APT50N60JCCU2
APT50N60JCCU2 – Rev 2 May, 2008
www.microsemi.com 1-3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 50
ID Continuous Drain Current Tc = 80°C 38
IDM Pulsed Drain current 130 A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 45 mΩ
PD Maximum Power Dissipation Tc = 25°C 290 W
IAR Avalanche current (repetitive and non repetitive) 15 A
EAR Repetitive Avalanche Energy 3
EAS Single Pulse Avalanche Energy 1900 mJ
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent s w i t c hi ng behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SO T-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP® Boost chopper
Super Junction
MOSFET Power Module
K
D
G
S
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 50A @ Tc = 25°C
APT50N60JCCU2
APT50N60JCCU2 – Rev 2 May, 2008
www.microsemi.com 2-3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 22.5A 40 45 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6.8
Coss Output Capacitance VGS = 0V ; VDS = 25V
f = 1MHz 0.32 nF
Qg Total gate Charge 150
Qgs Gate – Source Charge 34
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 44A 51
nC
Td(on) Turn-on Delay Time 30
Tr Rise Time 20
Td(off) Turn-off Delay Time 100
Tf Fall Time
Tj=25°C
VGS = 10V
VBus = 400V
ID = 44A
RG = 3.3Ω 20
ns
Eon Turn-on Switching Energy 405
Eoff Turn-off Switching Energy
Tj=25°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω 520 µJ
Eon Turn-on Switching Energy 660
Eoff Turn-off Switching Energy
Tj=125°C
VGS = 10V ; VBus = 400V
ID = 44A ; RG = 3.3Ω 635 µJ
VSD Diode Forward Voltage VGS = 0V, IS = - 44A 0.9 1.2 V
trr Reverse Recovery Time Tj = 25°C 600 ns
Qrr Reverse Recovery Charge
IS = - 44A
VR = 400V
diS/dt = 100A/µs Tj = 25°C 17 µC
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100 400
IRM Maximum Reverse Leakage Current VR=600V Tj = 175 °C 200 2000 µA
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 125°C 20 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 20A Tj = 175°C 2 2.4 V
QC Total Capacitive Charge IF = 20A, VR = 300V
di/dt =800A/µs 28 nC
f = 1MHz, VR = 200V 130
Q Total Capacitance f = 1MHz, VR = 400V 100 pF
APT50N60JCCU2
APT50N60JCCU2 – Rev 2 May, 2008
www.microsemi.com 3-3
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMos 0.43
RthJC Junction to Case Thermal Resistance SiC Diode 1.4
RthJA Junction to Ambient (IGBT & Diode) 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033) 12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,7 86 5,256,5 83 4,748,1 03 5,283,20 2 5,231,47 4 5,434,09 5 5,528,058 and foreign patents. U. S and Foreign patents pending. All Rights Reserved.
Source Gate
Drain
Cathode
