BCW60A - Infineon Technologies - Datasheet.Directory

BCW60, BCX70

1 Jul-10-2001

NPN Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types: BCW61, BCX71 (PNP)

1

2

3

VPS05161

Type Marking Pin Configuration Package

BCW60A

BCW60B

BCW60C

BCW60D

BCW60FF

BCW60FN

BCX70G

BCX70H

BCX70J

BCX70K

AAs

ABs

ACs

ADs

AFs

ANs

AGs

AHs

AJs

AKs

1 = B

2 = E

3 = C

SOT23

BCW60, BCX70

2 Jul-10-2001

Maximum Ratings

Parameter Symbol BCW60 BCW60FF BCX70 Unit

Collector-emitter voltage VCEO 32 32 45 V

Collector-base voltage VCBO 32 32 45

Emitter-base voltage VEBO 5 5 5

DC collector current IC100 mA

Peak collector current ICM 200

Peak base current IBM 200

Total power dissipation, TS = 71 °C Ptot 330 mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction - soldering point1) RthJS



240 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BCW60/60FF

BCX70

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IB = 0

BCW60/60FF

BCX70

V(BR)CBO

32

45

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0 V(BR)EBO 5 - -

1For calculation of RthJA please refer to Application Note Thermal Resistance

BCW60, BCX70

3 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Collector cutoff current

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

BCW60 /60FF

BCX70

ICBO

-

20

nA

Collector cutoff current

VCB = 32 V, IE = 0 , TA = 150 °C

VCB = 45 V, IE = 0 , TA = 150 °C

BCW60 / 60FF

BCX70

ICBO

-

20

µA

Emitter cutoff current

VEB = 4 V, IC = 0 IEBO - - 20 nA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

20

40

100

140

200

300

460

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

120

180

250

380

170

250

350

500

220

310

460

630

DC current gain 1)

IC = 50 mA, VCE = 1 V

hFE-grp. A/ G

hFE-grp. B/ H

hFE-grp. C/ J/ FF

hFE-grp. D/ K/ FN

hFE

50

70

90

100

-

1) Pulse test: t ≤=300µs, D = 2%

BCW60, BCX70

4 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

max.typ.min.

DC Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

0.12

0.2

V

0.25

0.55

-

VCEsat

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

0.7

0.83

0.85

1.05

-

0.75

-

VBE(ON)

-

0.55

-

0.52

0.65

0.78

Base-emitter voltage 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

AC Characteristics -250 -

fT

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz MHz

- 3

Ccb

Collector-base capacitance

VCB = 10 V, f = 1 MHz - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz -

Ceb -8

hFE-grp.

A / G

B / H

C / J / FF

D / K / FN

h11e

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

-

2.7

3.6

4.5

7.5

-

k



Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz | hFE-grp.

A / G

B / H

C / J/FF

D / K / FN

h12e

-

1.5

2

3

-

10-4

1) Pulse test: t ≤=300µs, D = 2%

BCW60, BCX70

5 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz | hFE-grp.

A / G

B / H

C / J/ FF

D / K / FN

h21e

-

200

260

330

520

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-grp.

A / G

B / H

C / J / FF

D / K / FN

h22e

-

18

24

30

50

-



S

Noise figure

IC = 100 µA, VCE = 5 V, RS = 1 k



,

f = 1 kHz,



f = 200 Hz

hFE-grp.

A - K

FF - FN

F

-

2

1

-

2

dB

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 k



,

f = 10 ... 50 Hz

hFE-grp.

