MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Plastic Power Transistors ... designed for use in general-purpose amplifier and switching applications. e DC Current Gain Specified to 15 Amperes hFE = 20-150 @ Ic = 5.0 Ade = 5.0 (Min) @ Ico = 15 Ade Collector-Emitter Sustaining Voltage VGEO(sus) = 60 Vde (Min) - 2N6487, 2N6490 + = 80 Vde (Min) 2N6488, 2N6491 High Current Gain Bandwidth Product f7 = 5.0 MHz (Min) @ Ic = 1.0 Adc e TO~220AB Compact Package MAXIMUM RATINGS (1) 2N6487 2N6488 Rating Symbol 2N6490 2N6491 Unit Collector-Emitter Voltage VCEO 60 80 Vde Collector-Base Voltage Vos 70 90 Vde Emitter-Base Voltage VeB 5.0 Vde Collector Current Gontinuous lo 15 Ade Base Current IB 5.0 Adc Total Power Dissipation @ Tc = 25C Pp 75 Waits Derate above 25C 0.6 WIC Total Power Dissipation @ Ta = 25C Pp 1.8 Waits Derate above 25C 0.014 WIPG Operating and Storage Junction TJ, Tstg ~65 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Therma! Resistance, Junction to Case ReJc 1.67 CAN Thermal Resistance, Junction to Ambient RoJA 70 CW (1) Indicates JEDEC Registered Data. Ta To 40 3.0 2.0 1.0 Pp, POWER DISSIPATION (WATTS) 0 20 40 60 80 100 {20 Tc, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 140 160 NPN 2N6487 2N6488* PNP 2N6490 2N6491* Motorola Preferred Davice 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75 WATTS CASE 221A-06 TO-220AB 3-132 Motorola Bipolar Power Transistor Device Data2N6487 2N6488 2N6490 2N6491 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic | Symbol Min | Max | Unit OFF CHARACTERISTICS. CollectorEmitter Sustaining Voltage (1) _ VGEO(sus) Vide (Ig = 200 mAdc, IB = 0) 2N6487, 2N6490 60 2N6488, 2N6491 80 CollectorEmitter Sustaining Voltage (1) VCEX Vde {Io = 200 mAdc, Vpg = 1.5 Vdc) _ - 2N6487, 2N6490 70 _ 2N6488, 2N6491 90 Collector Cutoff Current : on , ICEO mAdc (Vcr = 30 Vac, Ip = 0} 2N6487, 2N6490 _ i (VCE = 40 Vde, Ip = 0) 2N6488, 2N6491 _ 1 Collector Cutoff Current . IGEX pAdc (VE = 65 Vde, VEB(off = 1.5 de) 2N6487, 2N6490 _ 500 (VcE = 85 Vie, VEB(off) = 1.5 Vde) . ~2N6488, 2N6491 _ 500 (GCE = 60 Vde, VEB(off = 1.5 Vde, To = 150C) 2N6487, 2N6490 5.0 (VCE = 80 Vde, VEB(off = 1.5 Vde, Tg = 150C) 2N6488, 2N6491 5.0 Emitter Cutoff Current lEBO _ 1.0 mAdo (VBE = 5.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain . OT - hrFe _ (ig = 5.0 Adc, VoE = 4.0 Vdo) 20 150 (ig = 15 Ade, Vcg = 4.0 Vde) _ 5.0 _ Collector-Emitter Saturation Voltage VCE(sat) Vde (Ig = 5.0 Ade, Ig = 0.5 Adc) 1.3 (Iq = 15 Ade, Ip = 5.0 Ade) 3.5 Base-Emitter On Voltage - VBE(on) Vde (Ig = 5.0 Ade, Vcg = 4.0 Vde) _ 1.3 (Ig = 15 Ade, VcE = 4.0 Vde) _ 3.5 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (2) it 5.0 _ MHz (Ig = 1.0 Ade, Vog = 4.0 Vde, fiest = 1.0 MHz) Small-Signal Current Gain hfe 25 -_ _ (Io = 1.0 Adc, VCE = 4.0 Ve, f = 1.0 kHz) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 ys, Duty Cycle = 2.0%, (2) fT = lhfel ftast- Voc +80V 1006 +10V SCOPE - p-tL __ 200 _ || i _ we 400 10 z= tr ty = 10ns