AO4496 General Description Product Summary The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 19.5m (VGS = 10V) RDS(ON) < 26m (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D Bottom View D D D G G S S S S Absolute Maximum Ratings TJ=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current A Pulsed Drain Current TA=70C Avalanche Current G Repetitive avalanche energy L=0.1mH TA=25C Power Dissipation A TA=70C G Junction and Storage Temperature Range Maximum Junction-to-Lead C Units V 20 V 10 B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 30 Maximum ID 7.5 IDM 50 IAR 17 EAR 14 Alpha & Omega Semiconductor, Ltd. mJ 3.1 PD W 2.0 TJ, TSTG Symbol t 10s Steady State Steady State A RJA RJL -55 to 150 Typ 31 59 16 Max 40 75 24 C Units C/W C/W C/W www.aosmd.com AO4496 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250A, VGS = 0V 1 TJ = 55C 5 IGSS Gate-Body leakage current VDS = 0V, VGS = 20V Gate Threshold Voltage VDS = VGS ID = 250A 1.4 ID(ON) On state drain current VGS = 10V, VDS = 5V 50 100 VGS = 10V, ID = 10A TJ=125C 30 Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 550 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=10A 3 A nA V A 29 VSD Output Capacitance 19.5 26 IS Reverse Transfer Capacitance 16 24 VDS = 5V, ID = 10A Crss 2.5 21 Forward Transconductance Coss 1.8 VGS = 4.5V, ID = 7.5A gFS Units V VDS = 30V, VGS = 0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ m S 1 V 3 A 715 pF 110 pF 55 pF 4 4.9 9.8 13 nC 4.6 6.1 nC 1.8 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 5 ns VGS=10V, VDS=15V, RL= 1.5, RGEN=3 3.2 ns 24 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A, dI/dt=500A/s 22 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/s 14 Body Diode Reverse Recovery Time 6 ns 29 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. 0 G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS= 5V 4.5V 4V 40 40 30 ID(A) ID (A) 30 3.5V 20 20 125C VGS= 3V 10 10 25C 0 0 0 1 2 3 4 5 1 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 26 Normalized On On-Resistance 1.8 24 RDS(ON) (m ) 2 VGS= 4.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID= 7.5A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/s 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 ID= 10A 45 1E+01 1E+00 35 1E-01 125C 30 IS (A) RDS(ON) (m ) 40 25 1E-02 125C 1E-03 25C 20 1E-04 25C 15 1E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4496 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 10A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 200 Coss Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 TJ(Max)=150C TA=25C 10s ID (Amps) 1 1ms RDS(ON) limited 10ms 100mss 10s 0.1 0.01 IF=-6.5A, dI/dt=100A/s 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z JA Normalized Transient Thermal Resistance 10 1 100 10 DC TJ(Max)=150C TA=25C 0.1 Power (W) 100s 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W 100 1 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING PD OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com AO4496 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com