FF / FN

Vn- - 135 µV

BCW60, BCX70

6 Jul-10-2001

Collector-base capacitance CCB = f (VCBO

)

Emitter-base capacitance CEB = f (VEBO)

10

EHP00327BCW 60/BCX 70

-1 1

10V10

0

6

12

pF

0

2

4

8

10

CBO

VV

EBO

C

CBO

EBO

C

CBO

)

)(

(

Total power dissipation Ptot = f(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

Permissible pulse load

Ptotmax / PtotDC = f (tp)

10

EHP00328BCW 60/BCX 70

-6

0

10

5

D

=

5

101

5

102

3

10

10-5 10-4 10-3 10-2 100

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

tp

=

DT

tp

T

totmax

tot

PDC

P

p

t

Transition frequency fT = f (IC)

VCE = 5V

10

EHP00330BCW 60/BCX 70

-1 2

10mA

1

10

3

10

5

10

0

10

1

10

2

C

T

fMHz

Ι

BCW60, BCX70

7 Jul-10-2001

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 40

0

10

EHP00331BCW 60/BCX 70

BE sat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

˚C

25

100

˚C

-50

˚C

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 40

0

10

EHP00332BCW 60/BCX 70

CEsat

V

V 0.5

-1

10

0

10

1

2

10

5

Ι

C

mA

0.1 0.2 0.3 0.4

˚C

100

25

˚C

-50

˚C

Collector current IC = f (VBE)

VCE = 5V

0

10

EHP00333BCW 60/BCX 70

BE

V

0.5 V 1.0

-2

10

-1

10

0

2

10

5

Ι

C

mA

5

1

10

˚C

100 25 -50

˚C˚C

DC current gain hFE = f (IC)

VCE = 5V

10

EHP00334BCW 60/BCX 70

-2 2

10mA

0

10

3

10

5

10

-1

10

0

10

1

C

FE

h

Ι

1

10

2

10

˚C

100

5

25

˚C

-50

˚C

BCW60, BCX70

8 Jul-10-2001

Collector cutoff current ICBO = f (TA)

VCB = VCEmax

0

10

EHP00335BCW 60/BCX 70

A

T

150

-1

4

10

Ι

CBO

nA

50 100

0

10

1

10

3

10

˚C

typ

max

102

h parameter he = f (IC) normalized

VCE = 5V

10

EHP00336BCW 60/BCX 70

-1 1

10mA

-1

10

2

10

5

10

0

10

0

C

e

h

Ι

1

10

5

CE

V

= 5 V

11e

h

12e

h

21e

h

22e

5

h parameter he = f (VCE) normalized

IC = 2mA

0

EHP00337BCW 60/BCX 70

CE

V

30

10 20

0.5

1.0

1.5

2.0

h

e

V

Ι

C

= 2 mA

h

11e

21e

h

12e

h

22e

h

Noise figure F = f (VCE)

IC = 0.2mA, RS = 2k



, f = 1kHz

10

EHP00338BCW 60/BCX 70

-1 2

10V

5

10

0

10

1

F

10

15

20

dB

0

CE

V

BCW60, BCX70

9 Jul-10-2001

Noise figure F = f (IC)

VCE = 5V, f = 120Hz

10

EHP00340BCW 60/BCX 70

-3 1

10mA

5

10

-2

10

-1

F

0

10

15

20

dB

0

Ι

C

S

R

= 1 M

ΩΩ

100 k

Ω

10 k

Ω

1 k

Ω

500

Noise figure F = f (f)

IC = 0.2mA, VCE = 5V, RS = 2k



10

EHP00339BCW 60/BCX 70

-2 2

10kHz

5

10

-1

10

0

F

1

10

15

20

dB

f

0

Noise figure F = f (IC)

VCE = 5V, f = 1kHz

10

EHP00341BCW 60/BCX 70

-3 1

10mA

5

10

-2

10

-1

F

0

10

15

20

dB

0

Ι

C

Ω

= 1 M

S

R

100 k

Ω

10 k

Ω

1 k

Ω

500

Ω

Noise figure F = f (IC)

VCE = 5V, f = 10kHz

10

EHP00342BCW 60/BCX 70

-3 1

10mA

5

10

-2

10

-1

F

0

10

15

20

dB

0

Ι

C

= 1 M

R

S

100 k

10 k

500

1 k

Ω