2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base Voltage (I E = 0) Parameter - 200 V V CEO Collector-emitter Voltage (I B = 0) - 200 V V EBO Emitter-base Voltage (I C = 0) -4 V I CM Collector Peak Current -1 A Pt o t Total Power Dissipation at T amb 25 C at T cas e 25 C 1 10 W W - 55 to 200 C T st g, T j October 1988 Storage and Junction Temperature 1/4 2N5415S THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max C/W C/W 17.5 175 ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit I CBO Collector Cutoff Current (I E = 0) V CB = - 175 V - 50 A I CEO Collector Cutoff Current (I B = 0) V CE = - 150 V - 50 A I E BO Emitter Cutoff Current (I C = 0) V EB = - 4 V - 20 A V( BR) CEO * V CE( sat )* Collector-emitter Breakdown Voltage (I B = 0) Collector-emitter Saturation Voltage I C = - 2 mA - 200 I C = - 50 mA I B = - 5 mA VB E * Base-Emitter Voltage I C = - 50 mA V CE = - 10 V h F E* DC Current Gain I C = - 50 A V CE = - 10 V Transition Frequency I C = - 10 mA f = 5 MHz V CE = - 10 V IE = 0 f = 1 MHz V CB = - 10 V fT C CBO Collector-base Capacitance * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 Test Conditions 30 V - 2.5 V - 1.5 V 150 15 MHz 15 pF 2N5415S TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 3/4 2N5415S Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4