Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors (L? FET) 10 A, 120 V 150 V rosion: 0.3.Q Features: Design optimized for 5 volt gate drive Compatible with automotive drive requirements SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device The RFM10N12L and RFM10N15L and the RFP10N12L and RFP10N15L* are N-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. Because of space limitations branding (marking) on type RFP10N12L is F10N12L and on type RFP10N15L is FION15L. The RFM and RFP series were formerly RCA developmental numbers TA9530 and TA9531, respectively. Can be driven directly from Q-MOS, N-MOS, TTL Circuits File Number 1559 TERMINAL DIAGRAM wo $s 92CS-33741 N-CHANNEI ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM10N12L RFM10N15L ORAIN SOURCE (FLANGE ) N Cr 9 GATE 92CS-37801 JEDEC TO-204AA SOURCE |_t - DRAIN [rb RFP10N12L RFPION15L DRAIN {FLANGE} O TOP VIEW GATE 92c8-39528 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): RFM10N12L DRAIN-SOURCE VOLTAGE ..........ee eee nee 120 . 120 DRAIN-GATE VOLTAGE (Ros = 1 MQ). GATE-SOURCE VOLTAGE........... DRAIN CURRENT, RMS Continuous .. POWER DISSIPATION @ Te = 25C... 02. eee ee 75 Derate above Tc = 25C 0.6 OPERATING AND STORAGE TEMPERATURE ............0. cee e eee renee Ty. Tate 5-22 RFM10N15L RFP10N12L RFP1ON15L 150 120 150 150 120 150 3 Srr<<< 75 60 60 0.6 0.48 0.48 Ww. S 3 a ______ -5 to +150 __ SSS C Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc = 25C) unless otherwise specified LIMITS TEST RFM10N12L RFM1ON15L CHARACTERISTIC SYMBOL | CONDITIONS RFP10N12L RFP10N15L UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown BVoss lb = 1 mA 120 _ 150 _ Vv Voltage Ves = 0 Gate-Threshold Voltage Vesum Ves = Vos 1 2 1 2 Vv lp = 2 MA Zero-Gate Voltage Drain loss Vos = 100 V = 1 = _ Current Vos = 120 V = _ - 1 To = 125C uA Vos = 100 V _ 50 _ _ Vos = 120 V = = 50 Gate-Source Leakage Current less Ves = t10V _ 100 _ 100 nA Vos = 0 Drain-Source On Voltage Voston lDp=5A . ~ 1.5 _ 1.5 Ves = 5 V Vv lo = 10A 4 4 Ves = 5 V Static Drain-Source On fostom ID=5A 0.3 - 0.3 a Resistance Ves = 5V Forward Transconductance ~ Qs Vos = 10V 4.0 _ 40 _ mho ; lp =5A input Capacitance Cie | Vos = 25 V _ 1200 1200 Output Capacitance Coss | Ves = O0V _ 250 =~ 250 pF Reverse-Transter Capacitance Cis f = 1MHz _ 120 _ 120 Turn-On Delay Time tatom Voo = 75 V 15(typ} 60. 15(typ) 60 Rise Time tr psa 50(typ) 135 | 50(typ) 135 ns Turn-Off Delay Time tarot Ros - 6 250 90(typ) 135 90(typ) 135 Fall Time te Ves = 5 V 90(typ) 135 90(typ) 135 Thermal Resistance R&c RFM10N12L, 1.67 1.67 Junction-to-Case . RFEM10N15L , : CAN RFP10ON12L, _. 