ADVANCED APT1001RSVR POWER TECHNOLOGY 1000V 11A_ 1.0000 POWER MOS vV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching * 100% Avalanche Tested D Lower Leakage * Surface Mount D*PAK Package G i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT1001RSVR UNIT Voss Drain-Source Voltage 1000 Volts Ib Continuous Drain Current @ Tg = 25C 11 @) Amps lom Pulsed Drain Current 44 Vas Gate-Source Voltage Continuous +30 Vol olts Vesm Gate-Source Voltage Transient +40 p Total Power Dissipation @ Tc, = 25C 280 Watts p Linear Derating Factor 2.24 wc TT stg | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 laR Avalanche Current (Repetitive and Non-Repetitive) 11 Amps Ear Repetitive Avalanche Energy O 30 J m Eas Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVgg | Drain-Source Breakdown Voltage (V,. = OV, |, = 250A) 1000 Volts lb(on) On State Drain Current @ (Vig > | (on) X Rosion) Max, Vas = 10V) 11 Amps Roscon) Drain-Source On-State Resistance @ (Vos = 10V, 0.5 | prcont?) 1.00 Ohms Zero Gate Voltage Drain Current (Vos = Vase? Vos = 0V) 95 Dss - = HA Zero Gate Voltage Drain Current (V). = 0.8 Vigg,s Vag = OV, T, = 125C) 250 lass Gate-Source Leakage Current (Vos = +30V, Vos = 0V) +100 nA Vesith) Gate Threshold Voltage (Vig = Vas? Ly = 1.0mA) 2 4 Volts Was CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA ( APT Website - htip:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 050-5578 Rev B 050-5578 Rev B DYNAMIC CHARACTERISTICS APT1001RSVR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Co. Input Capacitance Vg = OV 3050 | 3660 Cos, | Output Capacitance Vog = 25V 280 390 pF C., | Reverse Transfer Capacitance f= 1 MHz 135 200 Q, Total Gate Charge Vag = 10V 150 225 Qgs Gate-Source Charge Vp = 9-5 Voss 16 24 nc Qo Gate-Drain ("Miller") Charge lb = loicont] @ 25C 70 105 ton) | Turn-on Delay Time Veg = 15V 12 24 t, Rise Time Vp = 9-5 Vigs 11 22 ; l= @ 25C ns tyoty | Turn-off Delay Time b= 'piCont] 55 85 t; | Fall Time Rg = 1.6 12 24 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 11 A mps lon Pulsed Source Current (Body Diode) 44 P Vsp Diode Forward Voltage @ (Vag = OV, I = lotcont) 1.3 Volts t. Reverse Recovery Time (I, = lorconty dl./dt = 100A/ps) 700 ns tr Reverse Recovery Charge (I, = lorcontp dl./dt = 100A/ps) 9 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.45 CAN Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum junction temperature. @ See MIL-STD-750 Method 3471 @ Starting T = +25C, L = 20mH, Rg = 259, Peak |, = 114 Pulse Test: Pulse width < 380 nS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 = 9 iu OO Oo z < 0.08 lu a = oa S 2 0.01 r = 0.005 SINGLE PULSE d 2 N 0.004 10 104 betp | Duty Factor D = itp Peak Ty =Ppm x Zocot+Teo 10 102 107 1.0 10 RECTANGULAR PULSE DURATION (SECONDS ) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT1001RSVR 20 Vag=6V, 10V & 15V Q cc 16 im a => <x ~~ 12 Zz i cc 5 3 8 2 4 or a 4 + 4v 0 BY. 0 100 200 300 400 500 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 40 T) =-55C 7 / ] a | |Vog> Ip (ON) x Rog (ON)MAX. 5 Ww 7S 50 NSEC. PULSE TEST a Ty = 4125C nT 30 H @<os%putycycte a => <x : a ra 20 { or 5 Oo z Ty = #125C f= 10 a Hf" y= 55C a Ty =+425C 5 /] 0 l ZZ 0 2 4 6 8 Ves GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 n 10 cc im a = 8 <= kK a ra 6 oc 3 z 4 << or a 5 95 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 p= 0.5 Ip [Cont] Vag = 10V 2.0 1.5 1.0 0.5 Ryg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.0 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Ip DRAIN CURRENT (AMPERES) 4Vv 0 0 4 8 12 16 20 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 15 Veg = 10V @ 05 |, [Cont] 1.4 1.2 1.0 Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 08 15 20 25 30 5 10 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT a ua on BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.90 50 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 O 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5578 Rev B 050-5578 Rev B APT1001RSVR 50 10u8 11,000 OPERATION HERE o LIMITED BY Rpg ~~ 100nS 5,000 5 10 c $ 6 < 5 <1ms O 5 Z 1,000 uu E f o 5 ~<10mS = 800 5 1 a z Oo & 5 HT =425C <100ms S a Ty =+150C ay J=+ <pDc _ 100 A 50 1 5 10 50 100 500 .01 A 1 10 50 Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 50 'b = 'b [Cont] Vpg=100V DS Ty =+150C Vpg=200V a Oo Vpg=500V Veg GATE-TO-SOURCE VOLTAGE (VOLTS) Iba REVERSE DRAIN CURRENT (AMPERES) 0 4 0 50 100 150 200 250 300 02 04 06 08 10. 12 Qg, TOTAL GATE CHARGE (nC) Vgp: SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE DPAK Package Outline = 4.98 (.196) 15.95 (.628 13.41 (.528 2 <P 8.08 (200) < 138 | } <1351 | wo <- 1.47 (.058) cn | 1.87 (.062) ao 6x NI 453) 457) 46 (.018 6 { O23) {8 Ples} 20 (.001) 78 (.007) 7 (.105) 84 (.112) 1.22 (.048) 1.32 (.052) Heat Sink (Drain) 5.45 (.215) BSC and Leads {2 Ples.} are Plated Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058