MCMA265PD1600KB
preliminary
Phase leg
Thyristor \ Diode Module
3 1 2
5 4
Part number
MCMA265PD1600KB
Backside: isolated
TAV
T
V V1.15
RRM
260
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Y1
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
4800
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20170116cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.19
R0.16 K/W
min.
260
VV
300T = 25°C
VJ
T = °C
VJ
mA30V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
720 WT = 25°C
C
300
1600
forward voltage drop
total power dissipation
Conditions
Unit
1.46
T = 25°C
VJ
140
V
T0
V0.80T = °C
VJ
140
r
T
0.75 mΩ
V1.15T = °C
VJ
I = A
T
V
300
1.44
I = A600
I = A600
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA408
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
140
Wt = 60
P
P
GAV
W20
average gate power dissipation
C
J
366
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
8.50
9.18
261.0
253.4
kA
kA
kA
kA
7.23
7.81
361.3
350.6
1600
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
100repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
750 A
T
P
G
= 1
di /dt A/µs;
G
=1
DRM
cr
V = ⅔ V
DRM
GK
1000
2 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
3 V
220 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.25 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
200 mA
I
L
25t µs
p
= 30
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
150 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 1 di /dt A/µs
G
= 1
V = ½ V
D DRM
turn-off time
T = °C
VJ
200 µs
t
q
di/dt = A/µs10 dv/dt = V/µs50
V =
R
100 V; I A;
T
= 300 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 268 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.04
IXYS reserves the right to change limits, conditions and dimensions. 20170116cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Ratings
Part Number
yywwAA
Date Code
(DC)
Production
Index (PI)
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.#
(26-31),
blank (32), serial no.# (33-36)
Circuit
C
M
M
A
265
PD
1600
KB
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
Y1-CU
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm7
mounting torque
4.5
T
VJ
°C140
virtual junction temperature
-40
Weight g680
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm13
terminal torque
11
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
16.0
16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
600 A
per terminal
125-40
terminal to terminal
Y1
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA265PD1600KB 509202Box 3MCMA265PD1600KBStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.8
mΩ
V
0 max
R
0 max
slope resistance *
0.51
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
140 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20170116cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
2.8 x 0.8
10
2
49
45
43
1
2 3
7654
80
92
115
6.2
20 22.5 35 28.5
50
38
5
18
UL 758, style 3751
52
+0
-1,4
32 +0
-1,9
15 ±1
3x M8
3 1 2
5 4
Outlines Y1
IXYS reserves the right to change limits, conditions and dimensions. 20170116cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MCMA265PD1600KB
preliminary
Constants for Z
th
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0076 0.0054
2 0.0406 0.098
3 0.0944 0.54
4 0.0147 12
6
5
4
3
1
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
1
0
2
3: I
GT
, T
VJ
= -40°C
2: I
GT
, T4= 25°C
1: I
GT
,T
VJ
= 130°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
0.0 0.5 1.0 1.5 2.0
0
100
200
300
400
500
600
700
80
0
I
T
, I
F
[A]
V
T
, V
F
[A]
limit
typ.
0.01 0.10 1.00 10.00
0.1
1
10
10
0
T
VJ
= 25°C
I
G
[A]
t
gd
[µs]
V
G
[V]
I
G
[A]
I
GD
,T
VJ
= 130°C
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
DC
180°
120°
60°
30°
Z
thJC
[K/W]
T
VJ
= 125°C
T
VJ
= 25°C
Fig. 1 Forward voltage drop Fig. 2 Gate trigger delay time Fig. 3 Gate trigger
characteristics
Fig. 4 Transient thermal impedance junction to case (per thyristor/diode)
R
thJC
for various conduction angles d:
d R
thJC
(K/W)
DC 0.157
180° 0.168
120° 0.177
60° 0.200
30° 0.243
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20170116cData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
