TEPT5600 Vishay Semiconductors Ambient Light Sensor FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * High photo sensitivity * Adapted to human eye responsivity * Angle of half sensitivity: = 20 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 8390 APPLICATIONS DESCRIPTION * Replacement of cadmium sulfide (CdS) photoresistors TEPT5600 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-13/4 package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. * Ambient light sensor PRODUCT SUMMARY IPCE ( A) (deg) 0.5 (nm) 350 20 440 to 800 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk. Label with IPCE group on each bulk. Specifications of group A/B/C/D see table "Type Dedicated Characteristics" on page 2 T-13/4 COMPONENT TEPT5600 Note Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TEPT5600 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector emitter voltage TEST CONDITION VCEO 6 V Emitter collector voltage VECO 1.5 V IC 20 mA PV 100 mW Tj 100 C Collector current Tamb 55 C Power dissipation Junction temperature Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C t 3 s, 2 mm distance to package Tsd 260 C J-STD-051, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified Document Number: 84768 Rev. 1.7, 18-Jun-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 TEPT5600 Ambient Light Sensor Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 230 K/W 40 20 0 0 21333 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 6 TYP. MAX. UNIT VCE = 5 V, E = 0 ICEO 3 50 nA 16 V VCE = 0 V, f = 1 MHz, E = 0 CCEO Ev = 20 lx, CIE illuminant A, VCE = 5 V IPCE Ev = 100 lx, CIE illuminant A, VCE = 5 V IPCE 350 A Angle of half sensitivity 20 deg Wavelength of peak sensitivity p 570 nm 0.5 440 to 800 nm Photo current Range of spectral bandwidth 25 pF 226.8 A Note Tamb = 25 C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER Photo current TEST CONDITION EV = 20 lx, CIE illuminant A, VCE = 5 V, Tamb = 25 C BINNED GROUP SYMBOL MIN. MAX. A IPCE 25 50.4 UNIT A B IPCE 41.7 84 A C IPCE 69.4 140 A D IPCE 113.4 226.8 A Note Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly. www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 84768 Rev. 1.7, 18-Jun-10 TEPT5600 Ambient Light Sensor Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 000 VCE = 5 V 10 -7 IPCE - Photo Current (A) ICEO - Collector Dark Current (A) 10 -6 10 -8 10 -9 10 -10 10 -11 1000 100 10 -12 10 -13 - 40 19758 10 - 20 0 20 40 60 80 Tamb - Ambient Temperature (C) 100 10 20204 CCE0 - Collector Emitter Capacitance (pF) IPCE rel - Relative Photo Current 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE = 5 V, white LED 0 - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (C) 19759 20 15 10 5 0 0.1 19762 1.0 10.0 VCE - Collector Emitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage S()rel - Relative Spectral Sensitivity IPCE - Photo Current (A) f = 1 MHz 1.0 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 200 lx 100 lx 50 lx 20 lx 0 20205 25 100 Fig. 2 - Relative Photo Current vs. Ambient Temperature 1000 Fig. 4 - Photo Current vs. Illuminance Fig. 1 - Collector Dark Current vs. Ambient Temperature 2.2 100 EV - Illuminance (lx) 1 2 3 4 5 VCE - Collector Emitter Voltage (V) Fig. 3 - Photo Current vs. Collector Emitter Voltage Document Number: 84768 Rev. 1.7, 18-Jun-10 20019 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 400 500 600 700 800 900 1000 1100 - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 TEPT5600 Ambient Light Sensor Vishay Semiconductors 0 10 20 - Angular Displacement Srel - Relative Sensitivity 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 94 8624 Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 0.15 PACKAGE DIMENSIONS in millimeters C 0.15 Chip position R 2.45 (sphere) 0.15 7.6 0.3 8.6 + 0.2 - 0.1 0.25 1 0.8 + 0.2 - 0.1 + 0.2 - 0.1 Area not plane 0.5 + 0.15 1.5 0.63 < 0.7 34.8 0.5 11.8 0.3 (4.3) O5 E 2.54 nom. Drawing-No.: 6.544-5185.03-4 technical drawings according to DIN specifications Issue:1; 19.06.06 21981 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 84768 Rev. 1.7, 18-Jun-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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