PRELIMINARY PD-97291 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) TECHNOLOGY Product Summary Part Number IRHLYS77034CM Radiation Level 100K Rads (Si) RDS(on) 0.045 ID 20A* IRHLYS73034CM 300K Rads (Si) 0.045 20A* Low-Ohmic TO-257AA International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLYS797034CM Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 4.5V, TC = 25C ID @ VGS = 4.5V, TC =100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight Units 20* 20* 80 75 0.6 10 98 20 7.5 6.9 -55 to 150 A W W/C V mJ A mJ V/ns C 300 (0.063in/1.6mm from case for 10s) 4.3 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 03/01/11 PRELIMINARY IRHLYS77034CM, 2N7607T3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 60 -- -- V -- 0.07 -- V/C -- -- 0.045 1.0 -- 19 -- -- -- -5.0 -- -- -- 2.0 -- -- 1.0 10 V mV/C S nA VGS = 4.5V, ID = 20 A Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 100 -100 34 8.0 13 30 7.0 60 20 -- Ciss Coss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 2025 484 5.1 -- -- -- Rg Gate Resistance 1.16 VDS = VGS, ID = 250A nC VDS = 10V, IDS = 20A A VDS= 48V ,VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 20A VDS = 30V ns VDD = 30V, ID = 20A, VGS = 5.0V, RG = 7.5 A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA pF Measured from Drain lead ( 6mm / 0.025 in from package ) to Source lead ( 6mm/ 0.025 in from package ) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain nH Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 20* 80 1.2 200 705 Test Conditions A V ns nC Tj = 25C, IS = 20A, VGS = 0V A Tj = 25C, IF = 20A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max -- -- -- -- 1.67 80 Units C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com PRELIMINARY Radiation Characteristics Pre-Irradiation IRHLYS77034CM, 2N7607T3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 300K Rads (Si)1 Units Test Conditions Min Max 60 1.0 -- -- -- -- 2.0 100 -100 10 A VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS = 48V, VGS=0V Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (Low Ohmic TO-257) -- 0.045 VGS = 4.5V, ID = 20A -- 0.045 VGS = 4.5V, ID = 20A Diode Forward Voltage -- 1.2 V VGS = 0V, ID = 20A V nA 1. Part numbers IRHLYS77034, IRHLYS73034 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion Energy Range (MeV/(mg/cm )) LET (MeV) (m) 0V -1V -2V -3V -4V -5V -6V -7V Kr 37.3 400 48.6 60 60 60 60 60 60 60 35 Xe Au 63.3 90 435 1480 38.4 80.4 60 60 60 - 60 - 60 - 60 - - - - VDS 2 VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 70 60 50 40 30 20 10 0 Kr Xe Au 0 -1 -2 -3 -4 -5 -6 -7 VGS Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 PRELIMINARY IRHLYS77034CM, 2N7607T3 Pre-Irradiation 100 VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.25V 10 1 2.25V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.25V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 2.25V 60s PULSE WIDTH Tj = 150C 1 100 0.1 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 150C 10 T J = 25C 1 VDS = 25V 15 WIDTH 60s PULSE 0.1 ID = 20A 1.5 1.0 0.5 VGS = 4.5V 0.0 2 2.5 3 3.5 4 4.5 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com PRELIMINARY IRHLYS77034CM, 2N7607T3 100 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m) Pre-Irradiation ID = 20A 90 80 70 60 T J = 150C 50 40 30 20 T J = 25C 10 0 2 4 6 8 10 100 90 80 T J = 150C 70 60 50 T J = 25C 40 30 20 Vgs = 4.5V 10 12 0 10 20 VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage 40 50 60 70 80 Fig 6. Typical On-Resistance Vs Drain Current 90 2.5 ID = 1.0mA VGS(th) Gate threshold Voltage (V) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 30 ID, Drain Current (A) 80 70 2.0 1.5 1.0 0.5 ID = 50A ID = 250A ID = 1.0mA ID = 150mA 0.0 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) Fig 8. Typical Threshold Voltage Vs Temperature 5 PRELIMINARY IRHLYS77034CM, 2N7607T3 3600 12 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd 2800 ID = 20A VGS, Gate-to-Source Voltage (V) 3200 C, Capacitance (pF) Pre-Irradiation C oss = C ds + C gd 2400 Ciss 2000 Coss 1600 1200 800 Crss 400 0 1 10 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 17 0 100 0 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 35 100 LIMITED BY PACKAGE T J = 150C 30 10 ID, Drain Current (A) ISD, Reverse Drain Current (A) 5 10 15 20 25 30 35 40 45 50 55 60 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage T J = 25C 1 0.1 25 20 15 10 5 VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 11. Typical Source-Drain Diode Forward Voltage 6 VDS = 48V VDS = 30V VDS = 12V 1.6 25 50 75 100 125 150 T C , Case Temperature (C) Fig 12. Maximum Drain Current Vs. Case Temperature www.irf.com PRELIMINARY Pre-Irradiation IRHLYS77034CM, 2N7607T3 200 EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100s 10 1ms 1 0.1 10ms Tc = 25C Tj = 150C Single Pulse ID 8.9A 12.6A BOTTOM 20A 180 TOP 160 140 120 100 80 60 40 20 0 1 10 100 25 VDS , Drain-to-Source Voltage (V) 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJC ) 10 1 D = 0.50 P DM 0.20 SINGLE PULSE ( THERMAL RESPONSE ) 0.10 0.05 0.1 0.02 0.01 t1 t2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 PRELIMINARY IRHLYS77034CM, 2N7607T3 Pre-Irradiation V(BR)DSS tp 15V DRIVER L VDS D.U.T. RG + V - DD IAS VGS 20V A I AS 0.01 tp Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5V 50K .2F 12V QGS .3F QGD D.U.T. VG + V - DS VGS 3mA IG Charge Fig 17a. Basic Gate Charge Waveform VDS Fig 17b. Gate Charge Test Circuit RD VDS 90% VGS D.U.T. RG ID Current Sampling Resistors VDD + - VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit 8 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com PRELIMINARY Pre-Irradiation IRHLYS77034CM, 2N7607T3 Footnotes: A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L = 0.49 mH Peak IL = 20A, VGS = 10V A ISD 20A, di/dt 347A/s, VDD 60V, TJ 150C 10 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- Low Ohmic TO-257AA 0.13 [.005] A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 1 2 5.08 [.200] 4.83 [.190] 1.14 [.045] 0.89 [.035] B 10.92 [.430] 10.42 [.410] 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X O 0.88 [.035] 0.64 [.025] O 0.50 [.020] C A STANDARD PIN-OUT OPTIONAL PIN-OUT 3.05 [.120] B PIN ASSIGNMENTS NOT ES : 1. 2. 3. 4. CERAMIC EYELETS 1 = DRAIN DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2011 www.irf.com 9