HBDM60V600
W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
Features
• Epitaxial Planar Die Construction
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Sub-Component P/N Reference Device Type
MMBT2907A_DIE Q1 PNP Transistor
MMBTA06_DIE Q2 NPN Transistor
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Schematic & Pin Configuration
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.016 grams (approximate)
EQ1
BQ2
EQ2
CQ1
CQ2
Q2
MMBTA06
Q1
MMBT2907A
BQ1
Top View
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 1 of 7
www.diodes.com July 2008
© Diodes Incorporated
Maximum Ratings: Total Device @TA = 25°C unless otherwise specified
Device Schematic
Characteristic Symbol Value Unit
Operating and Storage Junction Temperature Range VEBO -55 to +150 °C
Thermal Characteristics: Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD 200 mW
Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 625 °C/W
Maximum Ratings: Sub-Component Devices @TA = 25°C unless otherwise specified
Characteristic Symbol Q1-PNP Transistor
(MMBT2907A) Q2-NPN Transistor
(MMBTA06) Unit
Collector-Base Voltage VCBO -60 80 V
Collector-Emitter Voltage VCEO -60 65 V
Emitter-Base Voltage VEBO -5.5 6 V
Collector Current - Continuous (Note 3) IC -600 500 mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Please click here to visit our online spice models database.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 2 of 7
www.diodes.com July 2008
© Diodes Incorporated
HBDM60V600
W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.5 ⎯ V IE = -10μA, IC = 0
Collector Cutoff Current ICBO ⎯ -10 nA
VCB = -50V, IE = 0
Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ⎯ -50 nA
VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE
100
100
100
100
50
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
⎯
⎯
IC = -100μA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.3
-0.5 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -0.95
-1.3 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT 100 ⎯ MHz VCE = -2.0V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ 45 ns
Delay Time td ⎯ 10 ns
Rise Time tr ⎯ 40 ns
VCE = -30V, IC = -150mA,
IB1 = -15mA
Turn-Off Time toff ⎯ 100 ns
Storage Time ts ⎯ 80 ns
Fall Time tr ⎯ 30 ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO 80 ⎯ ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 65 ⎯ ⎯ V IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ ⎯ V IE = 100μA, IC = 0
Collector-Base Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 80V, IE = 0
Collector Cutoff Current ICES ⎯ ⎯ 100 nA
VCE = 90V, VBE = 0
Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 4) 250 ⎯ ⎯ ⎯ V
CE = 1V, IC = 10mA
DC Current Gain
hFE 100 ⎯ ⎯ ⎯ VCE = 1V, IC = 100mA
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.2 0.4 V IC = 100mA, IB = 10mA
Base-Emitter Turn-on Voltage VBE(ON) 0.7 0.75 0.8 V
VCE = 1V, IC = 100mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 0.95 V IC = 100mA, IB = 5mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT 100 ⎯ ⎯ MHz VCE = 20V, IC = 10mA,
f = 100MHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.
HBDM60V600
W
Typical Characteristics @TA = 25°C unless otherwise specified
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEM PERA TURE (°C)
Fig. 1 Power Derating Curve
A
150
200
0
PNP (MMBT2907A) Transistor (Q1) Plots:
1.0
5.0
20
10
30
0.1 10
1.0 30
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
REVERSE VOLTAGE (V )
Fig. 2 T ypical Capacitance
Cobo
Cibo
-I , BASE CURRENT (mA )
Fig. 3 T ypical Collector Saturation Region
B
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 3 of 7
www.diodes.com July 2008
© Diodes Incorporated
0
0.1
0.2
0.3
0.6
0.5
0.4
110
100 1,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation V oltage vs. Collector Current
C
-V ,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOL TAGE (V)
CE(SAT)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
-I , COLLECTOR CURRENT (mA)
Fig. 5 T ypical DC Current Gain vs. Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
