© 2008 IXYS CORPORATION, All rights reserved DS99879A(4/08)
VDSS = 1000V
ID25 = 37A
RDS(on) ≤≤
≤≤
≤ 220mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C37A
IDM TC= 25°C, pulse width limited by TJM 110 A
IAR TC= 25°C22A
EAS TC= 25°C2J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 20 V/ns
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
IXFN44N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 3 mA
RDS(on) VGS = 10V, ID = 22A, Note 1 220 mΩ
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
zInternational standard package
zEncapsulating epoxy meets
UL 94 V-0, flammability classification
zminiBLOC with Aluminium nitride
isolation
zFast recovery diode
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
zSwitched-mode and resonant-mode
power supplies
zDC-DC Converters
zLaser Drivers
zAC and DC motor controls
zRobotics and servo controls
PolarTM Power MOSFET
HiPerFETTM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN44N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 22A, Note 1 20 35 S
RGi Gate input resistance 1.70 Ω
Ciss 19 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1060 pF
Crss 41 pF
td(on) Resistive Switching Times 60 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 22A 68 ns
td(off) RG= 1Ω (External) 90 ns
tf 54 ns
Qg(on) 305 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A 104 nC
Qgd 125 nC
RthJC 0.14 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 44 A
ISM Repetitive, pulse width limited by TJM 176 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.5 μC
IRM 17 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 22A, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
© 2008 IXYS CORPORATION, All rights reserved
Fi g. 1. Ou tp u t Char acter i sti c s
@ 25ºC
0
5
10
15
20
25
30
35
40
45
01234567891011
V
DS
- Volts
I
D
- A mp er es
V
GS
= 10V
9V
7V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mp er es
V
GS
= 10V
9V
7V
8V
Fig. 3. Output Characteristics
@ 125ºC
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 1012141618202224
V
DS
- Volts
I
D
- A mp er es
V
GS
= 10V
8V
7V
6V
Fig. 4. R
DS(on)
No r mali z ed to I
D
= 22A Value
vs. Ju nction T e mp eratur e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centi grad e
R
DS(on)
- No rmaliz ed
V
GS
= 10V
I
D
= 44A
I
D
= 22A
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value
vs. Dr ai n Cu r ren t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 102030405060708090
I
D
- Amp eres
R
DS(on)
- No rmaliz ed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6 . Maximu m Dr ai n C u r r ent vs.
Cas e Temp er at u r e
0
5
10
15
20
25
30
35
40
-50-250 255075100125150
T
C
- Degrees Centigrad e
I
D
- A mp ere s
IXFN44N100P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN44N100P
IXYS REF: F_44N100P(97)4-01-08-D
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
55.566.577.588.59
V
GS
- Vo lts
I
D
- A m p e res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
5
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amperes
g
f s
- Siem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- A mp e res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 500V
I
D
= 22A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g. 12. Maximu m T r ansi en t Th er mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
