74HC1G02GW - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

File under Integrated Circuits, IC06 1998 Aug 31

INTEGRATED CIRCUITS

74HC1G02; 74HCT1G02

2-input NOR gate

1998 Aug 31 2

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

FEATURES

•Wide operating voltage:

2.0 to 6.0 V

•Symmetrical output impedance

•High noise immunity

•Low power dissipation

•Balanced propagation delays

•Very small 5 pins package

•Output capability: standard.

DESCRIPTION

The 74HC1G/HCT1G02 is a high

speed Si-gate CMOS device.

The 74HC1G/HCT1G02 provides the

2-input NOR function. The standard

output currents are half the values

compared to the 74HC/HCT02.

FUNCTION TABLE

See note 1.

Note

1. H = HIGH voltage level;

L = LOW voltage level.

INPUTS OUTPUT

inA inB outY

LL H

LH L

HL L

HH L

QUICK REFERENCE DATA

GND = 0 V; Tamb =25°C; tr=t

f≤6.0 ns.

Notes

1. CPD is used to determine the dynamic power dissipation PD(µW).

PD=C

PD ×VCC2×fi+∑(CL×VCC2×fo) where:

fi= input frequency in MHz;

fo= output frequency in MHz;

CL= output load capacitance in pF;

VCC = supply voltage in V;

∑(CL×VCC2×fo) = sum of outputs.

2. For HC1G the condition is VI= GND to VCC.

For HCT1G the condition is VI= GND to VCC −1.5 V.

PINNING

SYMBOL PARAMETER CONDITIONS TYPICAL UNIT

HC1G HCT1G

tPHL, tPLH propagation delay

inA, inB to outY CL= 15 pF;

VCC =5V 79ns

Iinput capacitance 1.5 1.5 pF

CPD power dissipation

capacitance notes 1 and 2 18 19 pF

PIN SYMBOL DESCRIPTION

1 inB data input B

2 inA data input A

3 GND ground (0 V)

4 outY data output

CC DC supply voltage

1998 Aug 31 3

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

ORDERING AND PACKAGE INFORMATION

OUTSIDE NORTH

AMERICA

PACKAGES

TEMPERATURE

RANGE PINS PACKAGE MATERIAL CODE MARKING

74HC1G02GW −40 to +125 °C5 SC-88A plastic SOT353 HB

74HCT1G02GW 5 SC-88A plastic SOT353 TB

Fig.1 Pin configuration.

handbook, halfpage

MNA102

VCC

inA

outY

GND

inB

Fig.2 Logic symbol.

handbook, halfpage

MNA103

inB

inA outY

Fig.3 IEC logic symbol.

handbook, halfpage

MNA104

≥

Fig.4 Logic diagram.

handbook, halfpage

MNA105

inB

inA

outY

1998 Aug 31 4

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above +55 °C the value of PD derates linearly with 2.5 mW/K.

SYMBOL PARAMETER 74HC1G02 74HCT1G02 UNIT CONDITIONS

MIN. TYP. MAX. MIN. TYP. MAX.

VCC DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V

VIinput voltage 0 −VCC 0−VCC V

VOoutput voltage 0 −VCC 0−VCC V

Tamb operating ambient

temperature −40 +25 +125 −40 +25 +125 °C see DC and AC

characteristics

per device

tr, tfinput rise and fall times

except for Schmitt

trigger inputs

−−1000 −−−ns VCC = 2.0 V

−−500 −−500 ns VCC = 4.5 V

−−400 −−−ns VCC = 6.0 V

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC DC supply voltage −0.5 +7.0 V

±IIK DC input diode current VI<−0.5VorV

I>V

CC + 0.5 V; note 1 −20 mA

±IOK DC output diode current VO<−0.5V or VO>VCC + 0.5 V; note 1 −20 mA

±IODC output source or sink current

standard outputs −0.5V <VO<VCC +0.5 V; note 1 −12.5 mA

±ICC DC VCC or GND current for types

with standard outputs note 1 −25 mA

Tstg storage temperature −65 +150 °C

PDpower dissipation per package temperature range: −40 to +125 °C;

note 2 −200 mW

1998 Aug 31 5

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

DC CHARACTERISTICS FOR THE 74HC1G

Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Note

1. All typical values are measured at Tamb =25°C.

SYMBOL PARAMETER

Tamb (°C)

UNIT

TEST CONDITIONS

−40 to +85 −40 to +125 VCC (V) OTHER

MIN. TYP.(1) MAX. MIN. MAX.

VIH HIGH-level input

voltage 1.5 1.2 −1.5 −V 2.0

3.15 2.4 −3.15 −4.5

4.2 3.2 −4.2 −6.0

VIL LOW-level input voltage −0.8 0.5 −0.5 V 2.0

−2.1 1.35 −1.35 4.5

−2.8 1.8 −1.8 6.0

VOH HIGH-level output

voltage; all outputs 1.9 2.0 −1.9 −V 2.0 VI=V

IH or VIL:

−IO=20µA

4.4 4.5 −4.4 −4.5

5.9 6.0 −5.9 −6.0

VOH HIGH-level output

voltage; standard

outputs

4.13 4.32 −3.7 −V 4.5 VI=V

IH or VIL;

−IO= 2.0 mA

5.63 5.81 −5.2 −6.0 VI=V

IH or VIL;

