ECH8501
No. A1581-1/8
52312 TKIM/72110EA TKIM TC-00002441
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Ordering number : ENA1581A
Features
• Composite type, facilitating high-density mounting • Mounting height 0.9mm
• Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A
PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A
• Halogen free compliance
Specifi cations ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--30)40 V
Collector-to-Emitter Voltage VCEO (--)30 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)5 A
Collector Current (Pulse) ICP PW≤1μs, duty cycle≤1% (--)30 A
Base Current IB(--)600 mA
Collector Dissipation PC
When mounted on ceramic substrate (900mm
2
×0.8mm) 1unit
1.3 W
Total Dissipation PT
When mounted on ceramic substrate (900mm
2
×0.8mm)
1.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7011A-007
ECH8501
PNP/NPN Epitaxial Planar Silicon Transistors
Gate Drive Applications
Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
8765
1234
MA
LOT No.
1 : Emitter(NPN TR)
2 : Base(NPN TR)
3 : Emitter(PNP TR)
4 : Base(PNP TR)
5 : Collector(PNP TR)
6 : Collector(PNP TR)
7 : Collector(NPN TR)
8 : Collector(NPN TR)
SANYO : ECH8
14
85
0.15
0 to 0.02
0.25
0.25 2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
TL
ECH8501-TL-H
ECH8501
No. A1581-2/8
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)0.1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA
DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)500mA (260)280 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (49)32 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2.5A, IB=(--)125mA (--100)75
(--170)110
mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2.5A, IB=(--)125mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--30)40 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-On Time ton See specifi ed Test Circuit. (37)30 ns
Storage Time tstg (147)220 ns
Fall Time tf(14)12 ns
Note : The specifi cations shown above are for each individual transistor.
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ECH8501-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free
VRRB
VCC=12VVBE= --5V
++
50Ω
INPUT
Vout
RL
100μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=2.5A
(For PNP, the polarity is reversed.)
ECH8501
No. A1581-3/8
0
0
--1.0
--0.5
IC -- VCE
IT15618
--3.0
--2.0
--4.0
--5.0
--2.5
--1.5
--3.5
--4.5
--0.1 --0.3--0.2 --0.4 --0.5
IB=0mA
--2mA
--4mA
--6mA
--8mA
--10mA
--40mA
--50mA
--100mA
--70mA
--30mA
--20mA
[PNP] IC -- VCE
IT15619
[NPN]
0
0
1.0
0.5
3.0
2.0
4.0
5.0
2.5
1.5
3.5
4.5
0.1 0.30.2 0.4 0.5
IB=0mA
2mA
4mA
6mA
8mA
10mA
40mA
100mA
70mA
30mA
20mA
50mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IT15622
100
--0.01 2357--0.1 23572357
--1.0 --10 0.01 23570.1 23572357
1.0 10
0.01 23570.1 23572357
1.0 10
2
3
5
1000
7
5
7
100
--0.01 2357--0.1 23572357
--1.0 --10
2
3
5
1000
7
7100
2
3
5
1000
7
100
2
3
5
1000
7
7
VCE= --0.5V
Ta=75°C
25°C
--2 5 °C
[PNP]
IT15624
VCE= --2V
Ta=75°C
25°C
--25
°
C
[PNP]
IT15623
Ta=75°C
--25
°
C
25°C
Ta=75°C
--25°C
25°C
VCE=0.5V
[NPN]
IT15625
VCE=2V
[NPN]
IT15620
VCE= --2V
[PNP]
0
2
5
4
3
1
0 0.2 0.4 0.6 0.8 1.21.0
IT15621
Ta=75°C
--25°C
25°C
0
--2
--5
--4
--3
--1
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Ta=75°C
--25°C
25°C
VCE=2V
[NPN]
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ECH8501
No. A1581-4/8
IT15678
--0.01 23 57
--0.1 23 57 23 57
--1.0 --10
--100
2
3
2
3
5
7
3
5
7
--10
0.01 23 57
0.1 23 57 23 57
1.0 10
100
2
3
2
3
5
7
3
5
7
10
Ta=75°C
--25°C
25
°
C
IC / IB=20
Ta=75
°
C
--2 5 °C
25
°
C
[PNP]
IT15679
IC / IB=20
[NPN]
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
IT15628
Ta=75°C
--25°C
25
°
C
IC / IB=50
[PNP]
IT15680
IC / IB=50
[NPN]
IT15632
--1.0
100
--10
2357235
2
3
2
3
5
7
f=1MHz
[PNP]
IT15633
2
100
10
7
3
5
1.0 10
23 5 23 57
f=1MHz
[NPN]
IT15630
Ta= --25°C
75°C
25
°
C
IC / IB=20
[PNP]
IT15631
1.0
3
2
3
2
5
7
IC / IB=20
75°C
Ta= --25°C
25°C
[NPN]
--0.01 23 57
--0.1 23 57 23 57
--1.0 --10
--100
2
3
5
7
2
3
5
7
7
--10
0.01 23 57
0.1 2 3 57 2 3 57
1.0 10
0.01 23 57
0.1 23 57 23 57
1.0 10
--1.0
3
2
3
2
5
7
--0.01 23 57
--0.1 23 57 23 57
--1.0 --10
100
2
3
2
3
5
7
7
10
Ta=75
°
C
--2 5 °C
25
°
C
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
ECH8501
No. A1581-5/8
IT15634
--0.01 2 3 57 2 3 57 2 3 57
--0.1 --1.0 --10
100
5
7
2
3
5
7
2
3
0.01 23 57 23 57 23 57
0.1 1.0 10
100
5
7
2
3
5
7
2
3
VCE= --10V
[PNP]
IT15635
VCE=10V
[NPN]
fT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
[PNP/NPN][PNP/NPN]
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.01 23 5723 5723 57 23 5
0.01 0.1 1.0 10
IT15636
500μs
1ms
10ms
100ms
DC operation
ICP=30A
IC=5A
≤1μs
100μs
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
Ta=25
°
C
Single pulse
For PNP, minus sign is omitted.
Collector Dissipation, PC -- W
PC -- Ta
Ambient Temperature, Ta -- °C
0
1.8
1.6
1.0
1.2
1.4
1.3
0.8
0.6
0.4
0.2
2006040 80 100 140120 160
IT15457
Total Dissipation
1unit
When mounted on ceramic substrate
(900mm
2
×
0.8mm)
ECH8501
No. A1581-6/8
Embossed Taping Specifi cation
ECH8501-TL-H
ECH8501
No. A1581-7/8
Outline Drawing Land Pattern Example
ECH8501-TL-H
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.4
0.6
2.8
0.65
ECH8501
PS No. A1581-8/8
This catalog provides information as of May, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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