NTE5645
TRIAC – 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, void–free glass passivated chips.
This device is a bi–directional triode thyristor and may be switched from off–state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM 600V. . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) 10A. . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM 100A. . . . . . . . .
Peak Gate–Trigger Current (3µs Max), IGTM 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM 40W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate–Power Dissipation, PG(AV) 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, TJ–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, RthJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current IDRM VDRM = 600V, Gate Open, TJ = +100°C – – 2 mA
Max. On–State Voltage VTM IT = 14A – – 2.2 V
DC Holding Current IHGate Open – – 50 mA
Critical Rate–of–Rise of Off–State
Voltage Critical
dv/dt VD = 600V, Gate Open, TC = +100°C – 5 – V/µs
DC Gate Trigger Current
T2 (+) Gate (+), T2 (–) Gate (–)
T2 (+) Gate (–), T2 (–) Gate (+)
IGT VD = 12V, RL = 30Ω–
––
–50
80 mA
mA