TPC8018-H
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8018-H
High-Speed and High-Efficiency DC/DC Converter
Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 12 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| =50 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Rati ngs (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 18
Drain current
Pulsed (Note 1) IDP 72
A
Drain power dissipation (t = 10 s)
(Note 2a)
PD 1.9 W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 1.0 W
Single-pulse avalanche energy
(Note 3) EAS 210 mJ
Avalanche current IAR 18 A
Repetitive avalanche energy
(Note 2a) (Note 4) EAR 0.19 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4
TPC8018-H
2006-11-16
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Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Rth (ch-a) 65.8 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W
Marking ( N ote 5)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 18 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
TPC8018
H Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
TPC8018-H
2006-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
Drain cutoff current IDSS V
DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V
VGS = 4.5 V, ID = 9 A ⎯ 4.8 6.2
Drain-source ON-resistance RDS (ON)
VGS = 10 V, ID = 9 A ⎯ 3.5 4.6
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 25 50 ⎯ S
Input capacitance Ciss ⎯ 2265 ⎯
Reverse transfer capacitance Crss ⎯ 255 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 1045 ⎯
pF
Rise time tr ⎯ 5 ⎯
Turn-on time ton ⎯ 14 ⎯
Fall time tf ⎯ 11 ⎯
Switching time
Turn-off time toff
Duty
<
=
1%, tw = 10 µs ⎯ 50 ⎯
ns
VDD
∼
−
24 V, VGS = 10 V, ID = 18 A ⎯ 38 ⎯
Total gate charge
(gate-source plus gate-drain) Qg
VDD
∼
−
24 V, VGS = 5 V, ID = 18 A ⎯ 21 ⎯
Gate-source charge 1 Qgs1 ⎯ 7.3 ⎯
Gate-drain (“Miller”) charge Qgd ⎯ 9 ⎯
Gate switch charge QSW
VDD
∼
−
24 V, VGS = 10 V, ID = 18 A
⎯ 12 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 72 A
Forward voltage (diode) VDSF I
DR = 18 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 1.67Ω
VDD
∼
−
15 V
0 V
VGS 10 V
4.7 Ω
ID = 9 A
VOUT
TPC8018-H
2006-11-16
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Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain current ID (A)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
1
0.1 1 10
10
100
VGS = 10 V
100
4.5
Common source
Ta = 25°C
Pulse test
Drain current ID (A)
⎪Yfs⎪ – ID
0.1
100
1000
0.1 1
25
100
Ta = −55°C
10
10
1
Common source
VDS = 10 V
Pulse test
Forward transfer admittance |Yfs| (S)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
0
0 1 2 3 6
20
50
Ta = −55°C
25
100
30
40
10
4 5
Common source
VDS = 10 V
Pulse test
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
40
30
20
10
0
50
0 0.8 2
VGS = 2.8V
3.4
3.6
4
6
10
4.5
5
1.6
1.2 0.4
3
3.1
3.2
3.3
3.8 3.5
Common source
Ta = 25°C Pulse test
20
12
8
0
16
4
0 0.2 0.4 0.6 0.8
VGS = 2.8V
2.9
3.1
3
6 3.5
8
10
1
3.3
3.2
4
4.5
Common source
Ta = 25°C Pulse test
0
0.12
0.16
0.2
0
ID = 18 A
2 4 6 8 10
4.5
9
0.08
0.04
Common source
Ta = 25°C
Pulse test
100
TPC8018-H
2006-11-16
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2
0
0 40 80 120
1.2
1.6
160
0.8
0.4
(1)
(2)
160 −40 0 40 80 120 −80
10
8
6
4
2
0
ID = 18A
VGS = 10 V
VGS = 4.5 V
ID = 4.5A,9A,18A
ID = 4.5A,9A
0
0.5
1
1.5
2.5
−80 −40 0 40 80 120 160
2
0
0.1 −0.2
10
100
1000
−0.6 −0.8 −1.0
VGS = 0 V
10
4.5
1
3
−0.4
1
10
0.1
100
1000
10000
1 10 100
Ciss
Coss
Crss
40
0 8 24
VDD = 6 V
VDS
VGS
24
12
32
50
20
10
30
40
0
16
20
8
4
12
16
0
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Common source
Ta = 25°C
Pulse test
Gate threshold voltage Vth (V))
Ambient temperature Ta (°C)
Vth – Ta
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
Pulse test
Total gate charge Qg (nC)
Drain-source voltage VDS (V)
Dynamic input/output
characteristics
Gate-source voltage VGS (V)
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation PD (W)
(1)Device mounted on a
glass-epoxy board(a) (Note 2a)
(2)Device mounted on a
glass-epoxy board(b) (Note 2b)
ｔ＝10s
Common source
ID = 18 A
Ta = 25°C
Pulse test
TPC8018-H
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Safe operating area
Drain current ID (A)
Drain-source voltage VDS (V)
Pulse width tw (s)
Transient thermal impedance rth (°C/W)
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
(2)
(1)
0.1
1
10
100
1000
0.1 10
1
ID max (Pulse) *
t=1ms *
VDSS max
0.1
10ms *
100
rth – tw
rth – tw
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
Single - pulse
* Single - pulse
Ta = 2 5 ℃
Curves must be derated
linearly with increase in
temperature.
TPC8018-H
2006-11-16
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