TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications * High speed switching 5 0.475 1 4 B 0.05 M B 0.65 * Small gate charge: QSW = 7.5 nC (typ.) * Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) * High forward transfer admittance: |Yfs| = 5.4 S (typ.) * Low leakage current: IDSS = 10 A (max) (VDS = 100V) * Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA) 2.90.1 A 0.80.05 0.025 S S 0.28 +0.1 -0.11 0.170.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Absolute Maximum Ratings (Ta = 25C) Characteristic 1Source 5Drain 2Source 6Drain 0.28 +0.1 -0.11 Symbol Rating Unit 3Source 7Drain Drain-source voltage VDSS 100 V 4Gate 8Drain Drain-gate voltage (RGS = 20 k) VDGR 100 V JEDEC Gate-source voltage VGSS 20 V JEITA (Note 1) ID 2.2 IDP 8.8 A TOSHIBA Pulsed (Note 1) PD 1.68 W PD 0.84 W EAS 3.93 mJ IAR 2.2 A EAR 0.016 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) 2.80.1 Small footprint due to a small and thin package 0.05 M A 8 2.40.1 * Unit: mm 0.330.05 Weight: 0.017 g (typ.) Circuit Configuration Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 2-3V1K 8 7 6 5 1 2 3 4 8 7 6 5 8003H 1 2 3 4 Lot No. 1 2007-06-22 TPCP8003-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 C/W Rth (ch-a) 148.8 C/W Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 1 mH, RG = 1 , IAR = 2.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-06-22 TPCP8003-H Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cutoff current IDSS VDS = 100 V, VGS = 0 V 10 A Drain-source breakdown voltage Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 V (BR) DSX ID = 10 mA, VGS = -20 V 60 VDS = 10 V, ID = 1 mA 1.1 2.3 VGS = 4.5 V, ID = 1.1 A 140 190 VGS = 10 V, ID = 1.1 A 130 180 VDS = 10 V, ID = 1.1 A 2.7 5.4 360 22 75 7 14 Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain ("Miller") charge Qgd 3 VDD - 50 V < Duty = 1%, tw = 10 s 17 VDD - 80 V, VGS = 10 V, ID = 2.2 A 7.5 VDD - 80 V, VGS = 5 V, ID = 2.2 A 4.5 1.6 1.3 Gate switch charge QSW 2.0 VDD - 80 V, VGS = 10 V, ID = 2.2 A V m S pF ns tf Turn-off time 0V 4.7 Switching time ID = 1.1 A VOUT 10 V RL = 45.5 Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 8.8 A -1.2 V VDSF IDR = 2.2 A, VGS = 0 V 3 2007-06-22 TPCP8003-H ID - VDS 4 3.5 6 6 4.5 4.5 10 3.25 ID 3 6 Common source Ta = 25C Pulse test 3.75 8 3.75 5 Drain current Drain current 3.5 5 3.25 8 (A) 3 8 ID (A) Common source Ta = 25C Pulse test ID - VDS 10 2 2.75 1 4 3 2 2.75 VGS = 2.5 V 0 0 0.2 0.4 0.8 0.6 Drain-source voltage VDS VGS = 2.5 V 0 1 0 1 (V) 2 Drain-source voltage ID - VGS (V) (V) Common source Ta = 25C Pulse test 0.8 VDS Drain-source voltage Drain current ID (A) 6 4 100 Ta = -55C 2 25 0 1 3 2 Gate-source voltage 4 VGS 0.6 0.4 ID = 2.2 A 0.2 0.5 0 5 1.1 0 2 (V) 4 25 10 Ta = -55C 100 1 0.1 0.1 1 Drain current 10 VGS 12 (V) Common source Ta = 25C Pulse test VGS = 4.5 V 100 10 0.1 10 ID 8 RDS (ON) - ID 1000 Common source VDS = 10 V Pulse test Drain-source ON-resistance RDS (ON) (m) |Yfs| 100 6 Gate-source voltage Yfs - ID (S) VDS VDS - VGS Common source VDS = -10 V Pulse test Forward transfer admittance 5 4 1 8 0 3 (A) 10 1 Drain current 4 10 ID (A) 2007-06-22 TPCP8003-H RDS (ON) - Ta IDR - VDS 10 IDR 250 ID = 2.2A 1.1A 200 ID = 2.2A 1.1A 150 VGS = 4.5 V 100 10 V 50 -80 -40 Common source Ta = 25C Pulse test (A) Common source Pulse test Drain reverse current 0 40 Ambient temperature 80 120 Ta 10 1 0.1 160 3 5 0 0.2 (C) 1 0 0.4 0.6 Vth (V) Gate threshold voltage Coss 10 Crss Common source VGS = 0 V f = 1 MHz Ta = 25C 10 1.5 1 Common source VDS = 10 V ID = 1 mA Pulse test 0.5 0 -80 100 VDS 2 -40 0 (V) (V) (1) Drain-source voltage 1.2 (2) 0.8 0.4 40 80 Ambient temperature 120 Ta 160 (C) 140 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) 5s 1.6 80 Dynamic input/output characteristics VDS (W) 2 40 Ambient temperature 120 Ta 80 40 20 12 40 8 VDD = 80 V VDS 6 40 4 VGS 20 2 1 2 3 4 5 Total gate charge (C) 5 10 20 VDD = 80 V 60 0 0 160 14 Common source I = 2.2 A 120 D Ta = 25C Pulse test 100 6 7 Qg (nC) 8 9 (V) 1 2.5 PD - Ta PD (V) VGS (pF) Capacitance C 100 Drain-source voltage Drain power dissipation VDS 3 Ciss 0 1.2 1.0 Vth - Ta Capacitance - VDS 0 0.8 Drain-source voltage 1000 1 0.1 VGS = -1V Gate-source voltage Drain-source ON-resistance RDS (ON) (m) 300 0 2007-06-22 TPCP8003-H rth - tw Transient thermal impedance rth (C/W) 1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 10 1 Single - pulse 0.1 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 10 ID max (Pulse) * t = 1 ms* Drain current ID (A) 100 t = 10 ms* 1 0.1 * Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 Drain-source voltage VDSS max 100 VDS 1000 (V) 6 2007-06-22 TPCP8003-H RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-06-22