SOIC-8
Characteristic Value
RF input power 2 W > 500 MHz 0/-8 V
0.5 W @ 50 MHz 0/-8 V
Control voltage +0.2 V, -8 V
Operating temperature -40 °C to +85 °C
Storage temperature -65 °C to +150 °C
Absolute Maximum Ratings
V1V2J1–J2J1–J3
0 -5 Insertion loss Isolation
-5 0 Isolation Insertion loss
Truth Table
Negative Operation
Positive Operation(1)
V1V2J1–J2J1–J3
VHIGH 0 Insertion loss Isolation
0V
HIGH Isolation Insertion loss
All other conditions not recommended.
VHIGH = 5 to 8 V (VS= VHIGH ± 0.2 V).
1. Refer to Application Notes for further information.
All other conditions not recommended.
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as
possible, ESD (Electrostatic Discharge) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.