Document Number: 84768 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.7, 18-Jun-10 1
Ambient Light Sensor
TEPT5600
Vishay Semiconductors
DESCRIPTION
TEPT5600 ambient light sensor is a silicon NPN epitaxial
planar phototransistor in a T-1¾ package. It is sensitive to
visible light much like the human eye and has peak
sensitivity at 570 nm.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Replacement of cadmium sulfide (CdS) photoresistors
• Ambient light sensor
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8390
PRODUCT SUMMARY
COMPONENT IPCE ( A) ϕ (deg) λ0.5 (nm)
TEPT5600 350 ± 20 440 to 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEPT5600 Bulk
MOQ: 4000 pcs, 4000 pcs/bulk.
Label with IPCE group on each
bulk. Specifications of group
A/B/C/D see table “Type
Dedicated Characteristics”
on page 2
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 6V
Emitter collector voltage VECO 1.5 V
Collector current IC20 mA
Power dissipation Tamb ≤ 55 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s, 2 mm distance to package Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 84768
2Rev. 1.7, 18-Jun-10
TEPT5600
Vishay Semiconductors Ambient Light Sensor
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
Note
Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
0
20
40
60
80
100
120
0 1020304050607080 90 100
21333
RthJA = 230 K/W
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 0.1 mA VCEO 6V
Collector dark current VCE = 5 V, E = 0 ICEO 350nA
Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 16 pF
Photo current
Ev = 20 lx, CIE illuminant A,
VCE = 5 V IPCE 25 226.8 μA
Ev = 100 lx, CIE illuminant A,
VCE = 5 V IPCE 350 μA
Angle of half sensitivity ϕ± 20 deg
Wavelength of peak sensitivity λp570 nm
Range of spectral bandwidth λ0.5 440 to 800 nm
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION BINNED GROUP SYMBOL MIN. MAX. UNIT
Photo current
EV = 20 lx,
CIE illuminant A,
VCE = 5 V, Tamb = 25 °C
AI
PCE 25 50.4 μA
BI
PCE 41.7 84 μA
CI
PCE 69.4 140 μA
DI
PCE 113.4 226.8 μA
Document Number: 84768 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.7, 18-Jun-10 3
TEPT5600
Ambient Light Sensor Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Photo Current vs. Ambient Temperature
Fig. 3 - Photo Current vs. Collector Emitter Voltage
Fig. 4 - Photo Current vs. Illuminance
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
19758
100
806040200- 20- 40
T - Ambient Temperature (°C)
amb
I - Collector Dark Current (A)
CEO
10
10-6
-7
10-8
10-9
10-10
10-11
10-12
10-13
VCE = 5 V
19759
100806040200- 20- 40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
IPCE rel - Relative Photo Current
Tamb - Ambient Temperature (°C)
VCE = 5 V, white LED
20205
0
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
IPCE - Photo Current (µA)
VCE - Collector Emitter Voltage (V)
200 lx
100 lx
50 lx
20 lx
12543
20204 EV - Illuminance (lx)
IPCE - Photo Current (µA)
1000
10010
10 000
1000
100
10
19762
f = 1 MHz
C
CE0
- Collector Emitter Capacitance (pF)
V
CE
- Collector Emitter Voltage (V)
25
20
15
10
5
0
0.1 1.0 10.0
20019
0.0
0.1
0.2
0.3
0.4
0.5
300 400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.6
0.7
0.8
0.9
1.0
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 84768
4Rev. 1.7, 18-Jun-10
TEPT5600
Vishay Semiconductors Ambient Light Sensor
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
0.4 0.2 0
S - Relative Sensitivity
rel
94 8624
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Issue:1; 19.06.06
Drawing-No.: 6.544-5185.03-4 specifications
according to DIN
technical drawings
Area not plane
Chip position
0.5 + 0.15
R 2.45 (sphere)
5.75 ± 0.15
7.6 ± 0.15
8.6 ± 0.3
11.8± 0.3
34.8± 0.5
1.5 ± 0.25
Ø 5 ± 0.15
(4.3)
< 0.7
0.8+ 0.2
- 0.1
1+ 0.2
- 0.1
0.63 + 0.2
- 0.1
2.54 nom.
CE
21981
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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