus -diF /dt 1.4 0.6 0 1000 VFR [V] 0 100 200 300 diF /dt [A/s] 0 400 Fig. 6 Peak forward voltage versus diF /dt 2.0 ZthJC [k/W] 1.6 1.2 0.8 0.4 0.0 0.001 DSEI 12-10A 0.01 0.1 t [s] 1 10 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 20071004 Fig. 7 Transient thermal resistance junction to case -3 DSEI 12-12A IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 20071004 Dimensions TO-220 AC -3