2N5415S
October 1988
HIGH-VOLTAGE AMPLIFIER
The 2N5415S is a silicon planar epitaxial PNP tran-
sistorin Jedec TO-39 metal case, intended for high
vol-tage switching and linear amplifier applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE= 0) – 200 V
VCEO Collector-emitter Voltage (IB= 0) – 200 V
VEBO Emitter-base Voltage (IC=0) –4 V
ICM Collector Peak Current – 1 A
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C1
10 W
W
Tstg,T
jStorage and Junction Temperature – 55 to 200 °C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/4
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE=0) VCB = – 175 V – 50 µA
ICEO Collector Cutoff Current
(IB=0) VCE = – 150 V – 50 µA
IEBO Emitter Cutoff Current
(IC=0) VEB =–4V –20 µA
V(BR)CEO* Collector-emitter
Breakdown Voltage
(IB=0) IC=–2mA –200 V
VCE(sat)* Collector-emitter
Saturation Voltage IC= – 50 mA IB= – 5 mA – 2.5 V
VBE* Base-Emitter Voltage IC= – 50 mA VCE = – 10 V – 1.5 V
hFE* DC Current Gain IC=–50A VCE = – 10 V 30 150
fTTransition Frequency IC=–10mA
f=5MHz V
CE =–10V 15 MHz
CCBO Collector-base
Capacitance IE=0
f=1MHz V
CB =–10V 15 pF
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 17.5
175 °C/W
°C/W
2N5415S
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
o
(typ.)
L
G
I
DA
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N5415S
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information norfor any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponentsin life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany- Hong Kong - Italy - Japan - Korea - Malaysia -Malta - Morocco - The Netherlands -
Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A
2N5415S
4/4