−IO= 2.6 mA

VOL LOW-level output

voltage; all outputs −0 0.1 −0.1 V 2.0 VI=V

IH or VIL;

IO=20µA

−0 0.1 −0.1 4.5

−0 0.1 −0.1 6.0

VOL LOW-level output

voltage; standard

outputs

−0.15 0.33 −0.4 V 4.5 VI=V

IH or VIL;

IO= 2.0 mA

−0.16 0.33 −0.4 6.0 VI=V

IH or VIL;

IO= 2.6 mA

IIinput leakage current −−1.0 −1.0 µA 6.0 VI=V

CC or GND

ICC quiescent supply

current −−10 −20 µA 6.0 VI=V

CC or GND;

IO=0

1998 Aug 31 6

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

DC CHARACTERISTICS FOR THE 74HCT1G

Additional type data to the recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Note

1. All typical values are measured at Tamb =25°C.

SYMBOL PARAMETER

Tamb (°C)

UNIT

TEST CONDITIONS

−40 to +85 −40 to +125 VCC (V) OTHER

MIN. TYP.(1) MAX. MIN. MAX.

VIH HIGH-level input

voltage 2.0 1.6 −2.0 −V 4.5 to 5.5

VIL LOW-level input

voltage −1.2 0.8 −0.8 V 4.5 to 5.5

VOH HIGH-level output

voltage; all outputs 4.4 4.5 −4.4 −V 4.5 VI=V

IH or VIL;

−IO=20µA

OH HIGH-level output

voltage; standard

outputs

4.13 4.32 −3.7 −V 4.5 VI=V

IH or VIL;

−IO= 2.0 mA

VOL LOW-level output

voltage; all outputs −0 0.1 −0.1 V 4.5 VI=V

IH or VIL;

IO=20µA

OL LOW-level output

voltage; standard

outputs

−0.15 0.33 −0.4 V 4.5 VI=V

IH or VIL;

IO= 2.0 mA

IIinput leakage current −−1.0 −1.0 µA 5.5 VI=V

CC or GND

ICC quiescent supply

current −−10.0 −20 µA 5.5 VI=V

CC or GND;

IO=0

∆I

CC additional supply

current per input −−500 −850 µA 4.5 to 5.5 VI=V

CC −2.1;

IO=0

1998 Aug 31 7

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

AC CHARACTERISTICS FOR 74HC1G02

GND = 0 V; tr=t

f≤6.0 ns; CL=50pF.

Note

1. All typical values are measured at Tamb =25°C.

AC CHARACTERISTICS FOR 74HCT1G02

GND = 0 V; tr=t

f≤6.0 ns; CL=50pF.

Note

1. All typical values are measured at Tamb =25°C.

SYMBOL PARAMETER

Tamb (°C)

UNIT

TEST CONDITIONS

−40 to +85 −40 to +125 VCC (V) WAVEFORMS

MIN. TYP.(1) MAX. MIN. MAX.

tPHL, tPLH propagation delay

inA, inB to outY −25 115 −135 ns 2.0 see Figs 5 and 6

−923−27 ns 4.5

−820−23 ns 6.0

SYMBOL PARAMETER

Tamb (°C)

UNIT

TEST CONDITIONS

−40 to +85 −40 to +125 VCC (V) WAVEFORMS

MIN. TYP.(1) MAX. MIN. MAX.

tPHL, tPLH propagation delay

inA, inB to outY −11 24 −27 ns 4.5 see Figs 5 and 6

1998 Aug 31 8

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

AC WAVEFORMS

Fig.5 The input (inA, inB) to output (outY)

propagation delay.

handbook, halfpage

MNA106

inA, inB input

outY output

tPHL tPLH

(1)

(1) HC1G02: VM= 50% and VI= GND to VCC.

HCT1G02: VM= 1.3 V and VI= GND to 3.0 V.

Fig.6 Load circuitry for switching times.

Definitions for test circuit:

CL= Load capacitance including jig and probe capacitance

(see “AC characteristics for 74HC1G02” and

“AC characteristics for 74HCT1G02”).

RT= Termination resistance should be equal to the output

impedance Z0 of the pulse generator.

handbook, halfpage

VCC

VIVO

MNA101

D.U.T.

CL50 pF

PULSE

GENERATOR

1998 Aug 31 9

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT353

wBM

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 5 leads SOT353

UNIT A1

max bpcD

E (2) e1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28SC-88A

1998 Aug 31 10

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reﬂow soldering

Reflow soldering techniques are suitable for all SO

packages.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,

thermal conduction by heated belt. Dwell times vary

between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range from

215 to 250 °C.

Preheating is necessary to dry the paste and evaporate

the binding agent. Preheating duration: 45 minutes at

45 °C.

Wave soldering

Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

•A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering

technique should be used.

•The longitudinal axis of the package footprint must be

parallel to the solder flow.

•The package footprint must incorporate solder thieves at

the downstream end.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Maximum permissible solder temperature is 260 °C, and

maximum duration of package immersion in solder is

10 seconds, if cooled to less than 150 °C within

6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

1998 Aug 31 11

Philips Semiconductors Product speciﬁcation

2-input NOR gate 74HC1G02; 74HCT1G02

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Printed in The Netherlands 245106/00/01/pp12 Date of release: 1998 Aug 31 Document order number: 9397 750 03661