MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 176.5 W
Pin Input power Zg=Zl=50Ω 12.5
W
ID Drain current - 25 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 0.85 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25
°C UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.5 - 4.5 V
Pout Output power f=30MHz ,VDD=12.5V 100 110 - W
ηD Drain efficiency Pin=7W, Idq=1.0A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9.6+/-0.3
3.3+/-0.2
4-C2
10.0+/-0.3
R1.6+/-0.15
24.0+/-0.6
18.5+/-0.3
5.0+/-0.3
3
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
2
4.5+/-0.7
6.2+/-0.7
0.1
+0.05
-0.01
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
40
80
120
160
200
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
CHANNEL DISSIPATION
Pch(W)
Vds VS. Crss CHARACTERISTICS
0
10
20
30
40
0102030
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
100
200
300
400
500
0102030
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
50
100
150
200
250
300
0 102030
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vgs=5.7V
Vgs=5.4V
Vgs=5.1V
Vgs=4.8V
Vgs=4.2V
Vgs=6V
Vgs=4.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERIST ICS
0
10
20
30
40
50
0 10203040
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
0
20
40
60
80
100
ηd(%)
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=1A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERIST ICS
0
20
40
60
80
100
120
0246810
Pin(W)
Pout(W) , Idd(A)
20
30
40
50
60
70
80
ηd(%)
Po
ηd
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=1A
Vdd-Po CHARACTERISTI CS
0
20
40
60
80
100
120
140
4 6 8 10 12 14
Vdd(V)
Po(W)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
Idd(A)
Po
Idd
Ta=25°C
f=30MHz
Pin=7W
Idq=1A
Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=30MHz)
35
60
35
54
90
82
14
8
12
C4:15pF,18pF in parallel
C3:68pF,82pF in parallel
L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
C2:33uF*2,220pF in parallel
100
87
100
86
84
C3
C4
72/72/82pF
30/30pF
L4
220/56pF
4.7OHM*2
L3
82/220pF
0-50pF
0-50pF 110pF
270pF
20kOHM
L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
L2
L1
2.7kOHM*2
100OHM
12
4.5
220/56pF
0-110pF
Dimensions:mm
RF-IN
VddVgg
L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire
330uF,50V
C1
RF-OUT
C2
C1:330pF*3,0.022uF in parallel
Note:Board material-teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
20
50
52
14
44
47
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTE RISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 8.86-j14.31 0.64-j0.01 Po=115W, Vdd=12.5V,Pin=7W
f=30MHz Zout
f=30MHz Zin
Zo=10Ω
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
6/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
10 0.835 -158.6 31.451 94.8 0.014 5.2 0.770 -162.1
30 0.839 -171.1 10.628 79.3 0.014 -9.9 0.764 -171.6
50 0.849 -172.9 6.212 71.0 0.012 -20.7 0.786 -171.4
100 0.886 -173.9 2.749 54.1 0.012 -34.1 0.842 -171.4
150 0.915 -175.1 1.541 40.2 0.009 -27.8 0.880 -173.6
200 0.932 -176.4 0.972 31.6 0.007 -36.9 0.908 -174.3
250 0.945 -177.3 0.671 24.5 0.006 -54.4 0.946 -176.2
300 0.951 -178.2 0.481 20.1 0.005 -30.4 0.941 -177.4
350 0.958 -179.3 0.365 15.2 0.003 13.1 0.952 -178.3
400 0.960 -179.8 0.291 13.4 0.003 -18.0 0.974 -179.8
450 0.964 179.5 0.243 8.5 0.004 45.3 0.963 179.6
500 0.966 178.7 0.195 6.8 0.003 42.3 0.971 178.6
550 0.970 178.2 0.154 5.2 0.004 78.6 0.975 177.5
600 0.967 177.5 0.133 4.8 0.005 80.1 0.965 176.8
650 0.971 177.0 0.119 1.0 0.003 72.0 0.972 176.0
700 0.970 176.5 0.109 -1.3 0.006 61.3 0.973 175.1
750 0.969 175.6 0.092 0.6 0.007 67.2 0.964 174.9
800 0.970 175.2 0.080 -4.0 0.005 82.2 0.974 173.9
850 0.976 174.5 0.073 -1.9 0.007 78.7 0.969 173.3
900 0.973 173.9 0.067 -5.4 0.008 69.9 0.973 172.6
950 0.973 173.2 0.058 4.1 0.008 86.8 0.973 171.5
1000 0.977 172.6 0.049 -8.7 0.011 78.7 0.971 171.7
S11 S21 S12 S22
MITSUBISHI RF POWE R MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
