MF34
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APPLICATIONS
Inverse, Parallel Or Series Connected Diode
Power Supplies
High Frequency Applications
FEATURES
Glass Passivation
High Voltage Capability
Fast Recovery Characteristics
VOLTAGE RATINGS
KEY PARAMETERS
VRRM 1600V
IF(AV) 40A
IFSM 400A
Qr25µC
trr 0.25ns
1600
1400
1200
1000
800
MF34 - 1600
MF34 -1400
MF34 - 1200
MF34 -1000
MF34 - 800
Conditions
VRSM = VRRM +100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number. e.g. MF34-1600R.
Type Number Repetitive Peak
Reverse Voltage
VRRM
V
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
IF(AV) Mean forward current
IF(RMS) RMS value
IFContinuous (direct) forward current
Half sine wave resistive load, Tcase = 65oC40A
T
case = 65oC63A
T
case = 65oC50A
MF34
Fast Recovery Diode
Replaces March 1998 version, DS4624-2.1 DS4624-3.0 January 2000
MF34
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SURGE RATINGS
Conditions Max. Units
400 A
800 A2sI2t for fusingI2t
Surge (non-repetitive) forward currentIFSM
ParameterSymbol
10ms half sine; with VRRM 10V, Tj = 125oC
THERMAL AND MECHANICAL DATA
dc
Conditions Max. Units
oC/W- 0.2
Thermal resistance - case to heatsinkRth(c-h)
Thermal resistance - junction to caseRth(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol Parameter
- 0.8 oC/W
Min.
trr
5
Symbol Typ. Units
Parameter
VFM Forward voltage
IRM Peak reverse current
Reverse recovery time
QRRecovered charge
VTO Threshold voltage
rTSlope resistance At Tvj = 125oC - 7.0 m
At Tvj = 125oC - 1.2 V
-25µC
- 250 ns
At VRRM, Tcase = 100oC-mA
At 120A peak, Tcase = 25oC - 2.0 V
Conditions Max.
CHARACTERISTICS
- 125 oC
˚C
125-55Storage temperature rangeTstg
Tvj Virtual junction temperature Forward (conducting) - 125 oC
10ms half sine; Tj = 125oC
Nm
4.03.5Mounting torque-
Reverse (blocking)
IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C,
VR = 100V
IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C,
VR = 100V
MF34
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CURVES
Fig.1 Maximum (limit) forward characteristics
0 1.0 2.0 3.0
Instantaneous forward voltage - (V)
0
50
100
150
200
Instantaneous forward current - (A)
Measured under pulse
conditions
T
j
= 125˚C
T
j
= 25˚C
1235410 50
Cycles at 50Hz
Duration
350
200
Peak half sinewave forward current - (A)
250
300
400 T
case
= 125˚C
V
R
= V
RRM
0.001 0.01 0.1 1.0 10
Time - (s)
0
0.25
0.50
0.75
1.00
Thermal impedance - ˚C/W
d.c.
Fig.2 Surge (non-repetitive) forward current vs time Fig.3 Maximum transient thermal impedance
MF34
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Fig.4 Frequency curves - square waveform
50Hz
100
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
10000
50002500
1000500300
T
case
= 65˚
Fig.5 Frequency curves - square waveform
50Hz
100
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
10000
50002500
1000500300
T
case
= 85˚
Fig.6 Energy per pulse - square waveform
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
2.0J
1.00.50.20.10.05
MF34
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Fig.7 Frequency curves - sine waveform
Fig.8 Frequency curves - sine waveform
Fig.9 Energy per pulse - sine waveform
50Hz
100
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
1000050002500
1000 500300
T
case
= 65˚
50Hz
100
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
1000050002500
1000 500300
T
case
= 85˚
10 100 1000 10000
Pulse width - (µs)
500
100
10
Peak current - (A)
2.0J
1.00.50.20.10.05
MF34
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hex. 17.35mm AF max
2311.5
Ø4.0
Thread 1/4 in
28 UNF 2A
Weight: 20g
Package outline type code: DO5
ASSOCIATED PUBLICATIONS
Title Application Note
Number
Calculating the junction temperature or power semiconductors AN4506
Thyristor and diode measurement with a multi-meter AN4853
Use of VTO, rT on-state characteristic AN5001
MF34
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4624-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
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