DPG60C300HJ HiPerFRED VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300HJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60C300HJ Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25C 1 A VR = 300 V TVJ = 150C 0.2 mA TVJ = 25C 1.26 V 1.54 V 0.96 V IF = forward voltage drop min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 C TC = 140C rectangular 1.26 V T VJ = 175 C 30 A TVJ = 175 C 0.61 V d = 0.5 for power loss calculation only 9.6 m 1.05 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 60 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.25 TC = 25C 30 A; VR = 200 V -di F /dt = 200 A/s 145 450 W A TVJ = 125C 8.5 A TVJ = 25 C 35 ns TVJ = 125C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60C300HJ Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 FC 20 mounting force with clip d Spp/App VISOL t = 1 minute Product Marking mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL 1 mA Part number D P G 60 C 300 HJ IXYS Logo N 2.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] ISOPLUS247 (3) ISOPLUS(R) XXXXXXXXX Zyyww Part No. Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DPG60C300HJ Similar Part DPG60C300HB DPG60C300QB DPG60C300PC DPF60C300HB DPG80C300HB Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (3) TO-3P (3) TO-263AB (D2Pak) (2) TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Quantity 30 Code No. 505494 Voltage class 300 300 300 300 300 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.61 R 0 max slope resistance * 7 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product DPG60C300HJ V m Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60C300HJ Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 c b4 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60C300HJ Fast Diode 18 0.6 80 70 60 50 IF Qrr 16 0.5 IF = 60 A 30 A 15 A 0.4 12 IRM 40 [A] TVJ = 150C 10 [C] 0.3 30 IF = 60 A 30 A 15 A 14 [A] 8 20 0.2 25C TVJ = 125C 10 TVJ = 125C 6 VR = 200 V VR = 200 V 0.1 0.0 0.4 0.8 1.2 1.6 4 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 80 1.4 200 400 700 VFR TVJ = 125C VR = 200 V 1.2 600 -diF /dt [A/s] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt tfr 600 7 6 70 1.0 500 tfr trr 60 Kf 0.8 IRM TVJ = 125C VR = 200 V IF = 30 A 400 [ns] [ns] 0.6 5 IF = 60 A 30 A 15 A 50 0.4 VFR 4 [V] 300 3 200 2 Qrr 0.2 40 0 40 80 120 160 100 0 VR = 200 V 8 IF = 60 A 6 30 A 15 A 0 200 400 1 600 -diF /dt [A/s] Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt 1.2 TVJ = 125C Erec 600 Fig. 5 Typ. reverse recov. time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 10 400 -diF /dt [A/s] TVJ [C] 12 200 1.0 0.8 ZthJC 0.6 [J] [K/W] 4 0.4 2 0.2 0 0.0 0 200 400 600 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a