HEXFET® Power MOSFET
09/22/11
AUIRF7343Q
Description
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
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Features
lAdvanced Planar Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l150°C Operating Temperature
lAutomotive [Q101] Qualified*
lLead-Free, RoHS Compliant
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
SO-8
PD - 96343B
AUTOMOTIVE MOSFET
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
GDS
Gate Drain Source
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 55 -55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7 -3.4
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8 -2.7
I
DM
Pulsed Drain Current
c
38 -27
P
D
@T
A
= 25°C Power Dissipation
g
P
D
@T
A
= 70°C Power Dissipation
g
E
AS
Single Pulse Avalanche Energy
e
72 114 mJ
I
AR
Avalanche Current 4.7 -3.4 A
E
AR
Repetitive Avalanche Energy mJ
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery dv/dt
d
5.0 -5.0 V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
Junction-to-Ambient
g
––– 62.5
°C/W
Parameter
2.0
1.3
Max.
W
0.20
A
°C
± 20
-55 to + 150
N-Ch P-Ch
V
(BR)DSS
55V -55V
R
DS(on)
typ. 0.043Ω0.095Ω
max. 0.050Ω0.105Ω
I
D
4.7A -3.4A
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2www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 22 )
Notes:
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
N-Ch 55 ––– –––
P-Ch -55 ––– –––
N-Ch ––– 0.059 –––
P-Ch ––– 0.054 –––
––– 0.043 0.050
––– 0.056 0.065
––– 0.095 0.105
––– 0.150 0.170
N-Ch 1.0 ––– –––
P-Ch -1.0 ––– –––
N-Ch 7.9 ––– –––
P-Ch 3.3 ––– –––
N-Ch ––– ––– 2.0
P-Ch ––– ––– -2.0
N-Ch ––– ––– 25
P-Ch ––– ––– -25
I
GSS
Gate-to-Source Forward Leakage ––– ––– ± 100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter Min. Typ. Max. Units
N-Ch ––– 24 36
P-Ch ––– 26 38
N-Ch ––– 2.3 3.4
P-Ch ––– 3.0 4.5
N-Ch ––– 7.0 10 I
D
= -3.1A V
DS
= -44V, V
GS
=-10V
P-Ch ––– 8.4 13
N-Ch ––– 8.3 12
P-Ch ––– 14 22
N-Ch ––– 3.2 4.8
P-Ch ––– 10 15
N-Ch ––– 32 48
P-Ch ––– 43 64
N-Ch ––– 13 20
P-Ch ––– 22 32
N-Ch ––– 740 –––
P-Ch –––
690
N-Ch ––– 190 –––
P-Ch ––– 210
N-Ch –––
71
–––
VGS = 0V, V
DS
= -25V, f =1.0Mhz
P-Ch ––– 86
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current N-Ch ––– ––– 2.0
(Body Diode) P-Ch ––– ––– -2.0
I
SM
Pulsed Source Current N-Ch ––– ––– 38
(Body Diode)
c
P-Ch ––– ––– -27
N-Ch ––– 0.70 1.2
P-Ch ––– -0.80 -1.2
N-Ch ––– 60 90
P-Ch ––– 54 80
N-Ch ––– 120 170
P-Ch –––85130
V
GS
= -4.5V, I
D
= -2.7A
f
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.1A
f
V
DS
= -55V, V
GS
= 0V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 3.8A
f
V
GS
= -10V, I
D
= -3.4A
f
V
Ω
V/°C
V
VGS = 0V, V
DS
= 25V, f =1.0Mhz
P-Channel
ns
V
DD
= 28V, ID=1.0A, RG = 6.0Ω
P-Channel
f
R
D
= 28Ω
V
ns
nC
T
J
= 25°C, I
F
= 2.0A di/dt = 100A/μs ƒ
T
J
= 25°C, I
F
= -2.0A di/dt = 100A/μs ƒ
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
e
pF
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
Drain-to-Source Leakage Current
I
DSS
Q
g
Total Gate Charge
V
GS(th)
Gate Threshold Voltage
gfs Forward Transconductance
R
DS(on)
Static Drain-to-Source On-Resistance
N-Ch
P-Ch
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
A
nC
μA
nA
I
D
= 4.5A V
DS
= 44V, V
GS
=10V
P-Channel
f
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
DS
= 10V, I
D
= 4.5A
f
N-Channel
V
GS
= ± 20V
Conditions
N-Channel
R
D
= 28Ω
V
DD
= -28V, ID=-1.0A, RG = 6.0Ω
S
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
e
N-Channel
P-Channel
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.7A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= -55V, V
GS
= 0V, T
J
= 55°C
Conditions
N-Channel
AUIRF7343Q
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Qualification Information
†
SO-8 MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Charged Device
Model
Class C5 (1125V)
†††
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M2 (200V)
†††
(per AEC-Q101-002)
Human Body Model Class H1A (500V)
†††
(per AEC-Q101-001)
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
AUIRF7343Q
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1
10
100
3 4 5 6
V = 25V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
3.0V
4.5V
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
3.0V
4.5V
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Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.7A
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.1A
3.8A
4.7A
0.04
0.06
0.08
0.10
0.12
0246810
A
GS
V , Gate-to-Source Voltage (V)
I = 4.7A
D
010 20 30 40
0.040
0.060
0.080
0.100
0.120
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
(Ω)
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1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.5A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Fig 14. Typical Transfer Characteristics
Fig 13. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Fig 15. Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
34567
V = -25V
20μs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
-4.5V
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-3.0V
-4.5V
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Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
Fig 17. Typical On-Resistance Vs. Drain
Current
Fig 18. Typical On-Resistance Vs. Gate
Voltage
P-Channel
(Ω)
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-3.4 A
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.5A
-2.7A
-3.4A
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0.05
0.15
0.25
0.35
0.45
2581114
A
GS
-V , Gate-to-Source Voltage (V)
I = -3.4 A
D
0246810 12
0.080
0.120
0.160
0.200
0.240
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -4.5V
VGS = -10V
(Ω)
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010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-3.1A
V =-12V
DS
V =-30V
DS
V =-48V
DS
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
1 10 100
0
240
480
720
960
1200
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS - 012 AA.
NOT ES :
1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994.
2. CONT ROL LING DIME NS ION: MILLIMET ER
3. DIME NS IONS ARE S HOWN IN MILL IMET ERS [INCHE S ].
5 DIME NS ION DOE S NOT INCL U DE MOLD PR OT RUS IONS .
6 DIME NS ION DOE S NOT INCL U DE MOLD PR OT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RATE.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF7343Q
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330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
AUIRF7343Q
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Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF7343Q SO-8 Tube 95 AUIRF7343Q
Tape and Reel 4000 AUIRF7343QTR
AUIRF7343Q
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at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105