(SEE REVERSE SIDE)
R2
BD136
BD138
BD140
PNP SILICON TRANSISTORS
JEDEC TO-126 CASE
DATA SHEE
T
DESCRIPTION: The Central Semiconductor BD136, BD138, and BD140 types are PNP Silicon Epitaxial
Planar Transistors designed for audio amplifier and switching applications.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL BD136 BD138 BD140 UNIT
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 1.5 A
Peak Collector Current ICM 2.0 A
Base Current IB 0.5 A
Peak Base Current IBM 1.0 A
Power Dissipation (Tmb≤70°C) PD 8.0 W
Power Dissipation (TA=25°C) PD 1.25 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ΘJ-mb 10 °C/W
Thermal Resistance ΘJA 100 °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
BD136 BD138 BD140
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNIT
ICBO V
CB=30V 100 100 100 nA
ICBO V
CB=30V, TC=125°C 10 10 10 µA
IEBO V
EB=5.0V 100 100 100 nA
BVCEO I
C=30mA 45 60 80 V
VCE(SAT) I
C=500mA, IB=50mA 0.5 0.5 0.5 V
VBE(ON) V
CE=2.0V, IC=500mA 1.0 1.0 1.0 V
hFE V
CE=2.0V, IC=5.0mA 40 40 40
hFE V
CE=2.0V, IC=150mA 63 250 63 250 63 250
hFE V
CE=2.0V, IC=500mA 25 25 25
fT V
CE=5.0V, IC=50mA, f=100MHz 160 TYP 160 TYP 160 TYP MHz
BD136-10 BD136-16
BD138-10 BD138-16
BD140-10 BD140-16
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE V
CE=2.0V, IC=150mA 63 160 100 250
BD136 / BD138 / BD140 PNP SILICON TRANSISTOR
JEDEC TO-126 CASE - MECHANICAL OUTLINE
D
G
H
L
K
F
E
J
A
B
C
BACKSIDE
R2
123
N
M
Lead Code:
1. Emitter
2. Collector
3. Base
Mounting Pad is Common to Pin 2
MINMAXMINMAX
A 0.094 0.106 2.40 2.70
B
C 0.015 0.030 0.38 0.75
D 0.291 0.307 7.40 7.80
E
F 0.118 0.126 3.00 3.20
G 0.413 0.435 10.50 11.05
H
J 0.025 0.035 0.64 0.90
K
L
M 0.045 0.055 1.14 1.39
N
TO-126 (REV:R2)
2.100.083
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
1.270.050
3.750.148
15.700.618
2.25
4.50
0.089
0.177
