MDA1200, MDA1201 MDA1202, MDAI204 MDAI206 [ Designers Data Sheet FULL WAVE BRIDGE RECTIFIER ASSEMBLIES ... Utilizing inidvidual hermetically sealed metal case rectifiers inter- connected and then encapsulated in plastic to provide a single rugged package. Devices are available with voltages from 50 to 600 Volts with these additional features. @ Slip On Terminals @ High Surge Capability @ Output Current Ratings for Both Case and Ambient Conditions Designers Data for Worst Case Conditions ; The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves representing boundaries on device character- istics are given to facilitate worst case" design. SINGLE-PHASE FULL-WAVE BRIDGE 12 AMPERE 50 thru 600 VOLTS MAXIMUM RATINGS (Tc = 25C unless otherwise noted.) MDA] Mi mi MDA] MDA Rating symbot [MBA | MBA] Ws [Niza] wie [ une Peak Repetitive Reverse Voltage VRRM Volts Working Peak Reverse Voltage Vrwe | 50 | 100 | 200 | 400 | 600 DC Blocking Voltage VR RMS Reverse Voltage VRiRMs)| 35 { 70 | 140 | 280 | 420 | Voits DC Output Voltage Vde Volts Resistive Load 30 62 | 124 | 250 | 380 Capacitive Load 50 | 100 | 200 | 400 | 600 Average Rectified Forwerd Current lo Amp (Single phase bridge, resistive toad, 60Hz} 8 =Ta = 55C _ 4,5 __> Te = 100C _ 12 _ Non-Repetitive Peak Surge Current lFSM _ 300 _ | Amp (Surge applied at rated load conditions) Operating and Storage Junction TyTatg | 85 to +175 c Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Therma! Resistance, Junction to Ambient Each Die Resa 28 ciw Effective Bridge | Raya(ere) | 17:15 cw Thermal Resistance, Junction! to Case Each Die Resc 10 oom Effective Bridge | Re Jc(EFF) 3.75 ciw ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) Characteristic Symbol Typ Max Unit Instenaneous Forward Voltage (Per Diode) (1) VF Volts (ig = 18.9 A) 0.94 1.05 (ig = 18.9A, Ty = 178C) = 0.9 Reverse Current ig - 0.5 mA (Rated Vp applied to ac terminals, + and - terminals open) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. MECHANICAL CHARACTERISTICS CASE: Transter-molded plastic case with epoxy fill. POLARITY: Terminal-designation embossed on case AC not marked MOUNTING POSITION: Any, highest heat transfer efficiency accomplished through the surface opposite the terminals. WEIGHT: 100 grams (approx.) T S: Readily 6 suitable for slip-on terminals. tc MILLWMETERS| INCHES Loum [Min] MAX a | 565g | 67.68 | 2.228 | 2.270 a Lett, 21 Bt ot 343) 3.78] 0.136 [01 Cet 7 6 _| 32.61 | 3383 | 1.2001 1. Aas | i268 [1 T I a | 419] 0.166161 [cm Tase2 [aag3 11.728 11. NOTES: 1. DIM L IS 6.36 (0.260) DEEP; Dim OQ IS THRU HOLE. 2. MOUNTING HOLES WITHIN 0.25 mm (0.010) DIA OF TRUE POSITION AT MAXIMUM MATERIAL CONDITION. CASE 298-02 279MDA1200, MDA1201, MDA1202, MDA1204, MDA1206 (continued) FIGURE 1 FORWARD VOLTAGE FIGURE 2 MAXIMUM SURGE CAPABILITY Ty = 250C Oh APPLIED @ RA DB MAXIMUM 70 Ty = 175C t=60 he igs, PEAK SURGE CURRENT (AMP) NUMBER OF CYCLES x oS FIGURE 3 FORWARD VOLTAGE TEMPERATURE COEFFICIENT a o ig, INSTANTANEOUS FORWARD CURRENT (AMP) s 3 Oy, COEFFICIENT (mv/C} 08 4 16 18.20 ig, INSTANTANEOUS FORWARD CURRENT (AMP) vp, INSTANTANEOUS FOAWARD VOLTAGE (VOLTS) FIGURE 4 - TYPICAL THERMAL RESPONSE a1 0.07 r(t), TRANSIENT THERMAL 2 8 RESISTANCE (NORMALIZED) 500 10k 20k t, TIME (ms) 280MDA1200, MDA1201, MDA1202, MDA1204, MDA1206 (continued) MAXIMUM CURRENT RATINGS, BRIDGE OPERATION FIGURE 5 AMBIENT TEMPERATURE DERATING FIGURE 6 CASE TEMPERATURE DERATING NEM) = x (RESISTIVE & INDUCTIVE LOADS) lav) = a (RESISTIVE & INDUCTIVE LOADS) CAPACITIVE .0 \ CAPACITIVE LOADS} 20 LOADS Tjx1 Ty J . (EMA Y) ratio refers to a single diode and tF(AV) refers to the load current. y) ratio refers toa and IF (AV) refers to the load current. le(av), AVERAGE FORWARD CURRENT (AMP) IF{Av). AVERAGE FORWARD CURRENT (AMP) 0 60 a, a a TT 40 60 80 100 2=~ST0S~S*~CS~SKS:*CsaSC*t Ta, AMBIENT TEMPERATURE (C) Te, CASE TEMPERATURE (C) TYPICAL DYNAMIC CHARACTERISTICS (EACH DIODE) FIGURE 7 RECTIFICATION WAVEFORM EFFICIENCY FIGURE 8 CAPACITANCE 60 600 400 40 Ty = 25C iF(Av) = 1.0 300 E z 3 im 200 8 CURRENT INPUT WA 3 * 20 < > E 2 = we a 100 = S ag ui 3 Ss 10 FOR RATED VOLTAGE 8.0 0 30 60) 2.0 60 7 20 30 05 5.0 20 f, FREQUENCY (kHz} Vp. REVERSE VOLTAGE (VOLTS) FIGURE 9 REVERSE RECOVERY TIME FIGURE 10 FORWARD RECOVERY TIME 20 Te ~~ o 6S tf o o xv 2 tyr, REVERSE RECOVERY TIME (us) tfr, FORWARD RECOVERY TIME (us) = o e 0.5 In/te, RATIO OF REVERSE TO FORWARD CURRENT Ip, FORWARD CURRENT (AMP) 281MDA1200, MDA1201, MDA1202, MDA1204, MDA1206 (continued) FIGURE 11 POWER DISSIPATION VY A VA AZ 7, oo Ty = 176C T T T T HFM) | {EMD g (RESISTIVE & S8( havi jwouctive Loans) = w2t+t__i__} 2 CAPACITIVE ( 5.0 wu pu L LOADS i _ < } = oy im wz { 2S = 52 = oss ad z al2 A = 2 8.0 * 40 0 T q NOTE: The I{FNQA(AV) ratio refers tog arate dice: POTIAY) . refers to the package dissipation and tF(AV) refers to the toad current. L 1 1 1 a 20 #40 60 80 10 12 14 16 18 20 lF(Ay). AVERAGE FORWARD CURRENT (AMP) NOTE 1 THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE in muttiple chip devices where there is coupling of heat between die, the junction temperature can be calculated as fotlows: (1) 4Ty1 = Ret Pp2 + Re2Ke2Pp2 + Re3Ke3Pp3 + Rea Kea Ppa Where aT 4 is the change in junction temperature of diode 1 R64 thru 4 is the thermal resistance of diodes 1 through 4. Pp 1 thru 4 is the power dissipated in diodes 1 through 4 K62 thru 4 is the therma! coupling between diode 1 and diodes 2 through 4. An effective package thermal! resistance can be defined as follows: (2) Reterr) = 4Ty1/PpT Where: Ppt is the total package power dissipation. Assuming equal thermal resistence for each die, equation (1) simplifies to (3) 4751 = RotlPp4 + Ke2 Ppz + Ke3 Ppg + Kea Poa) For the condition where Pry = Pp2 = P93 = Ppg, Pot = 4Pp1 equation (3) can be further simplified and by substituting into equation (2) results in (4) Re(EFr) = Ror (1+ Koz + Kg3 + Kyql/4 For the MDA1 200 rectifier assembly, thermal coupling between opposite diodes is 10% and between adjacentdiodes is 20% when the case temperature is used as a reference. Similarly for ambient mounting, thermal coupling between opposite diodes is 45% and between adjacent diodes is 50%. NOTE 2 SPLIT LOAD DERATING INFORMATION Bridge rectifiers are used in two basic configurations as shown in circuits A and B of Figure 12. The current derating data of Figures and 6 apply to the standard bridge circuit (A) where la = lg. For circuit B where |, 1g, derating information can be calculated as follows: (5) TRIMAX) = TUIMAX) OT 34 Where TR(MAx) is the reference temperature (either case or ambient) ST y7 can be catculated using equation (3) in Note 1. For example, to determine Tco(mAx) for the MDA1200 with the following capacitive load conditions: ta = 10 A average with a peak of 46A |g = 5.0 A average with a peak of 35 A First calculate the peak to average ratio for (a. WEN) AY) = 46/5.0 = 9.2. (Note that the peak to average ratio is on a per diode basis and each diode provides 5.0 A average). From Figure 11, for an average current of 10 A and an |(Fry)/ NAV) = 9.2 read PoT(ay) = 21 watts or 5.25 watts/diode. Thus Poi 7 Pog = 5.25 watts. Simitarly, for aload current Ig of 5.0 A, diode #2 and diode #4 each see 2.5 A average resulting in an bien) /I(ay) = 14. Thus, the package power dissipation for 5.0 A is 10 watts or 2.5 watts/diode. .: Pp2 = Pog = 2.5 watts. The maximum junction temperature occurs in diodes #1 and #3. From equation (3} for diode #1 ATy, = 10 [5.25 + 0.1 (2.5) + 0.2 (5.25) + 0.2 (2.5)]. ATj1+ 70C Thus To(max) = 175 - 65 = 108C The total package dissipation in this example is: Pot =2x 5.25 + 2x 2.5 = 15.5 watts FIGURE 12 ~ BASIC CIRCUIT USES FOR BRIDGE RECTIFIERS o CIRCUIT A 282 J CIRCUIT B