2N5551 Semiconductor NPN Silicon Transistor Descriptions * General purpose amplifier * High voltage application Features * High collector breakdown voltage : VCBO = 180V, VCEO = 160V * Low collector saturation voltage : VCE(sat)=0.5V(MAX.) * Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 TO-92 2N5551 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.200.1 1 2 3 KST-9041-000 1 2N5551 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics Characteristic (Ta=25C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100A, IE=0 180 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 160 - - V Emitter-Base breakdown voltage BVEBO IE=10A, IC=0 6 - - V Collector cut-off current ICBO VCB=120V, IE=0 - - 100 nA Emitter cut-off current IEBO VEB=4V, IC=0 - - 100 nA DC current gain hFE (1) VCE=5V, IC=1mA 80 - DC current gain hFE (2) VCE=5V, IC=10mA 80 - DC current gain hFE (3) 250 - VCE=5V, IC=50mA 30 - Collector-Emitter saturation voltage * VCE(sat)(1) IC=10mA, IB=1mA - - 0.2 V Collector-Emitter saturation voltage VCE(sat)(2)* IC=50mA, IB=5mA - - 0.5 V Base-Emitter saturation voltage * VBE(sat)(1) IC=10mA, IB=1mA - - 1 V Base-Emitter saturation voltage VBE(sat)(2)* IC=50mA, IB=5mA - - 1 V fT VCE=10V, IC=10mA 100 - 400 MHz - - 6 pF Transition frequency Collector output capacitance * Cob VCB=10V, IE=0, f=1MHz - : Pulse Tester : Pulse Width 300s, Duty Cycle 2.0% KST-9041-000 2 2N5551 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 fT - IC Fig. 2 IC - VBE Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-9041-000 3