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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2004
The mark shows ma
j
or revised
p
oints.
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3919 TO-251 (MP-3)
2SK3919-ZK TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
R
DS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2050 pF TYP.
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±64 A
Drain Current (pulse) Note1 ID(pulse) ±256 A
Total Power Dissipation (TC = 25°C) PT1 36 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 27 A
Single Avalanche Energy Note2 EAS 73 mJ
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-251)
(TO-252)
Data Sheet D17078EJ4V0DS
2
2SK3919
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V
Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 16 A 9.7 19 S
RDS(on)1 VGS = 10 V, ID = 32 A 4.5 5.6 mΩ
Drain to Source On-state Resistance Note
RDS(on)2 VGS = 5.0 V, ID = 16 A 6.8 13.7 mΩ
Input Capacitance Ciss 2050 pF
Output Capacitance Coss 460 pF
Reverse Transfer Capacitance Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz 330 pF
Turn-on Delay Time td(on) 16 ns
Rise Time tr 19 ns
Turn-off Delay Time td(off) 53 ns
Fall Time tf
VDD = 12.5 V, ID = 32 A
VGS = 10 V
RG = 10 Ω
22 ns
Total Gate Charge QG 42 nC
Gate to Source Charge QGS 8 nC
Gate to Drain Charge QGD
VDD = 20 V
VGS = 10 V
ID = 64 A 15 nC
Body Diode Forward Voltage Note VF(S-D) IF = 64 A, VGS = 0 V 0.97 V
Reverse Recovery Time trr IF = 64 A, VGS = 0 V 23 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s 11 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 µs
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
Data Sheet D17078EJ4V0DS 3
2SK3919
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
PW = 100 µs
1 ms
10 ms
Power Dissipation Limited
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
I
D(DC)
T
C
= 25°C
Single pulse
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 125°C/W
R
th(ch-C)
= 3.47°C/W
Single pulse
PW - Pulse Width - s
100
µ
1 m 10 m 100 m 1 10 100 1000
Data Sheet D17078EJ4V0DS
4
2SK3919
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
50
100
150
200
250
300
00.511.522.5
VGS = 10 V
Pulsed
5.0 V
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0.01
0.1
1
10
100
1000
0123456
V
DS
= 10 V
Pulsed
T
ch
= −55°C
25°C
75°C
125°C
150°C
V
GS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VGS(off) - Gate Cut-off Voltage - V
0
1
2
3
4
-100 -50 0 50 100 150 200
V
DS
= 10 V
I
D
= 1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
0.1
1
10
100
0.1 1 10 100
V
DS
= 10 V
Pulsed
T
ch
= −55°C
25°C
75°C
125°C
150°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
Ω
0
5
10
15
1 10 100 1000
10 V
Pulsed
V
GS
= 5.0 V
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
0 5 10 15 20
I
D
= 32 A
Pulsed
VGS - Gate to Source Voltage - V
Data Sheet D17078EJ4V0DS 5
2SK3919
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
Ω
0
2
4
6
8
10
-100 -50 0 50 100 150 200
I
D
= 32 A
Pulsed
V
GS
= 10 V
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
100
1000
10000
0.01 0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 12.5 V
V
GS
= 10 V
R
G
= 10 Ω
I
D - Drain Current - A
VDS - Drain to Source Voltage - V
0
5
10
15
20
25
30
02040
0
2
4
6
8
10
12
V
DS
V
DD
= 20 V
12.5 V
5 V
I
D
= 64 A, 42 A (at V
DD
= 5 V)
V
GS
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF - Diode Forward Current - A
0.01
0.1
1
10
100
1000
00.511.5
V
GS
= 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
1000
1 10 100
di/dt = 100 A/µs
V
GS
= 0 V
IF - Diode Forward Current - A
Data Sheet D17078EJ4V0DS
6
2SK3919
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
IAS - Single Avalanche Current - A
1
10
100
0.01 0.1 1 10
V
DD
= 12.5 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
Starting T
ch
= 25°C
I
AS
= 27 A
E
AS
= 73 mJ
L - Inductive Load - mH
Energy Derating Factor - %
0
20
40
60
80
100
120
25 50 75 100 125 150
V
DD
= 12.5 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 27 A
Starting Tch - Starting Channel Temperature - °C
Data Sheet D17078EJ4V0DS 7
2SK3919
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3ZK)
6.6 ±0.2
Mold Area 2.3 ±0.1
0.5 ±0.1
0.76 ±0.1
0.5 ±0.1
No Plating
5.3 TYP.
0.7 TYP.6.1 ±0.21.8 ±0.2
9.3 TYP.
4.0 MIN.
1.02 TYP.
16.1 TYP.
4.3 MIN.
1
4
23
1.14 MAX.
2.3 TYP. 2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5±0.2 2.3±0.1
0.5±0.1
0.76±0.12 0 to 0.25
0.5±0.1
1.0
No Plating
No Plating
5.1 TYP.
1.0 TYP.6.1±0.2
0.51 MIN.
4.0 MIN.0.8
10.4 MAX. (9.8 TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SK3919
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
