PD - 96222 IRGB4086PbF IRGS4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C TJ max 300 1.90 250 150 c V V A C C G G E n-channel G G ate C E G C E TO-220AB D2 Pak IRGB4086PbF IRGS4086PbF C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Max. Units 30 V 70 40 A Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation 250 160 W 63 1.3 W/C -40 to + 150 C 300 10lb in (1.1N m) N Parameter VGE IC @ TC = 25C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG c Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw x x Thermal Resistance Parameter RJC (IGBT) RCS RJA www.irf.com Thermal Resistance Junction-to-Case-(each IGBT) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Weight df d Typ. Max. --- 0.24 --- 6.0 (0.21) 0.8 --- 40 --- Units C/W g (oz) 1 02/02/09 IRGB/S4086PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. BVCES Collector-to-Emitter Breakdown Voltag 300 VCES/TJ Breakdown Voltage Temp. Coefficient --- --- --- VCE(on) Static Collector-to-Emitter Voltage --- --- --- VGE(th) Gate Threshold Voltage 2.6 VGE(th)/TJ Gate Threshold Voltage Coefficient --- ICES Collector-to-Emitter Leakage Current --- --- --- IGES Gate-to-Emitter Forward Leakage --- Gate-to-Emitter Reverse Leakage --- gfe Forward Transconductance --- Qg Total Gate Charge --- Qgc Gate-to-Collector Charge --- td(on) Turn-On delay time -- tr Rise time -- td(off) Turn-Off delay time -- tf Fall time -- td(on) Turn-On delay time -- tr Rise time -- td(off) Turn-Off delay time -- tf Fall time -- tst Shoot Through Blocking Time 100 --- 0.29 1.29 1.49 1.90 2.57 2.27 --- -11 2.0 5.0 100 --- --- 29 65 22 36 31 112 65 30 33 145 --- 1075 --- 1432 --- --- --- --- 2250 110 58 5.0 EPULSE Ciss Coss Crss LC Energy per Pulse Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance 98 --- --- V VGE = 0V, ICE = 1 mA --- V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A 1.55 VGE = 15V, ICE = 40A 1.67 2.10 V VGE = 15V, ICE = 70A VGE = 15V, ICE = 120A 2.96 VGE = 15V, ICE = 70A, TJ = 150C --- 5.0 V VCE = VGE, ICE = 500A --- mV/C 25 A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 100C --- VCE = 300V, VGE = 0V, TJ = 150C --- 100 nA VGE = 30V VGE = -30V -100 --- S VCE = 25V, ICE = 25A --- nC VCE = 200V, IC = 25A, VGE = 15V --- IC = 25A, VCC = 196V -- -- ns RG = 10, L=200H, LS= 200nH TJ = 25C -- -- IC = 25A, VCC = 196V -- -- ns RG = 10, L=200H, LS= 200nH TJ = 150C -- -- --- ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V --- J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V --- VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V --- --- pF VCE = 30V e e e e e = 1.0MHz, --- --- nH LE Internal Emitter Inductance Notes: Half sine wave with duty cycle = 0.1, ton=2sec. R is measured at TJ of approximately 90C. 2 --- Conditions Typ. Max. Units 13 --- See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Pulse width 400s; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recomended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRGB/S4086PbF 240 240 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 200 200 160 VGE = 8.0V VGE = 6.0V 120 ICE (A) ICE (A) 160 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 120 80 80 40 40 0 VGE = 8.0V VGE = 6.0V 0 0 4 8 12 16 0 4 8 VCE (V) Fig 1. Typical Output Characteristics @ 25C 160 VGE = 8.0V VGE = 6.0V 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 200 ICE (A) ICE (A) 240 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 160 16 Fig 2. Typical Output Characteristics @ 75C 240 200 12 VCE (V) 120 80 80 40 40 0 VGE = 8.0V VGE = 6.0V 0 0 4 8 12 16 0 4 8 VCE (V) 12 16 VCE (V) Fig 3. Typical Output Characteristics @ 125C Fig 4. Typical Output Characteristics @ 150C 240 10 IC = 25A 200 8 T J = 25C T J = 150C VCE (V) ICE (A) 160 120 TJ = 25C TJ = 150C 6 4 80 2 40 0 0 2 4 6 8 10 12 14 VGE (V) Fig 5. Typical Transfer Characteristics www.irf.com 16 5 10 15 20 V GE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRGB/S4086PbF 80 300 Repetitive Peak Current (A) IC, Collector Current (A) 70 60 50 40 30 20 200 100 ton= 2s Duty cycle = 0.1 Half Sine Wave 10 0 0 0 25 50 75 100 125 25 150 T C, Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature 75 100 125 150 Case Temperature (C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1600 1500 1400 VCC = 240V 1300 L = 220nH C = variable L = 220nH C = 0.4F 1400 100C 1200 Energy per Pulse (J) Energy per Pulse (J) 50 1100 1000 900 800 25C 700 100C 1200 1000 800 25C 600 600 400 500 200 400 160 170 180 190 200 210 220 150 160 170 180 190 200 210 220 230 240 230 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 2000 Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 VCC = 240V L = 220nH t = 1s half sine C= 0.4F 100 1200 10 s 100 s IC (A) Energy per Pulse (J) 1600 C= 0.3F 800 400 10 1ms C= 0.2F 1 0 25 50 75 100 125 TJ, Temperature (C) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 V CE (V) Fig 12. Forward Bias Safe Operating Area www.irf.com IRGB/S4086PbF 25 VGE, Gate-to-Source Voltage (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres ID= 25A VDS = 240V VDS = 200V VDS = 150V 20 15 10 5 0 10 0 100 200 0 300 20 VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 40 60 80 100 QG Total Gate Charge (nC) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 Ri (C/W) C 1 2 2 Ci= i/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 3 3 (sec) 0.084697 0.000038 0.374206 0.001255 0.341867 0.013676 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 5 IRGB/S4086PbF A RG C DRIVER PULSE A L VCC B RG PULSE B Ipulse DUT tST Fig 16b. tst Test Waveforms Fig 16a. tst and EPULSE Test Circuit VCE Energy L IC Current VCC DUT 0 1K Fig 16c. EPULSE Test Waveforms 6 Fig. 17 - Gate Charge Circuit (turn-off) www.irf.com IRGB/S4086PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRGB/S4086PbF D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ $66(0%/< /27&2'( 7+,6,6$1,5)6:,7+ /27&2'( For GB Production $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 /27&2'( '$7(&2'( Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRGB/S4086PbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009 www.irf.com 9