1
7MBR100VZ120-50 IGBT Modules
IGBT MODULE (V series)
1200V / 100A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=80°C 100
A
Icp 1ms Tc=80°C 200
-Ic 100
-Ic pulse 1ms 200
Collector power dissipation Pc 1 device 520 W
Brake
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current ICContinuous Tc=80°C 75 A
ICP 1ms Tc=80°C 150
Collector power dissipation PC1 device 385 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Converter
Repetitive peak reverse voltage VRRM 1600 V
Average output current IO50Hz/60Hz, sine wave 100 A
Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C
half sine wave
520 A
I2t (Non-Repetitive) I2t 1352 A2s
Junction temperature Tj Inverter, Brake 175
°C
Converter 150
Operating junciton temperature
(under switching conditions) Tjop Inverter, Brake 150
Converter 150
Case temperature Tc 125
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
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7MBR100VZ120-50
2
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 100mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 100A
Tj=25°C - 2.25 2.70
V
Tj=125°C - 2.55 -
Tj=150°C - 2.60 -
VCE (sat)
(chip)
VGE = 15V
IC = 100A
Tj=25°C - 1.75 2.20
Tj=125°C - 2.05 -
Tj=150°C - 2.10 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 9.1 - nF
Turn-on time
ton
VCC = 600V
IC = 100A
VGE = +15 / -15V
RG = 1.6Ω
- 0.39 1.20
µs
tr - 0.09 0.60
tr (i) - 0.03 -
Turn-off time toff - 0.53 1.00
tf - 0.06 0.30
Forward on voltage
VF
(terminal) IF = 100A
Tj=25°C - 2.20 2.65
V
Tj=125°C - 2.35 -
Tj=150°C - 2.30 -
VF
(chip) IF = 100A
Tj=25°C - 1.70 2.15
Tj=125°C - 1.85 -
Tj=150°C - 1.80 -
Reverse recovery time trr IF = 100A - - 0.1 µs
Brake
Zero gate voltage collector current ICES VGE = 0V
VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V
VGE = +20 / -20V - - 200 nA
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 75A
Tj=25°C - 2.25 2.70
V
Tj=125°C - 2.60 -
Tj=150°C - 2.65 -
VCE (sat)
(chip)
VGE = 15V
IC = 75A
Tj=25°C - 1.85 2.30
Tj=125°C - 2.20 -
Tj=150°C - 2.25 -
Turn-on time ton VCE = 600V
IC = 75A
VGE = +15 / -15V
RG = 2.2Ω
- 0.39 1.20
µs
tr - 0.09 0.60
Turn-off time toff - 0.53 1.00
tf - 0.06 0.30
Reverse current IRRM VR = 1200V - - 1.00 mA
Converter
Forward on voltage VFM
(chip) IF = 100A terminal - 2.00 2.35 V
chip - 1.50 -
Reverse current IRRM VR = 1600V - - 1.0 mA
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.29
°C/W
Inverter FWD - - 0.44
Brake IGBT - - 0.39
Converter Diode - - 0.43
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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3
IGBT Modules
7MBR100VZ120-50
Characteristics (Representative)
[ Inverter ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE [V]
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25oC
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Inverter ]
0
50
100
150
200
0 1 2 3 4 5
VGE=20V
15V
12V
10V
8V
0
50
100
150
200
0 1 2 3 4 5
15V
12V
10V
8V
VGE=20V
0
50
100
150
200
012345
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=200A
Ic=100A
Ic=50A
0.0
0.1
1.0
10.0
100.0
0 10 20 30
Cies
Coes
Cres
0 200 400 600 800 1000
VGE
VCE
Tj=150°C
4
7MBR100VZ120-50
4
IGBT Modules
Gate resistance : Rg [Ω]
[ Inverter ]
Reverse bias safe operating area (max.)
[ Inverter ]
+VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj <= 125°C
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.6Ω
Switching loss vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 125°C
Gate resistance : Rg [Ω]
Switching loss vs. gate resistance (typ.)
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector-Emitter voltage : VCE [V]
Vcc=600V, Ic=100A, VGE=±15V
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current: IC [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.6Ω, Tj= 150°C
Switching time vs. Collector current (typ.)
Collector current: IC [A]
0
50
100
150
200
250
0 400 800 1200
RBSOA
(Repetitive pulse)
10
100
1000
10000
0 100 200 300
toff
10
100
1000
10000
0 100 200 300
toff
10
100
1000
10000
0.1 1.0 10.0 100.0
tr
tf
toff
ton
0
10
20
30
0 100 200 300
Eon(125°C)
Eon(150°C)
Eoff(125°C)
Err(125°C)
Err(150°C)
Eoff(150°C)
0
5
10
15
20
0 1 10 100
Err(150°C)
ton
tr
tf
ton
tr
tf
Err(125°C)
Eoff(150°C)
Eon(125°C)
Eon(150°C)
Eoff(125°C)
5
5
IGBT Modules
7MBR100VZ120-50
Pulse width : Pw [sec]
[ Thermistor ]
Temperature characteristic (typ.)
Resistance : R [kΩ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Forward on voltage : VFM [V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
Temperature [°C ]
chip
Forward current : IF [A]
Forward on voltage : VF [V]
Forward current : IF [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.6Ω
Reverse recovery characteristics (typ.)
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0
50
100
150
200
012345
Tj=125°C
Tj=25°C
10
100
1000
0 100 200 300
Irr(150°C)
0
50
100
150
200
0 1 2 3 4
Tj=125°
C
Tj=25°C
0.01
0.10
1.00
0.001 0.010 0.100 1.000
FWD[Inverter]
IGBT[Inverter]
Conv. Diode
IGBT[Brake]
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Tj=150°C
Irr(125°C)
trr(150°C)
trr(125°C)
6
7MBR100VZ120-50
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IGBT Modules
Collector - Emitter voltage: VCE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Brake ]
Gate - Emitter voltage: VGE [V]
[ Brake ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current: IC [A]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25
o
C
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
[ Brake ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
0
50
100
150
0 1 2 3 4 5
V
GE
=20V
15V
12V
10V
8V
0
50
100
150
0 1 2 3 4 5
15V
12V
10V
8V
VGE=20V
0
50
100
150
012345
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=150A
Ic=75A
Ic=38A
0.1
1.0
10.0
100.0
0 10 20 30
Cies
Coes
Cres
0 200 400 600 800
VGE
VCE
Tj=150°C
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7
IGBT Modules
7MBR100VZ120-50
[ Thermistor ][ Converter ] [ Brake] [ Inverter ]
Equivalent Circuit Schematic
8
7MBR100VZ120-50 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
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