| TO-92 Plastic-Encapsulate Transistors Wi. @._ 2N5401 TRANSISTOR(PNP) TO-92 1.EMITTER 2.BASE 3.COLLECTOR FEATURES Pom: 0.625W pay (Tamb=25C) -0.6A lo: oltage -160 V Vierycso: fage junction temperature range Ts, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage V(BR)}CBO Ic= -100u A, te=0 -160 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, Is=0 -150 Vv Emitter-base breakdown voltage V(BR)IEBO le= -10u A, Ic=0 5 v Collector cut-off current Icao Vca= -120 V, te=0 ~0.05 BA Emitter cut-off current lego Ves= -4 V, Ic=0 -0.05 BA hres) Vce= -5 V, Ic= -1 mA 80 DC current gain hrec2) Vce= -5 V, c= -10 mA 80 250 heres; Voe= -5 V, c= -50 mA 50 Collector-emitter saturation voltage VcEsat Ic= -50 mA, la= -5 mA -0.5 Vv Base-emitter saturation voltage VBEsat Ic= -50 mA, In= -5 mA -1 Vv Vce= -5 V, c= -10 mA Transition frequency fr 100 MHz f =30MHz Rank A B Cc Range 85-160 120-180 150-250 Drei nse MERLOT MUSNN RE EME BM ia hre DC CURRENT GAIN Typical Characteristics 2N5401 Vce = 1.0V awe come ome mmm ome Vie = 10V 0.1 0.2 O03 05 0.7 1.0 20 30 507.0 10 20 30 50 70 100 200 300 500 700 1.0K Ic COLLECTOR CURRENT (mA) DC Current Gain Vce COLLECTOR EMITTER VOLTAGE (VOLTS) 0.005 0.01 0.02 0.03 0.05 0.1 02 03 05 1.0 20 30 50 10 20 30 50 Ia, BASE CURRENT (mA) Collector Saturation Region = o a Vee sat @Ic/le = 10 o a V,VOLTAGE (VOLTS) bp o iy VcEsat @Ic/Iep = 10 0 0.1 0.20305 1.0 2.03.0 50 10 20 30 50 100 Ic, COLLECTOR CURRENT (mA) *On* Voltages