Note:
(1) Valid provided that electrodes are kept at ambient temperature
Features
LL4148
SILICON EPITAXIAL PLANAR DIODE
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4148
These diode are delivered taped.
Details see Taping.
Weight approx. : 0.05g
DIMENSIONS
DIM
inches mm
Note
Min. Max. Min. Max.
A 0.134 0.142 3.4 3.6
B 0.055 0.059 1.40 1.50
C 0.008 0.016 0.2 0.4
Absolute Maximum Ratings (Ta=25 )
1
Symbols Values Units
Reverse Voltage VR75 Volts
Peak reverse voltage VRM 100 Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at Tamb=25 and f 50Hz
IO150 1) mA
Surge forward current at t<1s and Tj=25 IFSM 500 mA
Power dissipation at Tamb=25 Ptot 500 1) mW
Junction Temperature Tj175
Storage temperature range TS-65 to +175
Characteristics at Tj=25
Symbols Min. Typ. Max. Units
Forward voltage at IF=10mA VF--1Volt
Leakage current
at VR=20V
at VR=75V
at VR=20V, Tj=150
IR
IR
IR
-
-
-
-
-
-
25
5
50
nA
uA
uA
Reverse breakdown voltage
tested wiht 100uA pulses V(BR)R 100 - - Volts
Capacitance
at VF=VR=0 Ctot --4 F
Voltage rise when switching ON
tested with 50mA forward pulses
tp=0.1uS, rise time<30nS, fp=5 to 100KHz
Vfr - - 2.5 Volts
Reverse recovery time
from IF=10mA to IR=1mA, VR=6V, RL=100 trr --4nS
Thermal resistance
junction to ambient Air RthA --0.35
1) K/mW
Rectification efficiency
at f=100MHz, VRF=2V V0.45 - - -
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Rectification efficiency measurement circuit
2
RATINGS AND CHARACTERISTIC CURVES
3
RATINGS AND CHARACTERISTIC CURVES
4