el. 50 DUTY CYCLE = 1.0% -4V Rg AND Rg VARIED TO OBTAIN DESIRED CURRENT LEVELS. ; To = 25C FOR PNP, REVERSE ALL POLARITIES, 207 Vog=30V Dj MUST BE FAST RECOVERY TYPE, e.g. io LC= 1 1N5625 USED ABOVE Ip = 100 mA _ 02. #405 8610 | 20 5.0 10-20 MSD6100 USED BELOW Ip ~ 100 mA Ic, COLLECTOR CURRENT (AMP) Figure 2. Switching Time Test Circult Figure 3. TurnOn Time Motorola Bipolar Power Transistor Device Data 3-1332N6487 2NG6488 2N64S0 2N6491 1.0 0.7 0.5 0.3 02 DOS 02 0.1 0.1 0.07 0,05 0.03 0.02 0.05 0.02 0.01 nt), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ZaJc () = tt) Rec Rec = 1.87CW MAX - DCURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT ty Tuto) ~ TC = Pooky ZaJc(t) Oh OT 0.02 0.05 . 0.1 0.2 05 10 20 5.0 = 10 20 50 100 = 200 500 1.0k t, TIME (ms) Figure 4. Thermal Response 20 . a oo. See 7 OTS q There are two limitations on the power handling ability of a g 1 ~ Sh 100 HS transistors average Junction temperature and second break- = 50 x x 500 ps down. Safe operating area curves indicate Ic -VcE limits of = . Pe 4, \ tt the transistor that must be observed for reliable operation; ee Pn N 1.Oms i.e., the transistor must not be subjected to greater dissipa- a 2.0]- T= 180C i tion than the curves indicate. | iz The data of Figure 5 is based on TJ(pk) = 150C; Te is p 10 } BONING RES Ua AATED \ 5.0 ms variable depending on conditions. Second breakdown pulse : 05k "> THERMALLY LIMITED @ To = 25C ... jimits are valid for duty cycles to 10% provided TJ(pk) 5 CURVES APPLY BELOW RATED Veco | = 150C. Ty (pk) may be calculated from the data in Figure 4. oo y ORO te At high case temperatures, thermal limitations will reduce the Nate NEES power that can be handled to values less than the limitations 0.1 1 {| imposed by second breakdown 2.0 4.0 10 20 40 60 80 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area 5000 T 1000 700 1000 & z ka 300 2 500 200 - & <x 200 io} Vc = 30 V. S 499 Ioilp = 10 100 Ipi = |p2 70 = PNP Ty = 25C _ Ty = 25C 50 60 0.2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 2.0 5.0 10 20 50 Ig, COLLECTOR CURRENT (AMP} Vp, REVERSE VOLTAGE (VOLTS) Figure 6. TurnOff Time Figure 7. Capacitances 3-134 Motorola Bipolar Power Transistor Device DataNPN 2N6487, 2N6488 500 Ty = 160C 200 25C =z S 109 5 -55C & 50 Oo 8 wi 20 10 Voge =2.0V 5.0 02 05 610 20 5.0 Iq, COLLECTOR CURRENT (AMP) Vg, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 60 100 Ip, BASE CURRENT (mA) 200 500 1000 10 20 Figure 8. DC Ty=25C 2000 5000 2N6487 2N6488 2N6490 2NG6491 PNP 2N6490, 2N6491 500 200 100 50 hr, DC CURRENT GAIN 20 10 VoE = 2.0V 5.0 0.2 0.5 1.0 2.0 5.0 Io, COLLECTOR CURRENT (AMP) i0 20 Current Gain 2.0 18 16 14 L2 1.0 0.8 0.6 0.4 0.2 %o Ty =25C Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 50 100 Ip, BASE CURRENT (mA) 200 600 1000 2000 8000 Figure 9, Collector Saturation Region 28 24 a E 20 z : 1.6 3 2 g 12 > 10 > @ Iollg = 10 0.8 #2.0V 04 @ =2,0V @ = 10 @ = 10 0 0 0.2 0.5 1.0 20 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 