NEC :/ PNP SILICON POWER TRANSISTOR 2SA1395 DESCRIPTION The 2SA1395 is PNP silicon epitaxial transistor designed for FEATURES ABSOLUTE MAXIMUM RATINGS switching regulator, DC-DC converter and high frequency PACKAGE DIMENSIONS power amplifier application. in millimeters inches) (813 MAX) oiasy @ Easy mount by eliminating Insulation Sheet and Bushing. , 7402 Low Collector Saturation Voltage. (0.276)| | 126) _ @ High Switching Speed. 7 3 Complementary to 2SC3567. 3a 7 38 Be Re Maximum Temperatures Storage Temperature .... 2.220240. 55 to +150 C Junction Temperature ......... ... 150C Maximum " Maximum Power Dissipation (T, = 25 C) Total Power Dissipation ...........-2..4. 15 W 53 310. 05+ 0. Maximum Voltages and Currents (Ta = 25 C) j{0.051) (0.02 510.2 Vcpo Collector to Base Voltage... ...... 100 V toss) 2. VcEo Collector to Emitter Voltage. ..... 100 V ton) VegBo Emitter to Base Voltage. ..... ... 7.0 V D Base lcipc) Collector Current (DC)........-. -20 A 2 Collector 3 Emitter Icipulse) Collector Current (pulse)*........ -4.0 A 'giDc) Base Current (DC)..........5-.- -10 A * PW = 300 us, Duty Cycle < 10% ELECTRICAL CHARACTERISTICS (Tg = 25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT. TEST CONDITIONS t T Time , 0.5 on urron us Ig =-1.0 A, Igy = Ig2=-O.1A tstg Storage Time 1.5 us _ . RL = 502, Veco #50 V tf Fall Time 0.5 us hee DC Current Gain** 40 - Voce =-5.0V, Ic =-O.1A hreeg DC Current Gain** 40 200 - Vee =-5.0V,1=-1.0A VCE (sat) Collector Saturation Voitage* * 06 v Ic =-1.0A, lp =0.1A VBE (sat) Base Saturation Voltage* * -1.5 Vv Ic=-1.0A,lp=-0.1A VcEO (SUS) Volteas to Emitter Sustaining 100 Vv I=-1.0A, Ig =-0.1A,L=1mH Collector to Emitter Sustaining _ Io = -1.0 A, 1g1 = Ig2=0.1 A, VCEX {SUS)1 Voltage 100 Vv L = 180 uH, Clamped Collector to Emitter Sustaining _ Ic =2.0A, Ip, = 0.2 A, Ipa=0.1A, VCEX (SUSI2 . Voltage 100 v L = 180 wH, Clamped lcBo Collector Cutoff Current ~10 vA Vcg = 100 V, Ip =0 IcER Collector Cutoff Current 1.0 mA Vce = -100 V, Reg = $1 2, Ty = 125 C Icext Collector Cutoff Current -10 LA Vege = 100 V, Vee(orr) = 5.0 V =- VV =5.0V, IcEx2 Collector Cutoff Current -1.0 mA VCE 100 VBE(OFF) = 5 Tg = 125C lEBO Emitter Cutoff Current 10 uA Vep=5.0V, IC =90 Classification of hee ** PW < 350 us, Duty Cycle <2 % Rank M L K Range 40 to 80 60 to 120 | 100 to 200 Test Conditions: Veg = 5.0 V, IG =-1.0A 151 2SA1395 TYPICAL CHARACTERISTICS (T, = 25 C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 15 7 Ss 1 8 \ gt \ a p \ [o] o iN _ 5 a 3 IN be . L a 0 25 50 75 100 125 150 175 To Case TernperatureC TRANSIENT THERMAL RESISTANCE HVcE=10V [Ii] Singte Pulse 0.01 0.1 10 100 1000 PW-Pulse Widths Rth(je) Transient Thermal ResistanceC/W DC CURRENT GAIN vs. COLLECTOR CURRENT CE= = e hpe-DC Current Gain ~ -05 - - ICollector CurrentA 152 FORWARD BIAS SAFE OPERATING AREA Tg =25 C < Single Pulse pool ~ & = o L- 3 o 2 3 9-0. 2 -0.01 - = =1 =1 VcgeCallector to Emitter VoltageV REVERSE BIAS SAFE OPERATING AREA t < - { 5 z 5 2 6 5 . 9 = a Oo 6-1 2 t $ * 2 0 40 80 -120 Veg Collector to Emitter VoltageV BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT = Ic=10-lg 5, Pulsed I 9 { 0.02 -0.01 =0.02-005-01 -02 -05-10 - ICollector CurrentA Voe(sat) Collector Saturation VoltageV VBE(sat) Base Saturation VoltageV ton Turn on Time- ys tstg~ Storage Timeys tyFall Time ys NEC OPERATING CURVE OF SAFE OPERATING AREA _ So So is] o a oO Pp nN oO dT Percentage of Rated Current% oO 50 100 150 TeCase Temperature C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 =I -2. - 4 VcoeCollector to Emitter VoltageV TURN ON TIME, STORAGE AND FALL TIME vs. COLLECTOR CURRENT 1 Ig= 10-1g] = 10-Ig2 tstg ray S 9 o ICollector CurrentA NEC | 2SA1395 SWITCHING TIME (ton, tetg, te) TEST CIRCUIT B2 Pw SUE IB T.U.T = | Voc =~ 50 V Ic 10%| V IN le PW=50 us Vap=5 V 90 %|f | Duty Cycles 2% t ton tstg tf 153