DPG60C300HJ
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2 3
Part number
DPG60C300HJ
Backside: isolated
FAV
rr
tns35
RRM
30
300
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
ISOPLUS247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
n
s
3
A
T
VJ
=°C
reverse recovery time
A
8.5
35
65
n
s
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.26
R1.05 K/
W
R
min.
30
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
145
W
T = 25°C
C
RK/
W
30
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.54
T = 25°C
VJ
150
V
F0
V
0.61T = °C
VJ
175
r
F
9.6 m
Ω
V
0.96T = °C
VJ
I = A
F
V
30
1.26
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
60
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
450
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
ISOPLUS®
XXXXXXXXX
D
P
G
60
C
300
HJ
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
ISOPLUS247 (3)
=
=
=
DPG60C300QB TO-3P (3) 300
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 70 A
per terminal
150-55
terminal to terminal
DPG60C300PC
DPF60C300HB
TO-263AB (D2Pak) (2)
TO-247AD (3)
300
300
DPG80C300HB TO-247AD (3) 300
ISOPLUS247
Similar Part Package Voltage class
DPG60C300HB TO-247AD (3) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DPG60C300HJ 505494Tube 30DPG60C300HJStandard
3600
ISOL
T
stg
°C150
storage temperature -55
3000
threshold voltage V0.61
mΩ
V
0 max
R
0 max
slope resistance * 7
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0. 04 mm over plas ti c
surface level of device bottom si de
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except Lmax.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 5.45 BSC 0.215 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim. Millimeter Inches
E
123
R
DL
L1
Q
3x b
2x b2
b4
W
A
A2
c
A1
2x e
E1
D1
D2
D3
1 2 3
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60C300HJ
0.0 0.4 0.8 1.2 1.6 2.0
10
20
30
40
50
60
70
80
0 200 400 600
40
50
60
70
80
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
04080120160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Kf
T
VJ
[°C] -di
F
/dt [A/μs]
t[ms]
0 200 400 600
100
200
300
400
500
600
700
1
2
3
4
5
6
7
0 200 400 600
4
6
8
10
12
14
16
18
0 200 400 600
0.1
0.2
0.3
0.4
0.5
0.6
Q
rr
[μC]
V
F
id-]V[
F
/dt [A/μs]
Z
thJC
[K/W]
I
F
= 60 A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recov. voltage
V
FR
&timet
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/μs]
IRM
[A]
t
rr
[ns]
-di
F
/dt [A/μs]
t
fr
[ns]
V
FR
[V]
0200400600
0
2
4
6
8
10
12
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
=60A
30 A
15 A
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
T
VJ
=125°C
V
R
=200V
T
VJ
=125°C
V
R
=200V
T
VJ
= 125°C
V
R
= 200 V
T
VJ
=125°C
V
R
=200V
T
VJ
= 125°C
V
R
= 200 V
I
F
=30 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved