TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain - Source Voltage VDS 200 Vdc Gate - Source Voltage Continuous Drain Current VGS 20 Vdc ID1 9 Adc ID2 6 Adc Ptl 75 (1) W Rds(on) 0.4 (2) Top, Tstg -55 to +150 C TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation TC = +25C Drain to Source On State Resistance Operating & Storage Temperature TO-204AA (TO-3) 2N6758 Note: (1) Derated Linearly by 0.6 W/C for TC > +25C (2) VGS = 10Vdc, ID = 6A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Max. Unit OFF CHARACTERTICS Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 200V, Tj = +125C VGS = 0V, VDS = 160V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 6A pulsed VGS = 10V, ID = 9A pulsed VGS = 10V, ID = 6A pulsed, Tj = +125C Diode Forward Voltage VGS = 0V, ID = 9A pulsed T4-LDS-0112 Rev. 3 (100858) Vdc 4.0 Vdc 5.0 IGSS1 IGSS2 100 200 nAdc IDSS1 IDSS2 IDSS3 25 1.0 0.25 Adc mAdc mAdc rDS(on)1 rDS(on)2 rDS(on)3 0.4 0.49 0.8 VSD 1.6 Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 9A VDS = 160V Min. Qg(on) Qgs Qgd Max. Unit 39 5.7 20 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time T4-LDS-0112 Rev. 3 (100858) Symbol ID = 9A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 100Vdc di/dt 100A/s, VDD 30V, IF = 9A Min. td(on) tr td(off) tf 35 80 60 45 trr 500 ns ns Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com PACKAGE DIMENSIONS NOTES: 1 2 3 4 5 6 7 Dimensions are in inches. Millimeters are given for general information only. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. Mounting holes shall be deburred on the seating plane side. Drain is electrically connected to the case. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 s1 Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.14 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3, 5 3, 5 * FIGURE 1: Physical dimensions of transistor (TO-204AA). T4-LDS-0112 Rev. 3 (100858) Page 3 of 3