2N2918 DUAL SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Power Dissipation (One Die, TC=25C) Power Dissipation (Both Dice, TC=25C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V ICEO VCE=5.0V IEBO VEB=5.0V BVCBO IC=10A 45 BVCEO IC=10mA 45 BVEBO IE=10A 6.0 VCE(SAT) IC=1.0mA, IB=0.1mA VBE(ON) VCE=5.0V, IC=100A hFE VCE=5.0V, IC=10A 150 hFE VCE=5.0V, IC=10A, TA=-55C 30 hFE VCE=5.0V, IC=100A 225 hFE VCE=5.0V, IC=1.0mA 300 fT VCE=5.0V, IC=500A, f=20MHz 60 Cob VCB=5.0V, IE=0, f=140kHz NF VCE=5.0V, IC=10A, RS=10k, f=1.0kHz, BW=200Hz hFE1/hFE2 VCE=5.0V, IC=100A 0.8 |VBE1-VBE2| VCE=5.0V, IC=10A |VBE1-VBE2| VCE=5.0V, IC=100A |VBE1-VBE2| VCE=5.0V, IC=1.0mA (VBE1-VBE2) VCE=5.0V, IC=100A, TA=-55C to +25C (VBE1-VBE2) VCE=5.0V, IC=100A, TA=+25C to +125C 45 45 6.0 30 300 500 750 1.5 -65 to +200 MAX 10 2.0 2.0 0.35 0.70 600 6.0 3.0 1.0 10 5.0 10 1.6 2.0 UNITS V V V mA mW mW mW W C UNITS nA nA nA V V V V V MHz pF dB mV mV mV mV mV R1 (4-March 2011) 2N2918 DUAL SILICON NPN TRANSISTOR TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-March 2011) w w w. c e n t r a l s e m i . c o m