PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET(R) Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET 1 8 P-Ch -55V G1 2 7 D1 V(BR)DSS 55V S2 3 6 D2 RDS(on) typ. 0.043 0.095 G2 4 5 D2 max. 0.050 0.105 P-CHANNEL MOSFET Top View ID Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. N-Ch D1 4.7A -3.4A SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range g g c e d Max. Units N-Channel P-Channel 55 4.7 3.8 38 -55 -3.4 -2.7 -27 2.0 1.3 72 4.7 A W 114 -3.4 0.20 20 5.0 V -5.0 -55 to + 150 mJ A mJ V V/ns C Thermal Resistance RJA Junction-to-Ambient g Parameter Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 09/22/11 AUIRF7343Q Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient N-Ch P-Ch N-Ch P-Ch N-Ch RDS(on) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units 55 -55 --- --- --- --- --- --- 1.0 -1.0 7.9 3.3 --- --- --- --- --- --- --- 0.059 0.054 0.043 0.056 0.095 0.150 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.050 0.065 0.105 0.170 --- --- --- --- 2.0 -2.0 25 -25 100 Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 4.7A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.4A VGS = -4.5V, ID = -2.7A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 10V, ID = 4.5A S VDS = -10V, ID = -3.1A VDS = 55V, VGS = 0V VDS = -55V, VGS = 0V A VDS = 55V, VGS = 0V, TJ = 55C VDS = -55V, VGS = 0V, TJ = 55C nA VGS = 20V f f f f f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) Parameter Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units 24 26 2.3 3.0 7.0 8.4 8.3 14 3.2 10 32 43 13 22 36 38 3.4 4.5 10 13 12 22 4.8 15 48 64 20 32 740 690 --- 190 210 71 --- Conditions N-Channel ID = 4.5A VDS = 44V, VGS =10V nC f P-Channel ID = -3.1A VDS = -44V, VGS =-10V ns N-Channel VDD = 28V, ID=1.0A, RG = 6.0 RD = 28 P-Channel VDD = -28V, ID=-1.0A, RG = 6.0 RD = 28 f N-Channel VGS = 0V, VDS = 25V, f =1.0Mhz pF --- P-Channel VGS = 0V, VDS = -25V, f =1.0Mhz 86 Diode Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C P-Channel I SD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C 2 Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.70 -0.80 60 54 120 85 2.0 -2.0 38 -27 1.2 -1.2 90 80 170 130 Conditions A V ns nC e e TJ = 25C, IS = 2.0A, VGS = 0V TJ = 25C, IS = -2.0A, VGS = 0V N-Channel TJ = 25C, IF = 2.0A di/dt = 100A/s P-Channel TJ = 25C, IF = -2.0A di/dt = 100A/s f N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. www.irf.com AUIRF7343Q Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level ESD RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Machine Model Class M2 (200V) (per AEC-Q101-002) Human Body Model Class H1A (500V) (per AEC-Q101-001) Charged Device Model Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRF7343Q 100 N-Channel 100 VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 3.0V 1 0.1 VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP TOP 20s PULSE WIDTH TJ = 25 C 1 10 10 3.0V 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 25 C TJ = 150 C 10 1 V DS = 25V 20s PULSE WIDTH 3 4 5 6 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 TJ = 150 C 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com AUIRF7343Q N-Channel ID = 4.7A R DS (on), Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.120 0.100 0.080 VGS = 4.5V 0.060 VGS = 10V 0.040 TJ , Junction Temperature ( C) 20 30 40 Fig 6. Typical On-Resistance Vs. Drain Current 200 0.10 0.08 I D = 4.7A 0.06 0.04 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 10 A EAS , Single Pulse Avalanche Energy (mJ) 0.12 RDS(on) , Drain-to-Source On Resistance ( ) 10 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com 0 TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 120 80 40 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 8. Maximum Avalanche Energy Vs. Drain Current 5 AUIRF7343Q 1200 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) N-Channel Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 1 10 0 100 0 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com AUIRF7343Q P-Channel 100 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V TOP TOP -3.0V 1 10 -3.0V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 100 100 100 -ISD , Reverse Drain Current (A) 100 -I D , Drain-to-Source Current (A) 10 Fig 13. Typical Output Characteristics Fig 12. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 V DS = -25V 20s PULSE WIDTH 3 4 5 6 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics www.irf.com 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TJ = 150 C 0.1 0.1 7 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VSD ,Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage 7 AUIRF7343Q 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 R DS (on) , Drain-to-Source On Resistance () ID = -3.4 A () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 P-Channel 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 TJ , Junction Temperature ( C) 0 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 0.35 0.25 I D = -3.4 A 0.15 0.05 8 11 6 8 10 12 Fig 17. Typical On-Resistance Vs. Drain Current 0.45 5 4 -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature 2 2 14 A 300 ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 -V GS , Gate-to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage 8 Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com AUIRF7343Q P-Channel VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 960 Ciss 720 480 Coss 240 Crss 0 1 10 20 -VGS , Gate-to-Source Voltage (V) 1200 -VDS , Drain-to-Source Voltage (V) VDS =-48V VDS =-30V VDS =-12V 16 12 8 4 0 100 ID = -3.1A 0 10 20 30 40 QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 9 AUIRF7343Q SO-8 Package Outline Dimensions are shown in millimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 8X b 0.25 [.010] A A1 MILLIMETERS MAX A 5 INCHES MIN MAX .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] C A B 8X L 8X c 7 F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF7343Q SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com 11 AUIRF7343Q Ordering Information Base part AUIRF7343Q 12 Package Type SO-8 Standard Pack Form Tube Tape and Reel Complete Part Number Quantity 95 4000 AUIRF7343Q AUIRF7343QTR www.irf.com AUIRF7343Q IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. 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