ECH8501 Ordering number : ENA1581A SANYO Semiconductors DATA SHEET ECH8501 PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Features * * * * Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--30)40 V (--)30 V (--)6 V (--)5 A Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current PW1s, duty cycle1% (--)30 A (--)600 mA When mounted on ceramic substrate (900mm2x0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2x0.8mm) 1.6 W 150 C --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) 7011A-007 * Package : ECH8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8501-TL-H Packing Type : TL 0.25 2.9 0.15 8 5 MA 2.3 LOT No. TL 4 1 0.65 Electrical Connection 0.3 0.9 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collector(NPN TR) 8 : Collector(NPN TR) 0.07 2.8 0 t o 0.02 0.25 Marking Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 52312 TKIM/72110EA TKIM TC-00002441 No. A1581-1/8 ECH8501 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(--)125mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ 200 Unit max (--)0.1 A (--)0.1 A 560 (260)280 MHz (49)32 IC=(--)2.5A, IB=(--)125mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= pF (--100)75 (--170)110 (--)0.85 (--)1.2 (--30)40 V(BR)EBO ton IE=(--)10A, IC=0A tstg tf See specified Test Circuit. mV V V (--)30 V (--)6 V (37)30 ns (147)220 ns (14)12 ns Note : The specifications shown above are for each individual transistor. Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT Vout IB2 VR RB 50 RL + + 100F 470F VBE= --5V VCC=12V IC=20IB1= --20IB2=2.5A (For PNP, the polarity is reversed.) Ordering Information Device ECH8501-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1581-2/8 ECH8501 --3.0 --10mA --8mA --6mA --2.5 --2.0 --1.5 --4mA --1.0 --2mA --0.5 IB=0mA --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V IC -- VBE 3.5 A 30m 20m A m 40 10mA 3.0 2.5 8mA 2.0 6mA 1.5 4mA 1.0 2mA IB=0mA 0 0 --0.5 0.1 0.2 0.3 0.5 0.4 Collector-to-Emitter Voltage, VCE -- V IT15618 [PNP] IC -- VBE 5 VCE= --2V IT15619 [NPN] VCE=2V 4 --1 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1 0 --1.2 --25C 2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V IT15620 hFE -- IC 1000 3 25C 25C --2 --25C --3 Ta=75 C Collector Current, IC -- A --4 Ta=75 C Collector Current, IC -- A --5 [PNP] VCE= --0.5V 1.2 IT15621 hFE -- IC 1000 7 [NPN] VCE=0.5V 7 DC Current Gain, hFE Ta=75C 5 DC Current Gain, hFE 4.0 A [NPN] 0.5 0 0 0 70m A 50m A --3.5 --20mA 4.5 Collector Current, IC -- A mA --70 mA --4.0 A --30m A m --40 IC -- VCE 5.0 mA mA 0 --5 --1 00 Collector Current, IC -- A --4.5 [PNP] 100 IC -- VCE --5.0 25C 3 --25C 2 5 Ta=75C 25C 3 --25C 2 100 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A hFE -- IC 1000 7 0.01 5 7 --10 IT15622 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A [PNP] hFE -- IC 1000 VCE= --2V 7 5 7 10 IT15623 [NPN] VCE=2V 7 Ta=75C 5 DC Current Gain, hFE DC Current Gain, hFE 2 25C 3 --25C 2 5 Ta=75C 25C 3 --25C 2 100 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT15624 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT15625 No. A1581-3/8 ECH8501 VCE(sat) -- IC [PNP] 2 --100 7 5 C 75 3 = Ta 2 C 5 --2 C 25 --10 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 VCE(sat) -- IC [PNP] Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 C 5 =7 Ta 3 2 C 5 --2 C 25 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC [PNP] = Ta 2 C 25 10 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15679 Collector Current, IC -- A VCE(sat) -- IC [NPN] IC / IB=50 2 100 7 5 C 75 C 5 --2 = Ta 3 2 C 25 2 --1.0 Ta= --25C 7 25C 5 75C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Output Capacitance, Cob -- pF 7 5 3 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT15632 2 3 5 7 1.0 2 3 5 7 10 IT15680 VBE(sat) -- IC [NPN] IC / IB=20 1.0 Ta= --25C 7 25C 5 75C 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15631 Cob -- VCB 100 f=1MHz 100 5 7 0.1 Collector Current, IC -- A [PNP] 2 3 2 2 0.01 5 7 --10 IT15630 Cob -- VCB 3 2 3 IC / IB=20 Collector Current, IC -- A Output Capacitance, Cob -- pF C 75 C 5 --2 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 --1.0 5 7 0.01 5 7 --10 IT15628 Collector Current, IC -- A 2 --0.01 7 10 --10 7 --0.01 100 3 IC / IB=50 [NPN] IC / IB=20 2 3 0.01 5 7 --10 IT15678 Collector Current, IC -- A 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 VCE(sat) -- IC 3 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 [NPN] f=1MHz 7 5 3 2 10 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT15633 No. A1581-4/8 ECH8501 f T -- IC 3 2 100 7 5 3 7 5 3 2 3 5 7 --0.1 3 5 7 --1.0 2 3 Collector Current, IC -- A ASO 5 3 2 100 7 5 3 2 3 5 7 0.1 DC 10 ms 0m s s IC=5A 1m s op era tio n Ta=25C Single pulse For PNP, minus sign is omitted. 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 3 5 7 1.0 2 PC -- Ta 1.8 3 5 7 10 IT15635 [PNP/NPN] When mounted on ceramic substrate (900mm2x0.8mm) 1.6 10 2 Collector Current, IC -- A 1s 100s [NPN] VCE=10V 2 0.01 5 7 --10 IT15634 [PNP/NPN] ICP=30A 1.0 7 5 3 2 0.1 7 5 3 2 2 0 50 10 7 5 3 2 2 fT -- IC 7 Gain-Bandwidth Product, fT -- MHz 5 2 --0.01 Collector Current, IC -- A [PNP] VCE= --10V Collector Dissipation, PC -- W Gain-Bandwidth Product, f T -- MHz 7 1.4 1.3 1.2 To t al 1.0 Di ss ip nit atio 1u 0.8 n 0.6 0.4 0.2 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 5 IT15636 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT15457 No. A1581-5/8 ECH8501 Embossed Taping Specification ECH8501-TL-H No. A1581-6/8 ECH8501 Outline Drawing ECH8501-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1581-7/8 ECH8501 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A1581-8/8