TO -22 0A B BYQ28E-200E Dual ultrafast power diodes Rev. 4 -- 14 July 2011 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 1.2 Features and benefits Fast switching Low on-state losses Guaranteed ESD capability Low thermal resistance High thermal cycling performance Soft recovery minimizes power-consuming oscillations 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IO(AV) average output current IFRM repetitive peak forward current Conditions Min Typ Max Unit - - 200 V square-wave pulse; = 0.5 ; Tmb 119 C; both diodes conducting; see Figure 1; see Figure 2 - - 10 A = 0.5 ; tp = 25 s; Tmb 119 C; per diode; square-wave pulse - - 10 A IF = 5 A; Tj = 150 C; see Figure 4 - 0.8 0.89 V 5 IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; ramp recovery; see Figure 5 - 15 25 ns HBM; C = 250 pF; R = 1.5 k; all pins - - 8 kV Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Electrostatic discharge VESD electrostatic discharge voltage BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb K mounting base; cathode Graphic symbol mb A1 A2 K sym125 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number BYQ28E-200E BYQ28E-200E Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage DC - 200 V IO(AV) average output current square-wave pulse; = 0.5 ; Tmb 119 C; both diodes conducting; see Figure 1; see Figure 2 - 10 A IFRM repetitive peak forward current = 0.5 ; tp = 25 s; Tmb 119 C; per diode; square-wave pulse - 10 A IFSM non-repetitive peak forward current tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 C; per diode - 55 A tp = 10 ms; sine-wave pulse; Tj(init) = 25 C; per diode - 50 A IRRM repetitive peak reverse current = 0.001 ; tp = 2 s - 0.2 A IRSM non-repetitive peak reverse current tp = 100 s - 0.2 A Tstg storage temperature -40 150 C Tj junction temperature - 150 C - 8 kV Electrostatic discharge electrostatic discharge voltage VESD HBM; C = 250 pF; R = 1.5 k; all pins 001aag976 8 Ptot (W) 001aag977 6 =1 Ptot (W) a = 1.57 6 1.9 0.5 4 2.2 2.8 0.2 4 4.0 0.1 2 2 0 0 0 2 4 6 8 0 IF(AV) (A) Fig 1. Product data sheet 4 6 IF(AV) (A) Forward power dissipation as a function of average forward current; square waveform; maximum values BYQ28E-200E 2 Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; both diodes conducting - - 3 K/W with heatsink compound; per diode; see Figure 3 - - 4.5 K/W - 60 - K/W Rth(j-a) thermal resistance from junction to ambient 001aag979 10 Zth(j-mb) (K/W) 1 10-1 = P 10-2 tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width BYQ28E-200E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 5 A; Tj = 25 C; see Figure 4 - 0.95 1.1 V IF = 5 A; Tj = 150 C; see Figure 4 - 0.8 0.895 V IF = 10 A; Tj = 25 C; see Figure 4 - 1.1 1.25 V VR = 200 V; Tj = 25 C - 2 10 A VR = 200 V; Tj = 100 C - 0.1 0.2 mA Static characteristics forward voltage VF reverse current IR Dynamic characteristics Qr recovered charge IF = 2 A; VR 30 V; dIF/dt = 20 A/s; Tj = 25 C; see Figure 5 - 4 9 nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; ramp recovery; Tj = 25 C; see Figure 5 - 15 25 ns IF = 0.5 A; IR = 1 A; step recovery; Tj = 25 C; see Figure 6 - 10 20 ns IRM peak reverse recovery current IF = 2 A; VR 30 V; dIF/dt = 20 A/s; Tj = 25 C; see Figure 5 - 0.4 0.7 A VFR forward recovery voltage IF = 1 A; dIF/dt = 10 A/s; Tj = 25 C; see Figure 7 - 1 - V 001aag978 15 dlF IF dt IF (A) trr 10 (1) (2) (3) time 25 % 5 Qr IR 100 % IRM 003aac562 0 0 0.5 1.0 1.5 VF (V) Fig 4. Forward current as a function of forward voltage BYQ28E-200E Product data sheet Fig 5. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR VF 003aac563 time 001aab912 Fig 6. Reverse recovery definitions; step recovery BYQ28E-200E Product data sheet Fig 7. Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 Fig 8. REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Package outline SOT78 (TO-220AB) BYQ28E-200E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYQ28E-200E v.4 20110714 Product data sheet - BYQ28E_SERIES v.3 Modifications: * * Type number BYQ28E-200E separated from data sheet BYQ28E_SERIES v.3. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. * BYQ28E_SERIES v.3 BYQ28E-200E Product data sheet Legal texts have been adapted to the new company name where appropriate. 19981001 Product specification - All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 BYQ28E_SERIES v.2 (c) NXP B.V. 2011. All rights reserved. 8 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Preview -- The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYQ28E-200E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 14 July 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 11 BYQ28E-200E NXP Semiconductors Dual ultrafast power diodes 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 July 2011 Document identifier: BYQ28E-200E