TOSHIBA MIG20J906E/EA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG2Z0J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS @ Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package. e Output (Inverter Stage) : 34 20A/600V IGBT e Input (Converter Stage) : 34 30A/800V Silicon Rectifier @ The Electrodes are Isolated from Case. e Outline MIG20J906E : 2-108E5A MIG20J906EA : 2-108E6A e Weight : 190g EQUIVALENT CIRCUIT P Pl 2) oO Kix k 30K x 50K 70K & 1 9 RO+ Bo 40 6 8 t t So oU oV ow To Lemp] KKK 20h 90 100 1lo Oo 0 13 Zo Z 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION oar others. @ The information contained herein is subject to change without notice. 1999-02-18 1/5 www.DataSheet.in TOSHIBA MIG20J906E/EA Package Dimension Unit : mm MIG20J906E 80+0.8 19.052 22.86+ 11.434 620.5 5 45.0+0.8 30.48 40.5 15.2440.5 15.040.8 42.0+0.8 5 11.43+40.5 11540.2%1,040.2 ate 3s rool 7 ot oL a7 as ar La ate rT T T T T T ; = a] at | # n ml a \ a a rs e T 105+0.5 2-108E5A Unit: mm MIG20J906EA 80t0.8 19.054 22.864 11. + 6240.5 5 45.0+0.8 30.48 40.5 15.2440.5 5.52 15.040.8 42.040.8 42.0405 11.43+40.5 1.1540.2%1.040.2 | : - Port i HHA at 105+0.5 git 17.00.8 13.040.8 | 2.0406 TN 16.5 40.8 1 2-108E6A 1999-02-18 2/5 www.DataSheet.in TOSHIBA MIG20J906E/EA MAXIMUM RATINGS (Ta = 25C) STAGE CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 Vv Gate-Emitter Voltage VGES +20 Vv D J 25 /2 A Collector Current c Cc 5/20 Inverter lms Icp 50/40 A F ac t DC IF 20 A orward Curren ims Ir 40 A Collector Power Dissipation P (Te = 25C) c 9 w Repetitive Peak Reverse Voltage VRRM 800 Vv Average Output Rectified Current Io 30 A Converter Peak One Cycle Surge Forward I 400 A Current (50 Hz, Non-Repetitive) FSM Collector-Emitter Voltage VCES 600 Vv Gate-Emitter Voltage VGES +20 Vv DC Iq 25 / 20 A IGBT Collector Current ims Icp 50/40 A Brake Collector Power Dissipation (Te = 25C) Fe 90 w Reverse Voltage VR 600 Vv FWD DC IF 20 A Forward Current ims ru 40 A Junction Temperature Tj 150 C Storage Temperature Range Tstg 40~125 C Module . 2500 Isolation Voltage Visol (AC 1 minute) Vv Screw Torque 6 N-m (25C / 40C) (25C / 40C) (25C / 40C) (25C / 40C) 1999-02-18 3/5 TOSHIBA MIG20J906E/EA ELECTRICAL CHARACTERISTICS (Ta = 25C) a. Inverter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current IgEs VGE = 20V, Voz =0 |+500] nA Collector Cut-Off Current Ickes VCE = 600 V, Var =0 1.0) mA Gate-Emitter Cut-Off Voltage VGE (off) |Ic = 2mA, Vck =5V 5.0 8.0} V Collector-Emitter Saturation Vv Ic = 20A Tj = 25C _ 2.3] 2.8 Vv Voltage CE (sat) |von =15V_ |T; = 125C {[f i . VCE = 10V, VGE = 0, Input Capacitance Cies f= 1MUHz pF Rise Time ty Vcc = 300 V 0.10} 0.20 Switching Turn-On Time | ton Ic = 204 | 0.25] 0.50 Ti : VoR = +15V pS Turn-Off Time | tof (Note 1)} 0.50 | 0.80 Forward Voltage VE Ip = 20A, Vag =0 2.0 2.8| V : Ip = 20A, Vor = 10V, Reverse Recovery Time try di/dt = 100 A/ ps 0.08} 0.15) us . Transistor 1.39 | , Thermal Resistance Rth (j-c) Diode = = 2.6 c/w b. Converter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Repetitive Peak Reverse _ Current IRRM | VRRM = 800 V 50 | vA Peak Forward Voltage VEM IFfM = 380A 1.05 | 1.20 Vv Peak One Cycle Surge Forward . Current IFSM 50 Hz sine-half-wave 400 A Thermal Resistance Rth (j-c) 1.56 |C/W 1999-02-18 4/5 TOSHIBA MIG20J906E/EA c. Brake stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current IGES VGE = 20V, Vcr =0 _ |+500|/ nA Collector Cut-Off Current IcES VCE = 600 V, VGE = 0 1.0} mA Reverse Current IR VR = 600 V 1.0) mA Gate-Emitter Cut-Off Voltage VGE (off) |Ic = 2mA, Vogk = 5V 5.0 8.0) V Collector-Emitter Saturation Vv Ic = 20A Tj = 25C 2.3| 2.8 Vv Voltage CE (sat) |Wqn =15V_ [T= 125C {[f . Vor = 10V, Vox =0, Input Capacitance Cies f=- 1M: 1850; pF Rise Time tr Vcc = 600 V 0.10] 0.20 Switching Turn-On Time | ton ne = aor y 0.25] 0.50 ; GE= + HS Turn-Off Time | tof (Note 1)| 0.50 | 0.80 Forward Voltage VE If = 20 A, Vag = 0 2.0 2.8| V . Transistor _ _ 1.39 |, Thermal Resistance Rth (j-c) Diode = = 26 Ciw d. Thermistor CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Zero-power Resistance Ros TI7mM = 0.2mA, Te = 25C 17.31 20 | 23.14] kO B Value Bo5/85 |Te = 25C/Te = 85C | 3760; K (Note 1) Switching Time Test Circuit & Timing Chart 1999-02-18 5/5