October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 400 2N LFL (S042)
hermet ica lly se aled
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 250 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique
AMPAC™ package with internal input/output
matching structures.
PIN CONNECTION
BRANDING
81250M
OR DER COD E
MSC81250M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 80˚C) 60 0 W
ICDevice Current* 17 .8 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature (Pulsed RF Operation) 25 0 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W
*Applies only to rated RF amplifier operation
MSC81250M
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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