ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFETTM MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m Nominal load current (VIN = 5V) 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication. Features S * Status pin (analog status indication) * Short circuit protection with auto restart * Over voltage protection (active clamp) * Thermal shutdown with auto restart * Over-current protection * Input protection (ESD) * Load dump protection (actively protects load) * Logic level input * High continuous current rating Status D IN Top view Note: The tab is connected to the drain pin and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. Ordering information Device Part mark Reel size (inches) Tape width (mm) Quantity per reel ZXMS6002GTA ZXMS6002 7 12 embossed 1000 Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 1 www.zetex.com ZXMS6002G Functional block diagram D Over voltage protection dV/dt limitation IN Human body ESD protection Over current protection Logic Over temperature protection S Applications and information * Especially suited for loads with a high in-rush current such as lamps and motors * All types of resistive, inductive and capacitive loads in switching applications * C compatible power switch for 12V and 24V DC applications * Automotive rated * Replaces electromechanical relays and discrete circuits * Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/ board combination, rather than by the protection circuitry Note: This does not compromise the product's ability to self-protect during short-circuit load conditions. * Status pin voltage reflects the gate drive being applied internally to the power MOSFET. With VIN = 5V: Status voltage ~ 5V indicates normal operation. Status voltage ~ (2-3)V indicates that the device is in current-limiting mode. Status voltage < 1V indicates that the device is in thermal shutdown. Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 2 www.zetex.com ZXMS6002G Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 3 www.zetex.com ZXMS6002G Absolute maximum ratings Parameter Symbol Limit Unit VDS 60 V Drain-source voltage for short circuit protection VIN=5V VDS(SC) 36 V Drain-source voltage for short circuit protection VIN=10V VDS(SC) 20 V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range T j, -40 to +150 C Storage temperature range Tstg -55 to +150 C PD 2.5 W Continuous drain current @ VIN=10V; Tamb=25C(a) ID 1.6 A Continuous drain current @ VIN=5V; Tamb=25C(a) ID 1.4 A Continuous source current (body diode)(a) IS 3 A IS 4.7 A EAS 550 mJ VLoadDump 80 V VESD 4000 V Continuous drain-source voltage Power dissipation @ Tamb =25C(a) Pulsed source current (body diode)(b) Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) RJA 50 C/W Junction to ambient(b) RJA 28 C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 4 www.zetex.com ZXMS6002G Characteristics Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 5 www.zetex.com ZXMS6002G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Drain-source clamp voltage VDS(AZ) 60 70 75 V Off state drain current IDSS 0.1 3 A VDS=12V, VIN=0V Off state drain current IDSS 3 15 A VDS=32V, VIN=0V Input threshold voltage (*) VIN(th) V VDS=VGS, ID=1mA Input current IIN 0.7 1.2 mA VIN=+5V Input current IIN 1.5 2.7 mA VIN=+7V Input current IIN 4 7 mA VIN=+10V Static drain-source on-state resistance RDS(on) 520 675 m VIN=5V, ID=0.7A Static drain-source on-state resistance RDS(on) 385 500 m VIN=10V, ID=0.7A Current limit () ID(LIM) 0.7 1.0 1.5 A VIN=5V, VDS>5V Current limit() ID(LIM) 1.0 1.8 2.3 A VIN=10V, VDS>5V 13 20 s RL=22, VIN=10V to 0V, VDD=12V Slew rate on (70 to 50% VDD) -dVDS/dton 8 20 V/s RL=22, VIN=0 to 10V, VDD=12V Slew rate off (50 to 70% VDD) DVDS/dton 3.2 10 V/s RL=22, VIN=10V to 0V, VDD=12V Static characteristics 1 2.1 ID=10mA Dynamic characteristics Turn-off time (VIN to 90% ID) toff Protection functions () Required input voltage for over temperature protection VPROT 4.5 Thermal overload trip temperature TJT 150 Unclamped single pulse inductive energy Tj=25C EAS 550 mJ ID(ISO)=0.7A, VDD=32V Unclamped single pulse inductive energy Tj=150C EAS 200 mJ ID(ISO)=0.7A, VDD=32V Thermal hysteresis Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 V 175 1 6 C C www.zetex.com ZXMS6002G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Status flag Normal operation VSTATUS 4.95 V VIN = 5V Current limit operating VSTATUS 2.5 V VIN = 5V Thermal shutdown activated VSTATUS 0.2 V VIN = 5V Normal operation VSTATUS 8.0 V VIN = 10V Current limit operation VSTATUS 3.0 V VIN = 10V Thermal shutdown activated VSTATUS 0.35 1 V VIN = 10V 1 V VIN=0V, -ID=1.4A, 1 Inverse diode Source drain voltage VSD NOTES: (*) Protection features may operate outside spec for VIN<4.5V. () The drain current is limited to a reduced value when Vds exceeds a safe level () Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 7 www.zetex.com ZXMS6002G Typical characteristics Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 8 www.zetex.com ZXMS6002G Package outline - SOT223 DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - March 2007 (c) Zetex Semiconductors plc 2007 9 www.zetex.com ZXMS6002G Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 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Samples may be available "Active" Product status recommended for new designs "Last time buy (LTB)" Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs" Device is still in production to support existing designs and production "Obsolete" Production has been discontinued Datasheet status key: "Draft version" This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version" This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue" This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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