Document Number: 94313 For technical questions, contact: diodestech@vishay,com www.vishay.com
Revision: 08-Jul-09 1
Schottky Rectifier, 3.0 A
MBRD3..PbF Series
Vishay High Power Products
FEATURES
Popular D-PAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
DESCRIPTION
The MBRD320PbF, MBRD330PbF, MBRD340PbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
IF(AV) 3.0 A
VR20 to 40 V
D-PAK Anode
13
Base
cathode
Anode
4, 2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 20 to 40 V
IFSM tp = 5 µs sine 490 A
VF3 Apk, TJ = 125 °C 0.49 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL MBRD320PbF MBRD330PbF MBRD340PbF UNITS
Maximum DC reverse voltage VR20 30 40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 133 °C, rectangular waveform 3.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
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2Revision: 08-Jul-09
MBRD3..PbF Series
Vishay High Power Products Schottky Rectifier, 3.0 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.48 0.6
V
6 A 0.58 0.7
3 A TJ = 125 °C 0.41 0.49
6 A 0.55 0.625
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.02 0.2 mA
TJ = 125 °C 10.7 20
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 - pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 5.0 - nH
Maximum voltage rate of change dV/dt Rated VR- 10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ (1) - 40 to 150 °C
Maximum storage temperature range TStg - 40 to 175
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 6.0
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA)
MBRD320
MBRD330
MBRD340
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94313 For technical questions, contact: diodestech@vishay,com www.vishay.com
Revision: 08-Jul-09 3
MBRD3..PbF Series
Schottky Rectifier, 3.0 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
0.1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.81.2
0.6 1.0
0
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 4025 30 350
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10515202535404530
0
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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4Revision: 08-Jul-09
MBRD3..PbF Series
Vishay High Power Products Schottky Rectifier, 3.0 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
110
120
130
140
160
150
Allowable
C
ase Temperature
(
°
C)
IF
(
AV
)
- Average Forward Current (A)
21 345
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.5
2.5
2.0
1.0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
2
13
45
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Document Number: 94313 For technical questions, contact: diodestech@vishay,com www.vishay.com
Revision: 08-Jul-09 5
MBRD3..PbF Series
Schottky Rectifier, 3.0 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Schottky MBR series
2- D = TO-252AA (D-PAK)
3- Current rating (3 = 3 A)
4- Voltage ratings
20 = 20 V
30 = 30 V
40 = 40 V
5- None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
6
Device code
51324
6
MBR D 3 40 TR PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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therein, which apply to these products.
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