MTP12P10 Preferred Device Power MOSFET 12 Amps, 100 Volts P-Channel TO-220 This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. * Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100C * Designer's Data - IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature * Rugged - SOA is Power Dissipation Limited * Source-to-Drain Diode Characterized for Use With Inductive Loads http://onsemi.com 12 AMPERES 100 VOLTS RDS(on) = 300 m P-Channel D MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 100 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) VGS VGSM 20 40 Vdc Vpk Drain Current - Continuous Drain Current - Pulsed ID IDM 12 28 Adc Total Power Dissipation Derate above 25C PD 75 0.6 Watts W/C TJ, Tstg -65 to 150 C Operating and Storage Temperature Range Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds G S MARKING DIAGRAM & PIN ASSIGNMENT TO-220AB CASE 221A STYLE 5 C/W RJC RJA 1.67 62.5 TL 260 C 4 Drain 4 1 2 MTP12P10 LLYWW 1 Gate 3 3 Source 2 Drain MTP12P10 LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device MTP12P10 Package Shipping TO-220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 - Rev. 2 1 Publication Order Number: MTP12P10/D MTP12P10 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 100 - Vdc - - 10 100 OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0) (VDS = Rated VDSS, VGS = 0, TJ = 125C) Adc IDSS Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - 100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) TJ = 100C VGS(th) 2.0 1.5 4.5 4.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 6.0 Adc) RDS(on) - 0.3 Ohm Drain-Source On-Voltage (VGS = 10 V) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 100C) VDS(on) - - 4.2 3.8 gFS 2.0 - mhos Ciss - 920 pF Coss - 575 Crss - 200 td(on) - 50 tr - 150 td(off) - 150 tf - 150 Qg 33 (Typ) 50 ON CHARACTERISTICS (Note 1.) Forward Transconductance (VDS = 15 V, ID = 6.0 A) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) S Fi See Figure 10 SWITCHING CHARACTERISTICS (Note 1.) (TJ = 100C) Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 25 V, ID = 0.5 Rated ID, RG = 50 ) See Figures 12 and 13 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 0.8 Rated VDSS, ID = Rated ID, VGS = 10 V) S Fi See Figure 11 Qgs 16 (Typ) - Qgd 17 (Typ) - VSD 4.0 (Typ) 5.5 ns nC SOURCE-DRAIN DIODE CHARACTERISTICS (Note 1.) Forward On-Voltage Forward Turn-On Time (IS = Rated R t d ID, VGS = 0) ton Reverse Recovery Time Vdc Limited by stray inductance trr 300 (Typ) - ns Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Ld 5.0 (Typ) - nH Internal Source Inductance (Measured from the source pin, 0.25 from the package to the source bond pad) Ls 12.5 (Typ) - 3.5 (Typ) 4.5 (Typ) - - 7.5 (Typ) - INTERNAL PACKAGE INDUCTANCE (TO-204) INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Ld Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) Ls 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 2 nH MTP12P10 20 VGS = -20 V -I D, DRAIN CURRENT (AMPS) 18 16 10 V TJ = 25C 8V 14 12 7V 10 8 6V 6 4 5V 2 0 VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS 0 1 2 3 4 5 6 7 8 9 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 1.2 1 0.9 0.8 -50 I D, DRAIN CURRENT (AMPS) 25C 16 TJ = -55C 100C 12 8 VDS = 20 V 4 0 0 4 8 12 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 1.6 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 25C 0.2 -55C 0.1 0 0 4 8 12 16 20 24 28 32 VGS = 0 ID = 0.25 mA 1.2 0.8 0.4 0 -50 -75 0 25 50 75 100 125 150 Figure 4. Normalized Breakdown Voltage versus Temperature TJ = 100C 0.3 125 TJ, JUNCTION TEMPERATURE (C) 0.5 0.4 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C) 2 Figure 3. Transfer Characteristics VGS = 15 V -25 Figure 2. Gate-Threshold Voltage Variation With Temperature VBR(DSS), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Figure 1. On-Region Characteristics 20 VDS = VGS ID = 1 mA 1.1 36 40 1.8 VGS = 10 V ID = 6 A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation With Temperature http://onsemi.com 3 150 MTP12P10 SAFE OPERATING AREA INFORMATION 50 1 ms 10 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 10 s 0.1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25C dc MTM/MTP12P06 RDS(on) LIMIT PACKAGE LIMIT THERMAL LIMIT MTM/MTP12P10 1 40 30 20 MTM/MTP12P06 10 0 10 1 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MTM/MTP12P10 0 Figure 7. Maximum Rated Forward Biased Safe Operating Area 10 30 50 70 20 40 60 80 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 90 100 Figure 8. Maximum Rated Switching Safe Operating Area FORWARD BIASED SAFE OPERATING AREA SWITCHING SAFE OPERATING AREA The FBSOA curves define the maximum drain-to-source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction temperature of 150C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. ON Semiconductor Application Note, AN569, "Transient Thermal Resistance-General Data and Its Use" provides detailed instructions. The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, V(BR)DSS. The switching SOA shown in Figure 8 is applicable for both turn-on and turn-off of the devices for switching times less than one microsecond. The power averaged over a complete switching cycle must be less than: TJ(max) - TC RJC r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 P(pk) 0.05 0.02 0.03 t1 0.02 0.01 0.01 SINGLE PULSE 0.02 t2 DUTY CYCLE, D = t1/t2 0.01 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 Figure 9. Thermal Response http://onsemi.com 4 20 RJC(t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 500 1000 MTP12P10 0 VGS, GATE SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 1600 TC = 25C VGS = 0 f = 1 MHz 1200 Ciss 800 Coss 400 Crss 0 0 10 30 20 VDS, SOURCE-TO-DRAIN VOLTAGE (VOLTS) -4 -6 -8 -10 VDS = 30 V -12 50 V -14 -16 40 TJ = 25C ID = 12 A -2 80 V 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Figure 10. Capacitance Variation Figure 11. Gate Charge versus Gate-To-Source Voltage RESISTIVE SWITCHING VDD ton td(on) RL tr 90% Vout PULSE GENERATOR Rgen 50 Vin OUTPUT, Vout DUT z = 50 toff td(off) tf 90% 10% 90% 50 INPUT, Vin 10% INVERTED Figure 12. Switching Test Circuit 50% 50% PULSE WIDTH Figure 13. Switching Waveforms http://onsemi.com 5 50 MTP12P10 PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA SEATING PLANE -T- B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MTP12P10 Notes http://onsemi.com 7 MTP12P10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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