DPG60I400HA
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED²
13
Part number
DPG60I400HA
Backside: cathode
FAV
rr
tns45
RRM
60
400
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60I400HA
n
s
4
A
T
VJ
=°C
reverse recovery time
A
9.5
45
85
n
s
I
RM
max. reverse recovery current
I
F
=A;60
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V270
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.47
R0.55 K/
W
R
min.
60
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.3V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
125
P
tot
275
W
T = 25°C
C
RK/
W
60
400
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.80
T = 25°C
VJ
150
V
F0
V
0.81T = °C
VJ
175
r
F
6.1 m
Ω
V
1.22T = °C
VJ
I = A
F
V
60
1.59
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
400
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
61
j
unction capacitance V = V200 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
450
A
400
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
400
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60I400HA
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
D
P
G
60
I
400
HA
Part number
Diode
HiPerFRED
extreme fast
Single Diode
TO-247AD (2)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
150-55
TO-247
Similar Part Package Voltage class
DPG60IM400QB TO-3P (3) 400
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DPG60I400HA 506242Tube 30DPG60I400HAStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 3.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60I400HA
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
2x
b
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
13
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60I400HA
0.0 0.4 0.8 1.2 1.6 2.0
20
40
60
80
100
120
0 200 400 600
60
70
80
90
100
110
10
0
10
1
10
2
10
3
10
4
0.1
1.0
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C] -di
F
/dt [A/μs]
t[ms]
0 200 400 600
200
300
400
500
600
700
800
900
1000
1100
1200
2
3
4
5
6
7
8
9
10
11
12
0 200 400 600
4
6
8
10
12
14
16
18
20
22
0200400600
0.2
0.4
0.6
0.8
1.0
Q
rr
[μC]
V
F
[V] -di
F
/dt [A/μs]
Z
thJC
[K/W]
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage
V
FR
&timet
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/μs]
I
RM
[A]
trr
[ns]
-diF/dt [A/μs]
t
fr
[ns]
V
FR
[V]
0 200 400 600
0
10
20
30
40
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
= 120 A
60 A
30 A
T
VJ
=125°C
V
R
= 270 V
T
VJ
=125°C
V
R
= 270 V
T
VJ
= 125°C
V
R
= 270 V
T
VJ
=125°C
V
R
= 270 V
I
F
= 60 A
T
VJ
= 125°C
V
R
= 270 V
120 A
60 A
30 A
120 A
60 A
30 A
120 A
60 A
30 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved