PD- 90549E IRF9130 JANTX2N6804 JANTXV2N68064 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET (R)TRANSISTORS THRU-HOLE (TO-204AA) REF: MIL-PRF-19500/562 Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V -11A TO-3 (TO-204AA) Features Description HEXFET(R) MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter Symbol Value ID1 @ VGS = -10V, TC = 25C Continuous Drain Current -11 ID2 @ VGS = -10V, TC = 100C Continuous Drain Current -7.0 Units A IDM @TC = 25C Pulsed Drain Current -44 PD @TC = 25C Maximum Power Dissipation 75 W Linear Derating Factor 0.60 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 207 mJ IAR Avalanche Current -11 A EAR Repetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery -5.5 V/ns TJ Operating Junction and TSTG -55 to + 150 Storage Temperature Range Lead Temperature C 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (Typical) g For footnotes refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ RDS(on) Min. Drain-to-Source Breakdown Voltage -100 Breakdown Voltage Temp. Coefficient --- Typ. Max. Units --- --- -0.087 --- QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- -2.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.30 0.36 -4.0 -25 -250 -100 100 29 7.1 21 60 140 140 140 Ls +LD Total Inductance --- 6.1 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 860 350 125 --- --- --- Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Zero Gate Voltage Drain Current IGSS V Test Conditions VGS = 0V, ID = -1.0mA V/C Reference to 25C, ID = -1.0mA VGS = -10V, ID2 = -7.0A VGS = -10V, ID1 = -11A V VDS = VGS, ID = -250A VDS = -80V, VGS = 0V A VDS = -80V,VGS = 0V,TJ =125C VGS = -20V nA VGS = 20V ID1 = -11A nC VDS = -50V VGS = -10V VDD = -50V ID1 = -11A ns RG = 7.5 VGS = -10V Measured from Drain lead (6mm / 0.25 in from package) to Source nH lead (6mm/ 0.25 in from package) VGS = 0V pF VDS = -25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units --- --- --- --- --- -11 -44 -4.7 250 3.0 Test Conditions IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A V ns C TJ = 25C,IS= -11A, VGS = 0V TJ = 25C,IF = -11A,VDD 50V di/dt = -100A/s Thermal Resistance Min. Typ. Max. RJC Symbol Junction-to-Case Parameter --- --- 1.67 RJA Junction-to-Ambient (Typical socket mount) --- --- 30 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L= 3.4mH, Peak IL = -11A,VGS = -10V. ISD -11A, di/dt -140A/s, VDD -100V, TJ 150C. Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Case Outline and Dimensions - TO-204AA (Modified TO-3) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. 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