2.083 _ 2.083 RFPION15L SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS RFMTONT2L | RFMION1SL CHARACTERISTIC SYMBOL TEST CONDITIONS RFP10N12L RFPION15L | UNITS MIN. | MAX. | MIN. | MAX. Diode Forward Voltage Vsp@ Iso = 5A _ 1.4 _ 1.4 Vv Reverse Recovery Time tre Ip = 4A, die/dy = 100 A/ps 150 (typ.) 150 (typ.) ns 4 Pulse Test: Width <= 300 ys, Duty cycle << 2% 5-23, Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 8| CASE TEMPERATURE (To) =25 C | (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN 4 TEMPERATURE) 3 AREA IS LIMITED BY r DRAIN~ CURRENT (Ip)A Vpsg (MAX.) = [20V(REMIONI2L,RFPIONIZL) Vpsg (MAX.)= ISOVIRFMIONISL RFPIONISL) 2 4 6 8 2 4 6 8 2 4 6 8 | 10 100 1000 ORAIN- TO SOURCE VOLTAGE (Vpg) --V 92CM~ 38155 Fig. 1 - Maximum safe operating areas for all types. Ves" Ip*maA Veg (thd 50 100 = CASE TEMPERATURE (Tc }C . 50 50 100 150 92cs~ 38156 JUNCTION TEMPERATURE (T,)*C 92CS- 38158 Fig. 2 - Power vs. temperature derating curve for all types. Fig. 3 - Typical normalized gate threshold voltage as a function of junction temperature for ail types. Ip=5A Vgst5 Vps!0V PULSE TEST PULSE DURATION DUTY CYCLE $ 2% ON RESISTANCE Lrg ( NORMALIZED 9 a & 2 im e 4 2 So z < 4 a w = < z o JUNCTION TEMPERATURE (Ty }~ C GATE-TO-SOURCE VOLTAGE (Vgg)-V 9208-38159 92CS- 38160 fig. 4 - Normalized drain-to-source on resistance vs. junction Fig. 5 - Typical transfer characteristics for all types. temperature for all types. -24 Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L \ a> oN 150 T T T 10 . Nee. 7 5Vpss DURATION A, = 162 CYCLE < 2% . ig (REF) = 0.45 mA 48 TEMPERATURE 112.5 (To )= 25% : Ves = 5V Te )= 25C a a 462 3 GATE SOURCE 2 > VOLTAGE > | 75 i . a z a Yoo = Yoss Yoo = Voss a S w > r > & > oO 387.5 0.75 Vpss 9.75 Voss z | 0.50 Voss 0.50 Voss te 0.25 Vpss :0.25 Vpss DRAIN SOURCE VOLTAGE 0 0 9 1G (REF 80. ig (REF) Ig (ACT) Ig (act) DRAIN-TO-SOURCE VOLTAGE (Vpg)V TIME Microseconds 92$-37654 9205-38161 Fig. 6 - Normalized switching waveforms for constant gate-current. Fig. 7 - Typical saturation characteristics for all types. Refer to RCA application notes AN-7254 and AN-7260. FREQUENCY (f) = 1 MHz 2 SE TEST 2 PULSE DURATION= & % b w g Ss = 8 2 2 a w dad Q eg 2 z e os 3 we) <= o a ae @ 2 ue Oo e 2 ol = a . 12 16 20 oO 10 20 30 50 DRAIN CURRENT (Ip) -To- TAGE (Vpg) - DIMA oes saree DRAIN-TO-SOURCE VOLTAGE (Vpg) soce-seles Fig. 8 - Typical drain-to-source on resistance as a function Fig. 9 - Capacitance as a function of drain-to-source voltage for drain current for all types. all types. 2 PULSE TEST e PULSE DURATION= 80ps 159 = DUTY % 5 3 aS TTT Vp 2 | 1259 | TO SCOPE = v 8 | = "DD 2 | 75V 8 | t KELVIN a | 10 TL I CONTACT z { Ov | - ney 2 | = 1 z | e oo Le ans 77 7 = 92CS-38I57 2 3 4 5 6 9 10 DRAIN CURRENT (Ip) -A 92CS-3B8164 Fig. 10 - Typical forward transconductance as a function of drain Fig. 11 - Switching Time Test Circuit. current for ail types. 5-25