FEATURES
Metal-Semiconductor junction with guard ring
E pitaxial c onstr uc tion
Low forward voltage dr op,low swit c hi ng losses
High surge c apabi lity
M ECHANICAL DATA
Case: J E DE C DO-- 1 5,molded plastic
Terminals: Axial lead ,solder able per
MIL- S TD- 202,Method 208
P olarity: Color band denotes cathode
W ei ght: 0.014 ounces,0.39 grams
Mounting posit i on: Any
Ratings at 25 ambient tempera ture unless other wise speci fied.
S ingle phase,half wave,60 Hz,r esist ive or induc tive load. F or c apacitive load,der ate by 20%.
SB230 SB240 SB250 SB260 UNITS
Maxi mum recurrent peak reverse voltage VRRM 30 40 50 60 V
Maximum RMS voltage VRMS
21 28 35 42 V
Maximum DC blocking voltage VDC 30 40 50 60 V
Maxi mum average forward rectified current
9.5mm lead length, @TA=75
Peak forw ard surge curren t
8.3ms single ha lf-sine-w ave
superimposed on rated load @TJ=125
Maxi mum instantaneous forward voltage
@ 2.0A (Note1)
VF
V
Maximum reverse current @T A=25
at rated DC blocking voltage @TA=100
Typical j unction capacitance (Note2) CJpF
Typical thermal resistance (Note3) RθJA /W
Operating junction temperature range TJ
Storage temperature range TSTG
Note: 1. Pulse tes t : 300 s pulse widt h,1% dut y c ycle.
SB2 2 0 --- SB2 6 0
A
For use in low voltage,high frequency inver ters free
xxxx wheeling,and polari ty pr otec tion applic ations
IF(AV)
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 --- 60V
CURRENT: 2.0 A
DO - 1 5
3.Thermal resistance junction to ambient.
mA
IR
IFSM
2. Meas ured at 1. 0MH z and applied revers e voltage of 4. 0V D C .
A
35
0.55
- 55 ---- + 150
20
The plastic mater ial c ar ries U/L rec ogni tion 94V- 0
20
SB220
M AXI MUM RAT ING S AND ELECT RI CAL CHARACT ERI S T I CS
14
- 55 ---- + 125
GALAXY EL ECTRICAL
50.0
170
2.0
20.0
0.5
0.70
www.galaxycn.com
BL
Document Number 0266005 1.
BLGALAXY ELECTRICAL