1
MRF313MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
•Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
•Emitter Ballast and Low Current Density for Improved MTBF
•Common Emitter for Improved Stability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 30 Vdc
Collector–Base Voltage VCBO 40 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC150 mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD6.1
35 Watts
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 28.5 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 30 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 35 — — Vdc
Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 35 — — Vdc
Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc
Collector Cutoff Current (VCE = 20 Vdc, IB = 0) ICEO — — 1.0 mAdc
(continued)
Order this document
by MRF313/D
SEMICONDUCTOR TECHNICAL DATA
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 305A–01, STYLE 1
Motorola, Inc. 1994
MRF313
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 60 150 —
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz) fT— 2.5 — GHz
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 3.5 5.0 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (1)
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Gpe 15 16 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) η— 45 — %
Series Equivalent Input Impedance
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zin — 6.4 – j4.8 — Ohms
Series Equivalent Output Impedance
(VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zout — 75 – j45 — Ohms
NOTE:
1. Class C
Figure 1. 400 MHz Power Gain Test Circuit
RF
INPUT
+28 V
C8
C6
C5
C4C3
C2
L1
Z2
C9
C1
L4
+
–
L2
L3
DUT
R
+
Z3
Z1
C7
RF
OUTPUT
C1, C2, C4 — 1.0–20 pF JOHANSON 9063
C3 — 1.0–10 pF JOHANSON
C5 — 150 pF Chip
C6 — 0.1 µF
C7, C8 — 680 pF Feedthru
C9 — 1.0 µF TANTALUM
L1, L3 — 5 Turns, AWG #20, 1/4″ I.D.
L2 — Ferrite Bead, FERROXCUBE
L2 — No. 56–590–65/4B
L4 — FERROXCUBE VK200–20/4B
L4 — Input/Output Connectors — Type N
Board — Glass Teflon, ε = 2.56, t = 0.062″
R — 4.7 Ohms, 1/4 W
Z1 — 2.0″ x 0.1″ MICROSTRIP LINE
Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE
3
MRF313MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 305A–01
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MK
F
4
231
D
C
H
JA
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.200 0.220 5.08 5.59
C0.095 0.130 2.41 3.30
D0.055 0.065 1.40 1.65
F0.025 0.035 0.64 0.89
H0.040 0.050 1.02 1.27
J0.003 0.007 0.08 0.18
K0.435 ––– 11.05 –––
M45 REF 45 REF
_ _
MRF313
4MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center , No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF313/D
*MRF313/D*
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