Ic, COLLECTOR CURRENT (AMP) Ig, GOLLECTOR GURRENT (AMP) Figure 10. On Voltages Motorola Bipolar Power Transistor Device Data 8-135MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage NPN Silicon Power Transistors ... designed for high voltage inverters, switching regulators and line-operated amplifier applications. Especially well suited for switching power supply applications. * High Collector-Emitter Sustaining Voltage . VCEO(sus) = 250 Vde (Min) 2N6497 = 300 Vde (Min) 2N6498 e Excellent DC Current Gain heg = 10-75 @ Iq = 2.5 Ade * Low Collector-Emitter Saturation Voltage @ Ic = 2.5 Ade VCE(sat) = 1.0 Vde (Max) 2N6497 = 1.25 Vde (Max) 2N6498 2N6497 2N6498* *Motorofa Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS CASE 2214-06 TO-220AB MAXIMUM RATINGS (1) Rating Symbol 2N6497 2N6498 Unit CollectorEmitter Voltage VCEO 250 300 Vde Collector-Base Voliage VcB 350 400 Vde Emitter-Base Voltage VEB 6.0 6.0 Vde Collector Current Continuous Io 5.0 5.0 Adc Peak 10 10 Base Current IB 2.0 2.0 Adc Total Power Dissipation @ To = 25C Pp 80 80 Watts Derate above 25C 0.64 0.64 Wrc Operating and Storage Junction Temperature Range Tg Tsig ~65 to +150 65 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Unit Thermal Resistance, Junction to Case Rac "COW (1) Indicates JEDEC Registered Data, Preferred davices are Motorola recommended chcices for future use and best overall value. REV 7 3-136 Motorola Bipolar Power Transistor Device Data2N6497 2N6498 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise notec) | Characteristic | Symbol | Min | Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (Ig = 25 mAde, Ip = 0) 2N6497 2N6498 VCEOfsus) Vde 250 _ _ 300 _ - Collector Cutoff Current (VCE = 350 Vde, VBE(off = 1.5 Vde) 2N6497 (VCE = 400 Vde, VBE(off = 1.5 Vde) 2N6498 (VGE = 175 Vde, VBE(off) = 1.5 Vde, Tg = 100C) 2N6497 (VGE = 200 Vde, VBE (off) = 1.5 Vde, To = 100C) 2N6498 IcEX mAdc Emitter Cutoff Current (VBE = 6.0 Vde, Ic = 0) IEBO - _ 1.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (Ig = 2.5 Ade, VGE = 10 Vde} (Ig = 5.0 Ade, VoE = 10 Vde} hre 10 _ 75 3.0 _ _ Collector-Emitter Saturation Voltage (Io = 2.5 Ade, Ip = 500 mAdc) 2N6497 2N6498 (Ic = 5.0 Ade, Ip = 2.0 Adc) All Devices VoE(sat) Vde _- 1.25 _ _ 5.0 Base-Emitier Saturation Voltage (I = 2.5 Ade, Ip = 500 mAdc) (Ic = 5.0 Ade, Ig = 2.0 Adc) VBE(sat) Vde DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (Ic = 250 mAde, VE = 10 Vde, f = 1.0 MHz) fT 5.0 MHz Output Capacitance (Vcpg = 10 Vde, Ie = 0, f= 100 kHz) Cob _ 150 pF SWITCHING CHARACTERISTICS Rise Time (Voc = 125 Vde, Ig = 2.5 Ade, Igy = 0.5 Ade) Storage Time Voc = 125 Vde, Ic = 2.5 Ade, Vag = 5.0 Vde, Igy = Ipo = 0.6 Ado) Fall Time (Voc = 125 Vdc, Ig = 2.5 Ade, Ip1 = ipo = 0.5 Adc) tt - | 045 1.0 us * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%. Voc +128V +TV SCOPE ne -9.0V | ty tf = 10ns os DUTY CYCLE = 1.0% -5.0V Rg AND Rg VARIED TO OBTAIN DESIRED CURRENT LEVELS Dy MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE Ip ~ 100 mA MSD6100 USED BELOW Ip = 100 mA TIME (ps) Figure 1. Switching Time Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 td @ Vee (off = 5.0V 0.02 005 007 04 02 03 0507 10 20 30 50 Ig, COLLECTOR CURRENT (AMP) Figure 2. TurnOn Time Motorola Bipolar Power Transistor Device Data 3-1372N6497 2N6498 1.0 0.7 0.5 0.3 0.2 Q.1 0.07 0.05 0.03 002 Doi SINGLE PULSE 1) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 00h Oi 0.02 0.03 0.05 0.1 0.2 03 05 1.0 t, TIME OR PULSE WIDTH (ms) 2.0 3.0 5.0 10 20 30 50 100 Pook} , Resc(max) = 1.56C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN ~ a SINGLE READ TIME AT ty : 2 PULSE Tyiok) -To= Pop) ReJcit) DUTY CYCLE, D = ty/ta 200 300 500 1000 Figure 3, Thermal Response 20 10 5.0 20 de 5,0 ms 1.0 0.5 0.2 - THERMAL LIMIT (SINGLE 0.1 SECOND BREAKDOWN LIMIT 0.05 | CURVES APPLY BELOW RATED VoEQ : To = 25C Ic, COLLECTOR CURRENT (AMP) 02 5.0 7.0 10 20 30 50 70 100 200 300 500 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Active-Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves Indicate Ic VcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. _ The data of Figure 4 is based on Tc = 25C; TJipky is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) = 150C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handied to values less than the limitations imposed by second breakdown. Second breakdown Iimita- tions do not derate the same as thermal limitations. Allow- able current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. 10 100 7.0 5.0 E a SECOND BREAKDOWN DERATING 3.0 % = 20 5 a c= 60 2 io g = Ee > 07 = THERMAL DERATING 05 wi 40 f a 0.3 g 02 5 20 0.4 0 0.05 0.07 0.1 02 03 0507 10 .20 30 5.0 Ig, COLLECTOR CURRENT (AMP) To, CASE TEMPERATURE (C) Figure 5. Turn-Off Time Figure 6. Power Derating 3-138 Motorola Bipolar Power Transistor Device Data2N6497 2N6498 100 hr, DC CURRENT GAIN V, VOLTAGE (VOLTS) Ig, COLLECTOR CURRENT (A) a J Ty 25C 0 VoE= 10V g J ~ thd 60 3 8 30 fi 20 10 3 7.0 o 5.0 0 0.05 0.07 6.1 02 03 0507 10 20 30 50 0.01 002 0.05 Of O02 O58 10 20 80 10 Ic, COLLECTOR CURRENT (AMP) Ip, BASE CURRENT (mA) Figure 7. DG Current Gain Figure 8. Collector Saturation Region 1.4 +40 2 hee @ Voz = 10V 12 = 43.0} APPLIES FOR Iola = EG Noe = ON 1.0 @lollp 5.0 a +20 08 i +10 25G to 150C VBE @ Voce = 10 V w 0 08 5 55C to 25C tact t 0.4 e@ -1.0 25C to 150C & for 0.2 @Iolig=5.0 fb -20 Iofig = 2.5 2 55 to 25C 0 - 0.05 0.07 0.1 02 03 05 O07 1.0 20 3.0 50 $4.05 007 01 02 03 05 07 1,0 20 30 50 Ic, COLLECTOR CURRENT (AMP) Ip, COLLECTOR CURRENT (AMP) Figure 9. On Voltages Figure 10. Temperature Coefficients 104 1000 VcE = 200 V 700 103 500 300 Ty = 150C 10 ! - S oo tol TZ Z 100 z 70 400 - So 50 o 30 Cob ir 20 10-2 19) -0.1 -0.2 0 +02 +04 +06 406 10 20 4060 10 20 40 60 100 200 400 Vee, BASE-EMITTER VOLTAGE (VOLTS) Vp, REVERSE VOLTAGE (VOLTS) Figure 11. Collector Cutoff Region Figure 12. Capacitance Motorola Bipolar Power Transistor Device Data 3-139