BSS 83 P SIPMOS Small-Signal-Transistor Features Product Summary * P-Channel Drain source voltage VDS * Drain-source on-state resistance RDS(on) Continuous drain current ID Enhancement mode * Avalanche rated * Logic Level -60 V 2 W -0.33 A 3 * dv/dt rated 2 * Qualified according to AEC Q101 1 * Halogen-free according to IEC61249-2-21 Type Package Tape and Reel BSS 83 P PG-SOT-23 H6327: 3000pcs/r. YAs Marking Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Pin 1 PIN 2 PIN 3 G S D Value ID Continuous drain current -0.33 T A = 70 C -0.27 I D puls Unit A T A = 25 C Pulsed drain current VPS05161 -1.32 T A = 25 C Avalanche energy, single pulse EAS 9.5 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.036 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 0.36 W -55...+150 C I D = -0.33 A , V DD = -25 V, RGS = 25 W mJ kV/s I S = -0.33 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C T A = 25 C T j , T stg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class; JESD22-A114-HBM Class 0 Rev. 1.6 Page 1 2014-07-07 BSS 83 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 150 @ min. footprint - - 350 @ 6 cm 2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W ( Pin 3 ) RthJA SMD version, device on PCB: Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -80 A VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 A A VDS = -60 V, V GS = 0 V, T j = 25 C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 C - -10 -100 IGSS - -10 -100 nA RDS(on) - 2 3 W RDS(on) - 1.4 2 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -4.5 V, I D = -0.27 A Drain-source on-state resistance VGS = -10 V, I D = -0.33 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.6 Page 2 2014-07-07 BSS 83 P Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs 0.24 0.47 - S Input capacitance Ciss - 62 78 pF Coss - 19 24 Crss - 7 9 t d(on) - 23 35 tr - 71 106 t d(off) - 56 70 tf - 61 76 VDS2*I D*RDS(on)max , ID = -0.27 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rev. 1.6 Page 3 2014-07-07 BSS 83 P Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Unit Values min. typ. max. Q gs - 0.12 0.18 Q gd - 1.1 1.65 Qg - 2.38 3.57 V(plateau) - -2.94 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -0.33 A Gate to drain charge VDD = -48 , ID = -0.33 A Gate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -0.33 A Parameter Symbol Values Unit min. typ. max. IS - - -0.33 ISM - - -1.32 VSD - -0.84 -1.1 V trr - 59.4 89 ns Qrr - 37.5 56 nC Reverse Diode Inverse diode continuous forward current A T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage VGS = 0 V, I F = -0.33 Reverse recovery time VR = -30 V, IF=I S , di F/dt = 80 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 80 A/s Rev. 1.6 Page 4 2014-07-07 BSS 83 P Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS 10 V BSS 83 P BSS 83 P 0.38 -0.36 W A 0.32 -0.28 -0.24 0.24 ID Ptot 0.28 -0.20 0.20 -0.16 0.16 0.12 -0.12 0.08 -0.08 0.04 -0.04 0.00 0 20 40 60 80 100 120 C 0.00 0 160 20 40 60 80 100 120 C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 C parameter : D = tp /T -10 1 160 BSS 83 P 10 3 A BSS 83 P K/W tp = 88.0s ID = RD -10 100 s /I D S( VD 10 2 S Z thJC -10 0 ) on 1 ms -1 10 1 D = 0.50 10 ms 0.20 0.10 -10 -2 10 0 0.05 single pulse 0.02 DC -10 -3 -1 -10 -10 0 -10 1 V 0.01 -10 2 VDS Rev. 1.6 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 2014-07-07 BSS 83 P Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s RDS(on) = f (ID ) parameter: VGS BSS 83 P A BSS 83 P 6.5 Ptot = 0W W jik hglf e d VGS [V] a -2.5 -0.60 ID c -0.50 -0.40 -0.30 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 b k -8.0 l -10.0 a b c 5.5 5.0 RDS(on) -0.80 4.5 4.0 3.5 3.0 2.5 2.0 -0.20 d e l f g j h ki 1.5 1.0 -0.10 a VGS [V] = 0.5 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.00 -5.0 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.10 -0.20 -0.30 g h i j -5.5 -6.0 -6.5 -7.0 -0.40 k l -8.0 -10.0 -0.50 A VDS -0.65 ID Typ. transfer characteristics I D= f ( V GS ) VDS 2 x I D x RDS(on)max Typ. forward transconductance gfs = f(ID); Tj=25C parameter: tp = 80 s parameter: gfs -1.2 0.70 A S 0.60 -1.0 0.55 -0.9 0.50 0.45 gfs ID -0.8 -0.7 0.40 -0.6 0.35 -0.5 0.30 0.25 -0.4 0.20 -0.3 0.15 -0.2 0.10 -0.1 0.0 0.0 0.05 -1.0 -2.0 -3.0 -4.0 V -6.0 VGS Rev. 1.6 0.00 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A -0.70 ID Page 6 2014-07-07 BSS 83 P Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -0.33 A, VGS = -10 V parameter: VGS = VDS , ID = -80 A BSS 83 P -3.0 5.5 W V V GS(th) RDS(on) 4.5 4.0 3.5 98% -2.0 typ 3.0 -1.5 98% 2.5 2.0 typ 2% -1.0 1.5 1.0 -0.5 0.5 0.0 -60 -20 20 60 100 C 0.0 -60 180 -20 20 60 100 Tj 160 C Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 s 10 3 -10 1 pF BSS 83 P A -10 0 C Ciss IF 10 2 Coss 10 1 -10 -1 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -5 -10 -15 -20 -25 V -10 -2 0.0 -35 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev. 1.6 -0.4 Page 7 2014-07-07 BSS 83 P Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.33 A pulsed para.: I D = -0.33 A , VDD = -25 V, RGS = 25 BSS 83 P 10 -16 mJ V 8 -12 VGS E AS 7 6 5 -10 -8 4 0,2 VDS max -6 0,8 VDS max 3 -4 2 -2 1 0 25 45 65 85 105 125 165 C 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS 83 P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 Tj Rev. 1.6 Page 8 2014-07-07 BSS83P Package Outline: Footprint: Rev 1.6 Packaging: page 9 2014-07-07 BSS 83 P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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