HBDM60V600
W
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110
-V , BASE EMI
100
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
-I , COLLECTOR CURRENT (mA)
Fig . 6 Typi cal Base Emitter Volt age vs. Coll ect or Cu r re nt
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
110 100
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
-I , COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
C
NPN (MMBTA06) Transistor (Q2) Plots
0.001 0.01 I BASE CURRENT (mA)
Fig. 9 T ypical Collector Saturation Region
B,
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 110 100
V,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I , COLLECTOR-BASE CURRENT (nA)
CBO
ture
T , AMBIENT TEMPERA T URE (ºC)
Fig . 8 Typ ical C ollect or - Cutoff Cu r rent vs. Am bien t Tem pera
A
10
0.01
0.1
1
25 50 75 100 125
1
10
1,000
10,000
100
110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 11 T y pical DC Current Gain vs. Collector Curren
C
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 4 of 7
www.diodes.com July 2008
© Diodes Incorporated
110
100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATIO N VOLTAGE (V )
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 10 T ypical Collector Emitter Saturation Voltage vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
I
I
C
B
= 10
t
100
HBDM60V600
W
1
10
1,000
100
110
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 13 T ypical Gain Bandwidth Product vs. Collector Current
C
0.1
0.2
0.1 110
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I , COLLECTOR CURRENT (mA)
Fig. 12 T ypical Base Emitter V oltage vs. Collector Current
C
Current Schematic along with Application Example:
Q4
R1 36
BQ1
EQ1
R8
1k
BQ2
CQ2 CQ2
R3
Q2 MMBTA06
C1
BQ1
Q1 MMBT2907A
HBDM60V600W
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 5 of 7
www.diodes.com July 2008
© Diodes Incorporated
BQ2
0
Q3
Half H-Bridge
Q2
MMBTA06
0
Reverse
D4
Forward
C2
R5
1k
D1
CQ1
CQ1
Half H-Bridge
Motor
D3
D2
Q1
MMBT2907A
R4
EQ2
9V-12V
HBDM60V600W
Note: D1, D2, D3, D4: Switching Diodes (MMBD4448)
Q3, Q4: NPN Transistors (MMBTA06)
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 6 of 7
www.diodes.com July 2008
© Diodes Incorporated
HBDM60V600
W
Application Example Schematic: (with Package Pinouts)
R4
470
Reverse
R3
470
Control Input 5V/0V
U4
HBDM60V600W
BQ1
BQ2
CQ2 EQ2
EQ1
CQ1
1
2
34
5
6
U5
MMMBD4448HTW
A1
A2
A3 C3
C2
C1
1
2
34
5
6
INV5V0W
U3
EQ1
BQ2
CQ2 EQ2
BQ1
CQ1
1
2
34
5
6
R1
36
R2
33k
U1
MMBD4448DW
A1
NC
C2 A2
HBDM60V600W
Document number: DS30701 Rev. 5 - 2 6 of 7
www.diodes.com July 2008
© Diodes Incorporated
Application Example Schematic: (with Package Pinouts)
HBDM60V600
W
R4
470
Reverse
R3
470
Control Input 5V/0V
U4
HBDM60V600W
BQ1
BQ2
CQ2 EQ2
EQ1
CQ1
1
2
34
5
6
U5
MBD4448HTW
A1
A2
A3 C3
C2
C1
1
2
34
5
6
INV5V0W
U3
EQ1
BQ2
CQ2 EQ2
BQ1
CQ1
1
2
34
5
6
R1
36
R2
33k
U1
MMBD4448DW
A1
NC
C2 A2
NC
C1
1
2
34
5
6
C1
C2
U2
HBDM60V600W
BQ1
BQ2
CQ2 EQ2
EQ1
CQ1
1
2
34
5
6
Motor
R5
1k
R6
1k
9V-12V
Forward
Q1
Ordering Information (Note 5)
Part Number Case Packaging
HBDM60V600W-7 SOT-363 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
HB01 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
HB01
YM
HBDM60V600W
Document number: DS30701 Rev es.com July 2008
© Diodes Incorporated
Package Outline Dimensions
HBDM60V600
W
Suggested Pad Layout
. 5 - 2 7 of 7
www.diod
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; ghts of others. The user of products in such applications shall neither does it convey any license under its patent rights, nor the ri
assume all risks of such rporated a are represented on our website, use and will agree to hold Diodes Inco nd all the companies whose products
harmless against all damages. LIFE SUPPORT
Diodes Incorporated pro al compo ystems without the expressed written ducts are not authorized for use as critic nents in life support devices or s
approval of the President of Diodes Incorporated.
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65
A
M
JL
D
B C
H
K
F
E E
X
Z
Y
C
G
